公开(公告)号：US12255082B2

公开(公告)日：2025-03-18

申请号：US17863427

申请日：2022-07-13

Applicant: Tokyo Electron Limited

Inventor： Yuta Hamashima ,  Jun Nonaka

IPC: H01L21/67

Abstract: A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

公开(公告)号：US12198948B2

公开(公告)日：2025-01-14

申请号：US17859007

申请日：2022-07-07

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Yuta Hamashima

IPC: H01L21/67 ,  C23C16/44

Abstract: A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.

公开(公告)号：US11257692B2

公开(公告)日：2022-02-22

申请号：US16816530

申请日：2020-03-12

Applicant: Tokyo Electron Limited

Inventor： Kouji Ogura ,  Jun Nonaka ,  Takao Inada ,  Yoshinori Nishiwaki ,  Hiroshi Yoshida

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

公开(公告)号：US20200289994A1

公开(公告)日：2020-09-17

申请号：US16816379

申请日：2020-03-12

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Takao Inada ,  Kouji Ogura

IPC: B01F3/08 ,  B01F11/02 ,  B01F13/02 ,  B01F15/06

Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.

公开(公告)号：US20160064257A1

公开(公告)日：2016-03-03

申请号：US14828579

申请日：2015-08-18

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Itaru Kanno

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/67051 ,  H01L21/6708

Abstract: Disclosed is a substrate liquid processing method. The method includes producing a processing liquid including deionized water, carbon dioxide, and ammonia, which has a PH of a predetermined value in a range of pH 5 to 9; and processing a substrate having a metal exposed, using the processing liquid.

Abstract translation: 公开了一种基板液体处理方法。 该方法包括生产pH为5〜9的PH值为预定值的去离子水，二氧化碳和氨的处理液; 以及使用所述处理液处理暴露了金属的基板。

公开(公告)号：US10748790B2

公开(公告)日：2020-08-18

申请号：US15907394

申请日：2018-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Suzuki ,  Takashi Yabuta ,  Jun Nonaka

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/306 ,  H01L21/02

Abstract: A substrate processing apparatus includes a holding device that holds a substrate horizontally, a rotation device that rotates the holding device such that the substrate held by the holding device is rotated, a supply device that includes a nozzle and supplies etching liquid from the nozzle to the substrate held by the holding device, a movement device that moves the nozzle with respect to the substrate held by the holding device, and a control device including circuitry that executes a scan process in which the circuitry controls the rotation, movement and supply devices such that while the liquid is supplied from the nozzle to the substrate, the nozzle is moved back and forth over the substrate between first and second positions on outer peripheral side of the substrate relative to the first position. The circuit of the control device executes the scan process multiple times while changing the first position.

公开(公告)号：US20170301534A1

公开(公告)日：2017-10-19

申请号：US15518013

申请日：2015-10-20

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Nakamori ,  Teruomi Minami ,  Kotaro Ooishi ,  Jun Nonaka

IPC: H01L21/02 ,  B08B3/10 ,  B08B3/04 ,  B08B3/08 ,  H01L21/687 ,  H01L21/67

Abstract: This liquid treatment method for substrates involves performing: a liquid treatment step for liquid-treating a substrate with a treatment liquid; a rinse treatment step for rinsing the liquid-treated substrate with a rinsing liquid; a water-repellency treatment step for subjecting the rinsed substrate to a water-repellency treatment using a water-repellency-imparting solution; next, a substitution treatment step for subjecting the substrate subjected to the water-repellency treatment to a substitution treatment acceleration liquid; a cleaning treatment step for cleaning the substrate subjected to the water-repellency treatment by using a cleaning solution; and thereafter, a drying treatment step for substituting the cleaning solution with a drying solution having a higher volatility than that of the cleaning solution, and removing the drying solution from the substrate. Thus, it is possible to prevent pattern collapse during the drying treatment, and to decrease particles caused by watermarks.

公开(公告)号：US20150273538A1

公开(公告)日：2015-10-01

申请号：US14666896

申请日：2015-03-24

Applicant: Tokyo Electron Limited

Inventor： Daisuke Saiki ,  Shogo Mizota ,  Takashi Yabuta ,  Jun Nonaka ,  Tatsuya Nagamatsu ,  Koji Tanaka ,  Tomiyasu Maezono

IPC: B08B3/14

CPC classification number: B08B3/14 ,  B01D36/04 ,  B01D37/04 ,  B24B57/02 ,  C11D11/0047 ,  H01L21/67017

Abstract: Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

Abstract translation: 公开了一种用于使用处理液在基板上进行液体处理的基板液体处理装置和方法，以及记录有基板液体处理程序的计算机可读记录介质。 在该方法中，进行第一药液供给工序，将第一药液从第一药液供给部供给至处理液储存部，进行第一化学液净化工序，对化学液中的第一药液进行净化 净化单元，执行第二化学液体供给步骤，将第二化学液体从第二药液供给单元供给到处理液储存单元，并且进行处理液供给工序，供给通过混合第一和第 第二化学液体从处理液体供应单元到基板液体处理单元。

公开(公告)号：US20150147888A1

公开(公告)日：2015-05-28

申请号：US14548453

申请日：2014-11-20

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Shogo Mizota ,  Tatsuya Nagamatsu ,  Daisuke Saiki ,  Kazuhiro Teraoka ,  Takashi Yabuta

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708

Abstract: A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.

Abstract translation: 本公开的液体处理装置保持并旋转衬底保持单元中的衬底，在将主喷嘴单元的主喷嘴移动到蚀刻液到达衬底的中心的第一位置和第二位置之间时，喷射蚀刻液体 位于比第一位置更靠近基板周边的位置，然后以比喷射流速比第一位置更靠近基板周边的第三位置从喷嘴喷射蚀刻液体到基板 高于主喷嘴。

公开(公告)号：US20140377463A1

公开(公告)日：2014-12-25

申请号：US14297768

申请日：2014-06-06

Applicant: Tokyo Electron Limited

Inventor： Yosuke Hachiya ,  Hisashi Kawano ,  Mitsunori Nakamori ,  Jun Nonaka ,  Shogo Mizota ,  Tatsuya Nagamatsu ,  Daisuke Saiki ,  Kazuhiro Teraoka ,  Takashi Yabuta

IPC: B05D3/10 ,  B05C11/08 ,  B05C5/00 ,  B05D5/00 ,  B05B3/00 ,  B05B12/04 ,  B05D1/00 ,  B05D1/02 ,  B05C5/02

CPC classification number: B05D3/107 ,  B05B3/001 ,  B05B12/04 ,  B05D1/005 ,  B05D5/08 ,  H01L21/67051 ,  H01L21/68792

Abstract: Disclosed is a liquid processing method which may de-electrify the surface of a hydrophobized substrate. A substrate electrified according to a liquid processing is de-electrified by supplying a hydrophobizing liquid to a surface of the substrate subjected to the liquid processing while rotating the substrate, and performing rinsing by supplying an alkaline rinsing liquid to the hydrophobized surface of the substrate.

Abstract translation: 公开了一种可以使疏水化基材的表面去电的液体处理方法。 通过在旋转基板的同时向经过液体处理的基板的表面供给疏水化液体，将通过液体处理带电的基板脱气，并且通过向基板的疏水化表面供给碱性冲洗液体进行冲洗。