公开(公告)号：US12255082B2

公开(公告)日：2025-03-18

申请号：US17863427

申请日：2022-07-13

Applicant: Tokyo Electron Limited

Inventor： Yuta Hamashima ,  Jun Nonaka

IPC: H01L21/67

Abstract: A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

公开(公告)号：US12198948B2

公开(公告)日：2025-01-14

申请号：US17859007

申请日：2022-07-07

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Yuta Hamashima

IPC: H01L21/67 ,  C23C16/44

Abstract: A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.