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    Method and structure for DC and RF shielding of integrated circuits
    1.
    发明授权
    Method and structure for DC and RF shielding of integrated circuits 有权
    集成电路直流和射频屏蔽的方法和结构

    公开(公告)号：US06844236B2

    公开(公告)日：2005-01-18

    申请号：US09911364

    申请日：2001-07-23

    申请人： Tony G. Ivanov ,  Michael S. Carroll ,  Ranbir Singh

    发明人： Tony G. Ivanov ,  Michael S. Carroll ,  Ranbir Singh

    IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/762 ,  H01L21/822 ,  H01L23/528 ,  H01L23/552 ,  H01L23/66 ,  H01L27/04 ,  H01L27/12

    CPC分类号： H01L21/76251 ,  H01L23/5283 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for electromagnetically shielding circuits which combine to form an integrated circuit device provides isolated silicon islands surrounded laterally and subjacently by conductive material. The isolated silicon islands may be covered individually or as a group by a conductive cover. The integrated circuit may include at least one silicon island including an analog circuit and at least one silicon island including a digital circuit, the analog and digital circuits electromagnetically shielded from one another. The method for forming the structure includes providing a first semiconductor substrate and hydrophilically bonding a substructure to the first semiconductor substrate. The substructure includes the isolated silicon islands surrounded by the conductive material. The substructure may be formed on a second semiconductor substrate by implanting an impurity region into an upper portion of the second semiconductor substrate. After bonding, the substructure may be separated from the remainder of the second substrate by propagating a crack along the boundary of the impurity region which separates the substructure from the remainder of the second semiconductor substrate. The method further includes forming the conductive cover over the isolated silicon island or islands by forming insulating layers over the silicon islands then forming a conductive cover layer and conductive sidewalls to surround the silicon island or islands being enclosed.

    摘要翻译： 组合形成集成电路器件的电磁屏蔽电路的方法提供了隔离的硅岛，其横向地和由传导材料邻接地包围。 孤立的硅岛可以单独地覆盖或通过导电覆盖物覆盖。 集成电路可以包括至少一个包括模拟电路的硅岛和包括数字电路的至少一个硅岛，模拟和数字电路彼此电磁屏蔽。 形成该结构的方法包括提供第一半导体衬底并将子结构亲水地结合到第一半导体衬底。 该子结构包括由导电材料包围的隔离的硅岛。 可以通过将杂质区注入到第二半导体衬底的上部中而在第二半导体衬底上形成子结构。 在结合之后，通过沿着将子结构与第二半导体衬底的其余部分分离的杂质区域的边界传播裂纹，子结构可以与第二衬底的其余部分分离。 该方法还包括通过在硅岛上方形成绝缘层，形成导电覆盖层和导电侧壁以围绕被隔离的硅岛或岛状物，在隔离的硅岛或岛上形成导电盖。