公开(公告)号：US20220013338A1

公开(公告)日：2022-01-13

申请号：US17367948

申请日：2021-07-06

Applicant: Tokyo Electron Limited

Inventor： Toshifumi ISHIDA ,  Yusuke SAITOH

IPC: H01J37/32

Abstract: An edge ring includes a ramp surface of which a height decreases from an outer edge-side portion toward an inner edge-side portion. The edge ring is configured to satisfy the relation of T2/T1>T4/T3. Where, T1 is a thickness of the edge ring, before plasma treatment, at a first position on the ramp surface of the inner edge-side portion, and T2 is a thickness of the edge ring, before plasma treatment, at a second position on the ramp surface of the outer edge-side portion. T3 is a thickness of the edge ring, after plasma treatment, at the first position, and T4 is a thickness of the edge ring, after plasma treatment, at the second position.

公开(公告)号：US20130168369A1

公开(公告)日：2013-07-04

申请号：US13667226

申请日：2012-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshifumi ISHIDA ,  Daisuke HAYASHI

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32009 ,  H01J37/32724

Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

Abstract translation: 本发明是一种冷却块，其形成用于产生用于等离子体处理的等离子体的电极，并且包括用于冷却液体的通道，所述冷却块包括：分别由铝制成的第一基材和第二基材， 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层，所述层通过在第一和第二基底材料之间插入锌而形成，并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。

公开(公告)号：US20210335584A1

公开(公告)日：2021-10-28

申请号：US17274294

申请日：2019-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masakatsu KASHIWAZAKI ,  Toshifumi ISHIDA ,  Ryo SASAKI ,  Takehiro KATO

IPC: H01J37/32 ,  H01L21/683 ,  F28F3/12

Abstract: A stage includes: a substrate mounting member having a mounting surface on which a target substrate is mounted; a support member configured to support the substrate mounting member; a refrigerant flow path formed inside the support member along the mounting surface, and including a ceiling surface disposed on the mounting surface side, a bottom surface opposite to the ceiling surface, and an introduction port for introducing a refrigerant formed on the bottom surface; and a heat insulating member including at least a first planar portion covering a portion of the ceiling surface, which faces the introduction port, and a second planar portion covering an inner side surface of a curved portion of the refrigerant flow path.

公开(公告)号：US20220367154A1

公开(公告)日：2022-11-17

申请号：US17815525

申请日：2022-07-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masakatsu KASHIWAZAKI ,  Toshifumi ISHIDA ,  Hirofumi OHTA

IPC: H01J37/32

Abstract: A plasma processing apparatus according to one aspect includes a chamber body providing a chamber, the chamber body including a side wall, an opening being formed on the side wall, a stage provided in the chamber, a ceiling facing the stage, a gas supply system configured to supply a processing gas to the chamber, a power supply configured to supply electric power, and a wall that forms a processing space having a volume smaller than a volume of the chamber in the chamber. At least a part of the wall is movable between a position overlapping with a transport path extending between the processing space and the opening and a position not overlapping with the transport path, and the wall forms the processing space when the at least a part of the wall is disposed at the position overlapping with the transport path.

公开(公告)号：US20210233749A1

公开(公告)日：2021-07-29

申请号：US17155927

申请日：2021-01-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshifumi ISHIDA

IPC: H01J37/32

Abstract: An apparatus for a plasma processing includes an annular member, a support unit, a chamber and a pressure control unit. The annular member has a groove or a protrusion circumferentially formed on a bottom surface thereof, the groove or the protrusion having a first thread circumferentially formed on a side surface. The support unit has a protrusion or a groove circumferentially formed on a placing surface on which the annular member is placed such that the groove or the protrusion of the annular member is fitted with the protrusion or the groove of the support unit, the protrusion or the groove of the support unit having a second thread circumferentially formed on a side surface thereof. The chamber has therein the support unit. Further, the pressure control unit controls a pressure in the chamber such that a driving force for circumferentially rotating the annular member is obtained.

公开(公告)号：US20180374687A1

公开(公告)日：2018-12-27

申请号：US16009742

申请日：2018-06-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masakatsu KASHIWAZAKI ,  Toshifumi ISHIDA ,  Hirofumi OHTA

IPC: H01J37/32

Abstract: A plasma processing apparatus according to one aspect includes a chamber body providing a chamber, the chamber body including a side wall, an opening being formed on the side wall, a stage provided in the chamber, a ceiling facing the stage, a gas supply system configured to supply a processing gas to the chamber, a power supply configured to supply electric power, and a wall that forms a processing space having a volume smaller than a volume of the chamber in the chamber. At least a part of the wall is movable between a position overlapping with a transport path extending between the processing space and the opening and a position not overlapping with the transport path, and the wall forms the processing space when the at least a part of the wall is disposed at the position overlapping with the transport path.