摘要:
Provided is a solid-state imaging device including a plurality of vertical transfer units (VCCDs), a horizontal transfer unit (HCCD) and a driving unit. In a vertical final stage of the VCCDs, there are same transfer electrode structures in every m columns, where m is equal to or more than 2, the vertical final stage being a vertical transfer stage located the closest to the HCCD, in each vertical final stage of columns except one column among the m columns or of all columns among the m columns, there are transfer electrodes independent from electrodes in the other columns in the m columns, and the independent transfer electrodes are driven independently to perform transfer processing from the corresponding vertical final stage to the HCCD, the driving being independent from driving for the electrodes in the other columns in the m columns, and the driving unit performs sequential vertical transfer driving, by which first packets and second packets are sequentially and vertically transferred within one horizontal transfer period, the first packet including a signal component to be used as an image signal and the second packet not including any signal component to be used as an image signal, and to apply, in the sequential vertical transfer driving, respective transfer pulses to the transfer electrodes in the vertical transfer stage and transfer electrodes of the HCCD, so that the first packets and the second packets are separated to be allocated into respective different horizontal transfer stages of the HCCD.
摘要:
An objective of the present invention is to provide the solid-state imaging device and the driving method thereof which can control: a poor picture quality, such as blooming, to maximize a dynamic range of the photodiode; and a poor picture quality resulted from an incomplete read-out operation. A solid-state imaging device in the present invention includes: a solid-state imaging element; and a driving pulse controlling unit applying a driving pulse to each of read-out gates of a column CCD. The driving pulse controlling unit transfers in a column direction signal charge within a charge transfer region of the column CCD by applying a column transfer clock having a LOW level voltage and a MIDDLE level voltage, and the LOW level voltage and the MIDDLE level voltage are minus voltages.
摘要:
To provide a solid-state imaging device which suppresses light emission caused by hot electrons, and reduces the difference in the impact of heat emission between fields. In the solid-state imaging device in the present invention, the final-stage source-follower circuit within the output circuit includes a drive transistor and a load transistor connected to the drive transistor, and, by applying, to the load transistor, a control signal having different levels for a first period including a charge sweep-out period and an exposure period of the light-receiving elements in a signal outputting period, and a second period which is a period excluding the charge sweep-out period from the signal outputting period, the source-to-drain voltage of the final-stage drive transistor in the first period is made lower than the source-to-drain voltage in the second period.
摘要:
A driving method used for a solid-state imaging device according to the present invention includes: imaging an object for a first storage time when a shutter is open, in a first state that is a state where either at least a part of the peripheral circuitry is suspended or a consumption current of the peripheral circuitry is limited; imaging, in the first state, a dark output signal image including only a dark output for a second storage time when the shutter is closed; converting the dark output signal image to correspond to the image obtained for the first storage time and subtracting, from the signal image of the object, the converted dark output signal image or converting the dark output signal image to correspond to the image obtained for the second storage time and subtracting, from the signal image of the object, the converted dark output signal image.