摘要:
An address pattern generator for testing a semiconductor device, particularly, a synchronous DRAM is disclosed. The address pattern generator can switch an interleave mode and a sequential mode of address generation for a semiconductor device under test during a test process in real time and generates column addresses for the device under test by a Y address generation section alone. The address generator includes an address selector that selects and outputs from a lower Y address signal, Z address signal, and an operation mode control signal is arranged, a conversion memory that outputs certain conversion table contents is arranged, a multiplexer that selects and outputs an output from the conversion memory and the lower Y address signal in accordance with the burst length control signal. In another aspect, the address pattern generator includes a counter that loads the lower address signal from the Y address generator section for the sequential mode and loads a fixed value for the interleave mode, an exclusive OR gate that provides an output signal of the counter to an input terminal and the lower address signal from the Y address generation section to the other input terminal, and a multiplexer that selects the output signal of the counter for the sequential mode and the output signal of the exclusive OR gate for the interleave mode.
摘要:
An address pattern generator for testing a semiconductor device, particularly, a synchronous DRAM (SDRAM) is disclosed. The address pattern generator can switch an interleave mode and a sequential mode of address generation for a SDRAM during a test process in real time and generates column addresses for the SDRAM by a Y address generation section alone. The address generator includes an address selector that selects and outputs from a lower Y address signal, a Z address signal, and an operation mode control signal, a conversion memory that outputs data based on a conversion table, a multiplexer that selects and outputs an output from the conversion memory and the lower Y address signal in accordance with a burst length control signal. In another aspect, the address pattern generator includes a counter that loads the lower address signal from the Y address generator section for the sequential mode while a fixed value for the interleave mode, an exclusive OR gate that receives an output signal of the counter to an input terminal and the lower address signal from the Y address generation section to the other input terminal, and a multiplexer that selects the output signal of the counter for the sequential mode and the output signal of the exclusive OR gate for the interleave mode.
摘要:
The test apparatus includes: a pattern memory that stores therein data to be outputted to the device under test; a device judgment section that judges whether the device under test passes or fails based on an output signal; the number of data information storage section that stores therein the number of data information based on the number of logic H data included in an input data; a counter that receives output data outputted from the pattern memory to the device under test and counts the number of logic H data included in the output data; a pattern memory judgment section that judges that the data stored in the pattern memory is correct when the number of data information on the input data is corresponding to the number of logic H data counted by the counter and outputs a signal according to this judgment result.
摘要:
A high speed pattern generating method by which a pattern signal having a speed higher than conventional speed can be generated using a sequence control part operating at a speed equivalent to a conventional speed and a high speed pattern generator for materializing the method are provided. A high speed pattern signal having a speed multiple of the number of multiplexing against an operation speed of the sequence control part is generated by generating multi-phase sub patterns from a plurality of sub pattern generating parts and by taking out for multiplexing the multi-phase sub patterns one phase by one phase by a multiplexing circuit. Further, an instruction memory of a pattern generator is uniquely arranged to materialize the high speed pattern generating method.
摘要:
A test apparatus includes a fail memory (AFM) for storing therein fail information in association with each of the addresses of a memory under test and a mark memory (CMM) for storing therein, in association with each of the addresses of the memory under test, validity information indicating whether the fail information stored in the AFM is valid. When the validity information read from the CMM in association with an address under test indicates that the fail information that has been stored in the AFM is invalid, the test apparatus overwrites the fail information stored in the AFM with the fail information that is newly generated by a current test. On the other hand, when the validity information read from the CMM indicates that the fail information is valid, the test apparatus updates the fail information stored in the AFM with the new fail information and writes the updated fail information back into the AFM. When overwriting the fail information that has been stored in the AFM with the new fail information, the test apparatus writes into the CMM the validity information that indicates that the new fail information is valid. Initialization of the AFM is performed in such a manner that, before and after the initialization, different validity information indicates validity of the fail information.
摘要:
A failure analysis memory (7) having main and sub failure analysis memories (7a, 7b) has two counters (C1, C2), a multiplexer (MUX), two registers (RG1, RG2)and a comparator 14. A value corresponding to the size of a column address of a memory under test (2) is set in the register (RG1) and a stop address is set in the register (RG2). Each time a SAM part (2b) of the memory under test sequentially outputs data in an address area specified by a transfer row address and a start address, one of the counters is incremented on a one-by-one basis from a start address set therein, and its count value is selected by the multiplexer (MUX) and output as a sub address signal (SA'). During this time, the other counter in the non-counting state loads therein a main address specifying data that a RAM part 2a transfers next. When the memory under test operates in a simple read/transfer mode or a split read/transfer mode, a column address in the output from the multiplexer (MUX) is compared by the comparator (14) with the value set in the register (RG1). When the memory under test operates in a stop control split read/transfer mode the column address is compared with the value set in the register (RG2). When coincidence is detected by the comparator (14), a controller (12) switches the counting and non-counting states of the counters (C1, C2).
摘要:
In a memory testing device for testing a memory capable of effecting a write and a read in pixel, plane and block modes, there are provided a pattern generator for generating an address and data for supply to the memory under test and a buffer memory which has memory chips equal in number to the square of the number of bits of the data. The same data as that to be written in the memory under test is written in the buffer memory in the same mode as in the memory under test, and the data is read out in the same mode as in the memory under test. The data thus read out of the buffer memory is used as expected value data for logical comparison with data read out of the memory under test.
摘要:
A test apparatus including a first buffer section and a second buffer section that each buffers fail data and address data; an address fail memory section that writes the fail data buffered in the first buffer section to an address of an internal memory indicated by the address data corresponding to the fail data, using an RMW process; and a control section that, in a state in which the fail data and address data output from the testing section are supplied to the first buffer section, when unused capacity of the first buffer section becomes less than or equal to a predetermined first threshold value, supplies the fail data and address data output from the testing section to the second buffer section instead of to the first buffer section.
摘要:
A test apparatus that tests a memory under test, comprising an address fail memory that stores address fail data for each address; a block fail memory that stores block fail data for each block; a reading section that reads the address fail data from the address fail memory for each block; a row fail counter that, for each row address in a group including a plurality of the blocks in the memory under test, counts the fail cells indicated by the address fail data; and a column fail counter that counts the fails cells for each column address.
摘要:
A test pattern generator for performing a block write function testing at high speed. The test pattern generator includes a data register which takes in data signal from a data generator by a first write signal from a control signal generator, an address selector which takes in specific bits from an address generated by an address generator, a mask data register file which takes the data signal in an area specified by a second write signal from the control signal generator, a write data register file which takes the data signal in an area specified by a third write signal from the control signal generator, and data formatter which outputs either an output data of the data register or of the data generator based on the above signals.