公开(公告)号：US09244135B2

公开(公告)日：2016-01-26

申请号：US14009441

申请日：2012-05-11

申请人： Tomokazu Ogomi ,  Hiroyuki Asano ,  Toshiaki Shoji ,  Takeshi Musha ,  Jin Inoue ,  Masaaki Okada ,  Miki Kagano ,  Kazuya Makabe ,  Kenji Shimohata ,  Takeshi Kishimoto

发明人： Tomokazu Ogomi ,  Hiroyuki Asano ,  Toshiaki Shoji ,  Takeshi Musha ,  Jin Inoue ,  Masaaki Okada ,  Miki Kagano ,  Kazuya Makabe ,  Kenji Shimohata ,  Takeshi Kishimoto

IPC分类号： G01R33/09 ,  G01D5/14 ,  G07D7/04 ,  G01N27/72

CPC分类号： G01R33/09 ,  G01D5/147 ,  G01N27/72 ,  G01R33/096 ,  G07D7/04

摘要： A magnetic sensor device includes a first magnet and a second magnet that are disposed on mutually opposing sides of a conveyance path, and one of poles of the first magnet faces an opposite pole of the second magnet. The first magnet and the second magnet generate a cross magnetic field whose strength in a spacing direction, which is orthogonal to a conveying direction, is within a predetermined range. An AMR element is located in a magnetic field in which the strength of the cross magnetic field in the spacing direction is within a predetermined range, and detects, as change in a resistance value, change in the cross magnetic field caused by an object to be detected. A multilayer board outputs the change in the resistance value detected by the AMR element to a processing circuit.

摘要翻译： 磁传感器装置包括：第一磁体和第二磁体，其布置在输送路径的相对的相对侧上，并且第一磁体中的一个磁极面对第二磁体的相反极。 第一磁体和第二磁体产生与传送方向正交的间隔方向的强度在预定范围内的交叉磁场。 AMR元件位于磁场中，其中间隔方向上的交叉磁场的强度在预定范围内，并且作为电阻值的变化，检测由对象引起的交叉磁场的变化， 检测到。 多层板将由AMR元件检测的电阻值的变化输出到处理电路。

公开(公告)号：US20140028308A1

公开(公告)日：2014-01-30

申请号：US14009441

申请日：2012-05-11

申请人： Tomokazu Ogomi ,  Hiroyuki Asano ,  Toshiaki Shoji ,  Takeshi Musha ,  Jin Inoue ,  Masaaki Okada ,  Miki Kagano ,  Kazuya Makabe ,  Kenji Shimohata ,  Takeshi Kishimoto

发明人： Tomokazu Ogomi ,  Hiroyuki Asano ,  Toshiaki Shoji ,  Takeshi Musha ,  Jin Inoue ,  Masaaki Okada ,  Miki Kagano ,  Kazuya Makabe ,  Kenji Shimohata ,  Takeshi Kishimoto

IPC分类号： G01R33/09

CPC分类号： G01R33/09 ,  G01D5/147 ,  G01N27/72 ,  G01R33/096 ,  G07D7/04

摘要： A magnetic sensor device includes a first magnet and a second magnet that are disposed on mutually opposing sides of a conveyance path, and one of poles of the first magnet faces an opposite pole of the second magnet. The first magnet and the second magnet generate a cross magnetic field whose strength in a spacing direction, which is orthogonal to a conveying direction, is within a predetermined range. An AMR element is located in a magnetic field in which the strength of the cross magnetic field in the spacing direction is within a predetermined range, and detects, as change in a resistance value, change in the cross magnetic field caused by an object to be detected. A multilayer board outputs the change in the resistance value detected by the AMR element to a processing circuit.

摘要翻译： 磁传感器装置包括：第一磁体和第二磁体，其布置在输送路径的相对的相对侧上，并且第一磁体中的一个磁极面对第二磁体的相反极。 第一磁体和第二磁体产生与传送方向正交的间隔方向的强度在预定范围内的交叉磁场。 AMR元件位于磁场中，其中间隔方向上的交叉磁场的强度在预定范围内，并且作为电阻值的变化，检测由对象引起的交叉磁场的变化， 检测到。 多层板将由AMR元件检测的电阻值的变化输出到处理电路。

公开(公告)号：US09407217B2

公开(公告)日：2016-08-02

申请号：US14119573

申请日：2012-06-12

申请人： Miki Kagano ,  Kazuya Makabe ,  Tomokazu Ogomi ,  Takahito Nakanishi ,  Tadashi Minobe ,  Takashi Ito

发明人： Miki Kagano ,  Kazuya Makabe ,  Tomokazu Ogomi ,  Takahito Nakanishi ,  Tadashi Minobe ,  Takashi Ito

IPC分类号： G01B7/14 ,  H03F3/45 ,  G01D5/14 ,  G01R33/09

CPC分类号： H03F3/45 ,  G01D5/145 ,  G01R33/09 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/411 ,  H03F2200/78 ,  H03F2203/45512 ,  H03F2203/45514 ,  H03F2203/45521 ,  H03F2203/45528 ,  H03F2203/45534 ,  H03F2203/45536 ,  H03F2203/45594 ,  H03F2203/45728

摘要： When a switch is set to off, and a switch is set to on, the voltage of a SigOut terminal is stabilized with a reference voltage, and a bias voltage is applied to a capacitor. Changing the switch from on to off, with the bias voltage retained in the capacitor, a detection signal which is input via a SigIn terminal is amplified with the reference voltage as a reference, and an amplified signal is output from the SigOut terminal.

摘要翻译： 当开关设置为关闭并且开关设置为开时，SigOut端子的电压通过参考电压稳定，并且偏置电压被施加到电容器。 将开关从开关切换到关闭状态，将电压保持在电容器中，通过SigIn端子输入的检测信号以参考电压为基准放大，放大信号从SigOut端子输出。

公开(公告)号：US20140197828A1

公开(公告)日：2014-07-17

申请号：US14119573

申请日：2012-06-12

申请人： Miki Kagano ,  Kazuya Makabe ,  Tomokazu Ogomi ,  Takahito Nakanishi ,  Tadashi Minobe ,  Takashi Ito

发明人： Miki Kagano ,  Kazuya Makabe ,  Tomokazu Ogomi ,  Takahito Nakanishi ,  Tadashi Minobe ,  Takashi Ito

IPC分类号： H03F3/45 ,  G01R33/09

CPC分类号： H03F3/45 ,  G01D5/145 ,  G01R33/09 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/411 ,  H03F2200/78 ,  H03F2203/45512 ,  H03F2203/45514 ,  H03F2203/45521 ,  H03F2203/45528 ,  H03F2203/45534 ,  H03F2203/45536 ,  H03F2203/45594 ,  H03F2203/45728

摘要： When a switch is set to off, and a switch is set to on, the voltage of a SigOut terminal is stabilized with a reference voltage, and a bias voltage is applied to a capacitor. Changing the switch from on to off, with the bias voltage retained in the capacitor, a detection signal which is input via a SigIn terminal is amplified with the reference voltage as a reference, and an amplified signal is output from the SigOut terminal.

摘要翻译： 当开关设置为关闭并且开关设置为开时，SigOut端子的电压由参考电压稳定，并且偏置电压被施加到电容器。 将开关从开关切换到关闭状态，将电压保持在电容器中，通过SigIn端子输入的检测信号以参考电压为基准放大，放大信号从SigOut端子输出。