公开(公告)号：US08896210B2

公开(公告)日：2014-11-25

申请号：US13705712

申请日：2012-12-05

Applicant: Tokyo Electron Limited ,  Tocalo Co., Ltd.

Inventor： Masaru Nishino ,  Masatsugu Makabe ,  Nobuyuki Nagayama ,  Tatsuya Handa ,  Ryotaro Midorikawa ,  Keigo Kobayashi ,  Tetsuya Niya

IPC: H01J7/24 ,  H05H1/46 ,  H01J37/32

CPC classification number: H05H1/46 ,  H01J37/32477 ,  H01J37/32495

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Abstract translation: 等离子体处理装置包括处理室; 用作安装台的下电极，用于安装目标物体; 以及设置成与下电极相对的上电极或天线电极。 该装置还包括用于将包含含卤素气体和氧气的气体引入处理室的气体供给源和用于将高频电力施加到上部电极中的至少一个的高频电源， 天线电极或下电极。 在暴露于等离子体的处理室的内表面中，目标物体的安装位置与上部电极或天线电极之间的至少一部分或全部表面; 或上部电极或天线电极的至少一部分或全部表面涂覆有氟化合物。

公开(公告)号：US08758551B2

公开(公告)日：2014-06-24

申请号：US13922892

申请日：2013-06-20

Applicant: Tokyo Electron Limited

Inventor： Tatsuya Handa

IPC: H01L21/306 ,  C23F1/00

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01L21/67069

Abstract: A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals.

Abstract translation: 一种能够防止在基板上产生异常放电的基板处理装置。 容纳室容纳衬底。 布置在容纳室中的安装台被配置为使得基板能够安装在其上。 盘状电极结构与高频电源连接，经由至少一个气体供给系统与气体供给装置连接。 电极结构中具有至少一个缓冲室和连接到气体供应系统的多个连接部分。 缓冲室经由多个气孔与容纳室的内部连通，经由多个连接部与气体供给系统连通。 用于缓冲室的多个连接部分以等间隔布置在以电极结构的中心为中心的圆周上。