公开(公告)号：US20190108986A1

公开(公告)日：2019-04-11

申请号：US16156384

申请日：2018-10-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SAITOH ,  Tokuhisa OIWA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.

公开(公告)号：US20160064245A1

公开(公告)日：2016-03-03

申请号：US14826569

申请日：2015-08-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SAITOH ,  Yu NAGATOMO ,  Hayato HISHINUMA ,  Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yuki KANEKO

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/31144

Abstract: Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

Abstract translation: 公开了一种用于蚀刻包括交替提供氧化硅膜和氮化硅膜形成的多层膜的第一区域的方法和具有单个氧化硅膜的第二区域。 蚀刻方法包括：提供处理对象物体，其包括设置在等离子体处理装置的处理容器内的第一区域和第二区域上的掩模; 在处理容器内产生包含氢氟烃气体的第一处理气体的等离子体，所述等离子体容纳所述处理目标物体; 以及在处理容器内产生包含碳氟化合物气体的第二处理气体的等离子体，其容纳处理对象物体。 交替地重复产生第一处理气体的等离子体的步骤和产生第二处理气体的等离子体的步骤。

公开(公告)号：US20230013805A1

公开(公告)日：2023-01-19

申请号：US17954169

申请日：2022-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SAITOH ,  Tokuhisa OIWA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.

公开(公告)号：US20220013338A1

公开(公告)日：2022-01-13

申请号：US17367948

申请日：2021-07-06

Applicant: Tokyo Electron Limited

Inventor： Toshifumi ISHIDA ,  Yusuke SAITOH

IPC: H01J37/32

Abstract: An edge ring includes a ramp surface of which a height decreases from an outer edge-side portion toward an inner edge-side portion. The edge ring is configured to satisfy the relation of T2/T1>T4/T3. Where, T1 is a thickness of the edge ring, before plasma treatment, at a first position on the ramp surface of the inner edge-side portion, and T2 is a thickness of the edge ring, before plasma treatment, at a second position on the ramp surface of the outer edge-side portion. T3 is a thickness of the edge ring, after plasma treatment, at the first position, and T4 is a thickness of the edge ring, after plasma treatment, at the second position.

公开(公告)号：US20160336191A1

公开(公告)日：2016-11-17

申请号：US15150937

申请日：2016-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SAITOH ,  Hironobu ICHIKAWA ,  Isao TAFUSA

IPC: H01L21/311 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582

Abstract: The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing apparatus, and a second step of generating a plasma of a second processing gas containing a hydrofluorocarbon gas and a nitrogen gas in the processing container. In the method, sequences each including the first step and the second step are performed. The plasma is continuously generated over the execution period for the first step and the execution period for the second step. In the second step, a ratio of the flow rate of a hydrogen gas to the flow rate of the second processing gas is set to be small in a period immediately before the execution period for the first step and a period immediately after the execution period for the first step.

Abstract translation: 一个实施例的蚀刻方法包括在等离子体处理装置的处理容器中产生含有碳氟化合物气体和氢氟烃气体的第一处理气体的等离子体的第一步骤，以及产生第二处理气体的等离子体的第二步骤 在处理容器中含有氢氟烃气体和氮气。 在该方法中，执行包括第一步骤和第二步骤的序列。 在第一步骤的执行周期和第二步骤的执行周期中连续生成等离子体。 在第二步骤中，将氢气的流量与第二处理气体的流量的比例设定为在第一步骤的执行期间之前的时间段和执行期间之后的时间段内 第一步。

公开(公告)号：US20230298867A1

公开(公告)日：2023-09-21

申请号：US18122469

申请日：2023-03-16

Applicant: Tokyo Electron Limited

Inventor： Keita YAEGASHI ,  Joji TAKAYOSHI ,  Takayuki SUZUKI ,  Ryohei TAKEDA ,  Soya TODO ,  Yusuke SAITOH ,  Takaharu SAINO

IPC: H01J37/32 ,  G05B19/4099

CPC classification number: H01J37/32669 ,  G05B19/4099 ,  H01J2237/24564 ,  H01J2237/3343 ,  G05B2219/45031

Abstract: A prediction method includes a calculation process and a prediction process. The calculation process calculates a correlation between a spatial distribution value of a magnetic field in a chamber when a plasma etching process is performed on a substrate disposed in the chamber, and a process result of the plasma etching process on the substrate. The prediction process predicts the process result of the plasma etching process on the substrate from the spatial distribution value of the magnetic field in the chamber based on the calculated correlation.

公开(公告)号：US20190318918A1

公开(公告)日：2019-10-17

申请号：US16381424

申请日：2019-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SAITOH ,  Tokuhisa OIWA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a mounting table on which a target object as a plasma processing target is mounted, a focus ring disposed to surround the target object, and an acquisition unit configured to acquire state information indicating a measured state of the target object. The plasma processing apparatus further includes a plasma control unit configured to control plasma processing based on the state of the target object indicated by the state information acquired by the acquisition unit such that a difference between a height of an interface of a plasma sheath above the target object and a height of an interface of a plasma sheath above the focus ring is within a predetermined range.

公开(公告)号：US20190067030A1

公开(公告)日：2019-02-28

申请号：US16106545

申请日：2018-08-21

Applicant: Tokyo Electron Limited

Inventor： Yusuke SAITOH

IPC: H01L21/311 ,  H01L27/11529 ,  H01L27/11573 ,  H01L21/768 ,  H01L27/12 ,  H01L21/67

Abstract: A method of etching silicon-containing film formed on an electrode layer of a floating potential is provided. The etching is performed in a processing vessel while supplying gas, a first high frequency electric power of a first frequency, and a second high frequency electric power of a second frequency less than the first frequency. The method includes a step of supplying, during etching of the silicon-containing film, the first high frequency electric power as a continuous wave and the second high frequency electric power as a pulse wave having a duty cycle of 20% or less, upon a distance from the electrode layer to a bottom of an etching pattern formed on the silicon-containing film becoming not more than a predetermined distance.