摘要:
Provided is a solid-state imaging device including a plurality of vertical transfer units (VCCDs), a horizontal transfer unit (HCCD) and a driving unit. In a vertical final stage of the VCCDs, there are same transfer electrode structures in every m columns, where m is equal to or more than 2, the vertical final stage being a vertical transfer stage located the closest to the HCCD, in each vertical final stage of columns except one column among the m columns or of all columns among the m columns, there are transfer electrodes independent from electrodes in the other columns in the m columns, and the independent transfer electrodes are driven independently to perform transfer processing from the corresponding vertical final stage to the HCCD, the driving being independent from driving for the electrodes in the other columns in the m columns, and the driving unit performs sequential vertical transfer driving, by which first packets and second packets are sequentially and vertically transferred within one horizontal transfer period, the first packet including a signal component to be used as an image signal and the second packet not including any signal component to be used as an image signal, and to apply, in the sequential vertical transfer driving, respective transfer pulses to the transfer electrodes in the vertical transfer stage and transfer electrodes of the HCCD, so that the first packets and the second packets are separated to be allocated into respective different horizontal transfer stages of the HCCD.
摘要:
An objective of the present invention is to provide the solid-state imaging device and the driving method thereof which can control: a poor picture quality, such as blooming, to maximize a dynamic range of the photodiode; and a poor picture quality resulted from an incomplete read-out operation. A solid-state imaging device in the present invention includes: a solid-state imaging element; and a driving pulse controlling unit applying a driving pulse to each of read-out gates of a column CCD. The driving pulse controlling unit transfers in a column direction signal charge within a charge transfer region of the column CCD by applying a column transfer clock having a LOW level voltage and a MIDDLE level voltage, and the LOW level voltage and the MIDDLE level voltage are minus voltages.
摘要:
A solid-state imaging device includes: a plurality of light-receiving elements which are arranged by rows and columns; a plurality of vertical transfer units each of which is arranged for a corresponding column of the light-receiving elements, and vertically transfers a plurality of signal packets and dummy packets, the signal packet including charges read from the light-receiving elements, the dummy packets being packets other than the signal packets, and N columns of the vertical transfer units forming one column group; a plurality of hold units which are arranged for final stages of the vertical transfer units in N columns except M column in the column group, and each of which mixes, holds, and vertically transfers charges of the signal packets and the dummy packet without depending on vertical transfer from upstream of the corresponding vertical transfer unit; a horizontal transfer unit which mixes, holds, and horizontally transfers the charges transferred from the hold units or the vertical transfer units in the M column in the column group; and a driving unit which drives the vertical transfer units, the hold units, and the horizontal transfer unit, wherein the driving unit perform the driving, so that a signal packet and a plurality of dummy packets in an identical column are mixed together into a mixed packet in each of the holding units, charges of the mixed packet are held in the hold unit, the held charges of the mixed packet are vertically transferred to the horizontal transfer unit so that the mixed packet is mixed with a mixed packet of a different hold unit which is vertically transferred from the different hold unit to the horizontal transfer unit.
摘要:
A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.
摘要:
First macro photography is performed with each of the imaging systems being focused on a main subject to obtain first images, second photography is performed with one of the plurality of imaging systems being focused on a position farther away than the main subject to obtain a second image, processing is performed on each of the first images to transparentize an area other than the main subject, and each of the transparentized first images and an area other than the main subject of the second image are combined to generate a combined image corresponding to each of the imaging systems.
摘要:
A fixing member is used for fixing a case to a printed circuit board. The fixing member is mounted at a mount-receiving portion, which is formed at the case, by being inserted along a side wall of the mount-receiving portion. At the fixing member, a plate spring portion is formed at a predetermined position. The plate spring portion projects to a side of abutting against the side wall. In the state in which the fixing member is mounted at the mount-receiving portion, the plate spring portion is pressed by the side wall and flexes. Consequently, the fixing member is subject to a pressure force in a direction away from the side wall. In addition, the fixing member is supported from a rear face side by support portions which structure the mount-receiving portion. Thus, the fixing member is gripped in a direction intersecting the side wall.
摘要:
A semiconductor device in which an E-FET and a D-FET are integrated on the same substrate, wherein an epitaxial layer includes, in the following order from the semiconductor substrate: a first threshold adjustment layer that adjusts a threshold voltage of a gate of the E-FET and a threshold voltage of a gate of the D-FET; a first etching-stopper layer that stops etching performed from an uppermost layer to a layer abutting on the first etching-stopper layer; a second threshold adjustment layer that adjusts the threshold voltage of the gate of the D-FET; and a second etching-stopper layer that stops the etching performed from the uppermost layer to a layer abutting on the second etching-stopper layer, and at least one of the first etching-stopper layer and the second threshold adjustment layer includes an n-type doped region.
摘要:
Vertical transfer portions for transferring signal charges from photoelectric conversion portions in a vertical direction and a horizontal transfer portion for transferring them in a horizontal direction are provided, and each of a plurality of vertical transfer stages constituting the vertical transfer portion is provided with a plurality of phases of transfer electrodes. The transfer electrodes at a vertical last stage include independent transfer electrodes (V3R, V5R) for at least two phases, that are independent of the other vertical transfer stages, have identical configurations repeated in a unit of n columns, and are in common among corresponding columns in a plurality of the units of n columns and independent of the independent transfer electrodes belonging to the other columns in the unit of n columns. A signal transfer stage from which the signal charge is read out and a dummy transfer stage from which the signal charge is not read out are formed alternately, the signal charge at the signal transfer stage and a dummy signal at the following dummy transfer stage are mixed together at the vertical last stage and then transferred to the horizontal transfer portion. In the case where a dummy transfer stage is formed for transfer, it is possible to suppress transfer degradation and mix a dummy signal with a signal charge.
摘要:
To provide a solid-state imaging apparatus which is capable of preventing electric charge from being injected from a semiconductor substrate while electric charge is being accumulated into photodiodes. The solid-state imaging apparatus includes a solid-state imaging device and a driving pulse control unit. The solid-state imaging device includes: a semiconductor substrate, photodiodes which are two-dimensionally formed on the semiconductor substrate, and vertical Charge-coupled devices (CCDs) having at least one arranged read-out gate and non-read-out gate for each of the photodiodes, the read-out gate being for reading out accumulated electric charge from the associated photodiode, and the non-read-out gate being not for reading out accumulated electric charge from the associated photodiode. The driving pulse control unit applies driving pulses sequentially to the respective read-out gates in order to change the read-out gates from stand-by LOW-voltage states to MIDDLE-voltage states, and apply a driving pulse for maintaining a LOW-voltage state of at least one of non-read-out gates adjacent to a last read-out gate in the order of the change among the non-read-out gates, during the change starting with a first read-out gate and ending with the last read-out gate.
摘要:
A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers and the second light-shield layers are conductive. The first light-shield layers are provided in a layer different from a layer in which the second light-shield layers are provided. At least one of the first light-shield layers serves as an interconnect electrically connected to the vertical transfer electrodes included in the same row, and at least one of the first light-shield layers on the distribution transfer unit serves as an interconnect electrically connected the distribution transfer electrodes. The first light-shield layers are disposed so as not to overlap with the horizontal transfer unit.