公开(公告)号：US20240162045A9

公开(公告)日：2024-05-16

申请号：US17842791

申请日：2022-06-17

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Shota YOSHIMURA ,  Shinya MORIKITA

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02126 ,  H01J37/32091

Abstract: An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.

公开(公告)号：US20230005753A1

公开(公告)日：2023-01-05

申请号：US17856251

申请日：2022-07-01

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Shota YOSHIMURA ,  Shinya MORIKITA ,  Kota OIKAWA

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method includes: (a) providing a substrate including a first region containing silicon and nitrogen and a second region containing silicon and oxygen; (b) forming a tungsten-containing deposit on the first region using a first plasma generated from a first processing gas containing fluorine, tungsten, and at least one selected from a group consisting of carbon and hydrogen; and (c) after (b), etching the second region using a second plasma generated from a second processing gas different from the first processing gas.

公开(公告)号：US20240112927A1

公开(公告)日：2024-04-04

申请号：US18376050

申请日：2023-10-03

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Wataru TOGASHI ,  Kota OIKAWA

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01L21/3065

Abstract: In one embodiment, an etching method includes (a) preparing a substrate having a first region including a first material that contains silicon, and a second region including a second material different from the first material, and (b) etching the first region by plasma generated from a processing gas containing a carbon- and fluorine-containing gas, a nitrogen-containing gas, and a metal halide gas. In (b), a flow rate of the metal halide gas is lower than a flow rate of the carbon- and fluorine-containing gas and a flow rate of the nitrogen-containing gas.

公开(公告)号：US20220406613A1

公开(公告)日：2022-12-22

申请号：US17842791

申请日：2022-06-17

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Shota YOSHIMURA ,  Shinya MORIKITA

IPC: H01L21/311 ,  H01L21/02

Abstract: An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.

公开(公告)号：US20200266036A1

公开(公告)日：2020-08-20

申请号：US16790028

申请日：2020-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke AOKI ,  Fumiya TAKATA ,  Toshikatsu TOBANA ,  Shinya MORIKITA ,  Kazunobu FUJIWARA ,  Jun ABE ,  Koichi NAGAMI

IPC: H01J37/32 ,  B08B5/00

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

公开(公告)号：US20200234925A1

公开(公告)日：2020-07-23

申请号：US16743788

申请日：2020-01-15

Applicant: Tokyo Electron Limited

Inventor： Yusuke AOKI ,  Shinya MORIKITA ,  Toshikatsu TOBANA ,  Fumiya TAKATA

IPC: H01J37/32

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

公开(公告)号：US20230086580A1

公开(公告)日：2023-03-23

申请号：US17955540

申请日：2022-09-29

Applicant: Tokyo Electron Limited

Inventor： Fumiya TAKATA ,  Shota YOSHIMURA ,  Shinya MORIKITA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: An etching method includes preparing a substrate including a first region containing a first material and a second region containing a second material different from the first material; and etching the second region with a plasma generated from a processing gas containing a tungsten-containing gas. In the etching, a flow rate of the tungsten-containing gas is the largest among all gases contained in the processing gas except for an inert gas.

公开(公告)号：US20210305057A1

公开(公告)日：2021-09-30

申请号：US17190651

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Kota ISHIHARADA ,  Fumiya TAKATA ,  Toshikatsu TOBANA ,  Shinya MORIKITA

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.