公开(公告)号：US12211692B2

公开(公告)日：2025-01-28

申请号：US17190818

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Noriaki Okabe ,  Takuya Seino ,  Ryota Kozuka ,  Yasuhiro Hamada ,  Yuutaro Kishi

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/311

Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

公开(公告)号：US10460950B2

公开(公告)日：2019-10-29

申请号：US15310840

申请日：2015-06-03

Applicant: Tokyo Electron Limited

Inventor： Akinobu Kakimoto ,  Yoshinobu Hayakawa ,  Satoshi Mizunaga ,  Yasuhiro Hamada ,  Mitsuhiro Okada

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/32 ,  H01L21/311

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon. The film forming apparatus is provided separately from the etching apparatus, the etching apparatus performing, a first etching step in which the film including silicon is partway etched by using plasma; and a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma, the film forming apparatus performing a film forming step in which the film including carbon is formed, without generating plasma, on the film including silicon on which the first etching step has been performed.