Optoelectronic semiconductor chip comprising a reflective layer
    1.
    发明授权
    Optoelectronic semiconductor chip comprising a reflective layer 有权
    包括反射层的光电半导体芯片

    公开(公告)号:US08710512B2

    公开(公告)日:2014-04-29

    申请号:US12922577

    申请日:2009-04-24

    IPC分类号: H01L33/42

    摘要: An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

    摘要翻译: 包括第一接触位置(1)和第二接触位置(2)的光电子半导体芯片以及直接导电地连接到第二接触位置的反射层(3)。 反射层含有倾向于迁移的金属,并且反射层以这样的方式布置,使得金属的迁移路径(4)可以形成在第二和第一接触位置之间。 在半导体芯片的半导体芯片工作期间形成抵消金属迁移的电场的装置(6)。

    Optoelectronic Semiconductor Chip Comprising a Reflective Layer
    2.
    发明申请
    Optoelectronic Semiconductor Chip Comprising a Reflective Layer 有权
    包含反射层的光电半导体芯片

    公开(公告)号:US20110079810A1

    公开(公告)日:2011-04-07

    申请号:US12922577

    申请日:2009-04-24

    IPC分类号: H01L33/60

    摘要: An optoelectronic semiconductor chip is specified, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

    摘要翻译: 指定了包括第一接触位置(1)和第二接触位置(2)的光电半导体芯片,以及直接导电地连接到第二接触位置的反射层(3)。 反射层含有倾向于迁移的金属,并且反射层以这样的方式布置,使得金属的迁移路径(4)可以形成在第二和第一接触位置之间。 在半导体芯片的半导体芯片工作期间形成抵消金属迁移的电场的装置(6)。