公开(公告)号：US20210063247A1

公开(公告)日：2021-03-04

申请号：US17007009

申请日：2020-08-31

Applicant: Tokyo Electron Limited ,  Furuya Metal Co.,Ltd.

Inventor： Hisashi INOUE ,  Masahiro KOBAYASHI ,  Yasuaki KIKUCHI ,  Tatsuya YAMAGUCHI ,  Koji YOSHII ,  Kensuke MORITA ,  Jun ITABASHI

IPC: G01K7/02 ,  G01K1/08 ,  H01L27/16

Abstract: A thermocouple structure according to one aspect of the present disclosure includes a first element wire, second element wires formed of a material different from the first element wire, an insulating covering member covering at least one of the first element wire and the second element wires, and a protective tube accommodating the first element wire and the second element wire. Each of the second element wires is bonded to a different position on the first element wire.

公开(公告)号：US20230422348A1

公开(公告)日：2023-12-28

申请号：US18210338

申请日：2023-06-15

Applicant: Tokyo Electron Limited

Inventor： Yasuaki KIKUCHI ,  Tatsuya YAMAGUCHI ,  SungDuk SON ,  Miki OUCHI ,  Nobuyuki HIROTA ,  Shingo HISHIYA

IPC: H05B1/02

CPC classification number: H05B1/023

Abstract: A substrate processing apparatus includes a processing container in which a plurality of substrates are processed; a plurality of heaters configured to control a temperature of the plurality of substrates accommodated in the processing container for each of a plurality of zones; and a controller configured to control an operation of the plurality of heaters. The controller is configured to control the plurality of heaters to a set temperature set in advance for each of the plurality of zones, thereby performing a processing on the plurality of substrates accommodated in the processing container, determine whether an abnormality determination condition is satisfied, including that an output value of at least one heater of the plurality of heaters is equal to or less than a heater control resolution, and issue a warning for the set temperature for each of the plurality of zones based on a result of the determining.

公开(公告)号：US20230009720A1

公开(公告)日：2023-01-12

申请号：US17857914

申请日：2022-07-05

Applicant: Tokyo Electron Limited

Inventor： Yasuaki KIKUCHI ,  Tsubasa YOKOI ,  Tatsuya YAMAGUCHI ,  Keisuke SUZUKI

IPC: C23C16/06 ,  H01L21/285 ,  C23C16/52

Abstract: A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.