公开(公告)号：US20240112927A1

公开(公告)日：2024-04-04

申请号：US18376050

申请日：2023-10-03

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Wataru TOGASHI ,  Kota OIKAWA

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01L21/3065

Abstract: In one embodiment, an etching method includes (a) preparing a substrate having a first region including a first material that contains silicon, and a second region including a second material different from the first material, and (b) etching the first region by plasma generated from a processing gas containing a carbon- and fluorine-containing gas, a nitrogen-containing gas, and a metal halide gas. In (b), a flow rate of the metal halide gas is lower than a flow rate of the carbon- and fluorine-containing gas and a flow rate of the nitrogen-containing gas.