公开(公告)号：US11189469B2

公开(公告)日：2021-11-30

申请号：US16367776

申请日：2019-03-28

Applicant: Tokyo Electron Limited

Inventor： Yuki Azuma

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: An etching method for etching an organic film on a substrate inside a processing container includes controlling a temperature of the substrate to be at most −35° C., and supplying a gas containing O into an inside of the processing container.

公开(公告)号：US20210140044A1

公开(公告)日：2021-05-13

申请号：US16977162

申请日：2019-07-23

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Nagaike ,  Daisuke Yoshikoshi ,  Takao Funakubo ,  Takahisa Iwasaki ,  Chiju Hsieh ,  Yuki Azuma

IPC: C23C16/455 ,  C23C16/505 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52 ,  C23C16/40

Abstract: A film forming method of forming a predetermined film on a substrate by PEALD includes: adsorbing a precursor on the substrate; and forming plasma from a modifying gas and modifying the precursor adsorbed on the substrate with radicals contained in the plasma. Here, the modifying of the precursor includes supplying a radio frequency power having an effective power smaller than 500 W to a plasma source configured to form the plasma from the modifying gas.