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    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE
    8.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE 有权
    光电转换装置及其制造光电转换装置的方法

    公开(公告)号：US20120077300A1

    公开(公告)日：2012-03-29

    申请号：US13242965

    申请日：2011-09-23

    申请人： Sakae Hashimoto

    发明人： Sakae Hashimoto

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L31/02327

    摘要： A manufacturing method forms a photoelectric conversion device having a photoreceiving portion provided in a substrate and an interlayer film arranged over the substrate. The method includes forming a layer of a lower etching rate rather than the interlayer film so that the layer of the lower etching rate covers a whole surface of the photoreceiving portion, forming the interlayer film over the layer of the lower etching rate, etching a portion of the interlayer film corresponding to the photoreceiving portion to form a hole penetrating through the interlayer film and reaching the layer of the lower etching rate, and disposing in the hole a material of a higher refractive index rather than the interlayer film.

    摘要翻译： 制造方法形成具有设置在基板中的光接收部分和布置在基板上的中间膜的光电转换装置。 该方法包括形成较低蚀刻速率的层而不是层间膜，使得较低蚀刻速率的层覆盖光接收部分的整个表面，在较低蚀刻速率的层上形成中间膜，蚀刻部分 对应于光接收部分的中间膜，以形成穿透中间膜的孔并达到较低蚀刻速率的层，并且在孔中设置较高折射率的材料而不是中间膜。

    PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    光电转换装置及其制造方法

    公开(公告)号：US20100207014A1

    公开(公告)日：2010-08-19

    申请号：US12767885

    申请日：2010-04-27

    申请人： Sakae Hashimoto

    发明人： Sakae Hashimoto

    IPC分类号： H01L31/09 ,  H01L31/0216 ,  H01L31/0232

    CPC分类号： H01L27/14636 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

    摘要： A photoelectric conversion device comprises a semiconductor substrate and a multilayer wiring structure, wherein the multilayer wiring structure includes a first wiring layer which serves as a top wiring layer in an effective region and contains aluminum as a principal component, a first insulation film arranged in the effective region and an light-shielded region so as to cover the first wiring layer, and a second wiring layer which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and contains aluminum as a principal component, and wherein the first insulation film has, in the effective region, a first portion which is positioned above the photoelectric conversion unit, and the first portion functions as at least a part of an interlayer lens.

    摘要翻译： 一种光电转换装置，包括半导体衬底和多层布线结构，其中所述多层布线结构包括在有效区域中用作顶部布线层并且以铝为主要成分的第一布线层，布置在所述第一布线层中的第一绝缘膜 有效区域和遮光区域以覆盖第一布线层;以及第二布线层，其用作布置在遮光区域中的第一绝缘膜上并以铝为主要成分的顶部布线层，以及 其中所述第一绝缘膜在有效区域中具有位于所述光电转换单元之上的第一部分，并且所述第一部分用作层间透镜的至少一部分。

    Photoelectric conversion device and method for producing photoelectric conversion device
    10.
    发明授权
    Photoelectric conversion device and method for producing photoelectric conversion device 失效
    光电转换装置及光电转换装置的制造方法

    公开(公告)号：US07592645B2

    公开(公告)日：2009-09-22

    申请号：US11275028

    申请日：2005-12-02

    申请人： Sakae Hashimoto

    发明人： Sakae Hashimoto

    IPC分类号： H01L31/0328

    CPC分类号： H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L31/02327

    摘要： A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refractive index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refractive index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refractive index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.

    摘要翻译： 根据本发明的光电转换装置具有设置在基板中的多个光接收部分，覆盖光接收部分的层间膜，设置成与光接收部分相对应并具有较高折射率的大折射率区域 以及设置在光接收部和大折射率区之间的层，并且具有比中间膜更低的蚀刻速率的层，其中形成较低蚀刻速率的层以至少覆盖 光接收部分的整个表面。 此外，较低蚀刻速率的层具有在大折射率区域和基板的折射率之间的折射率。 这种结构可以提供抑制图像元素的灵敏度降低和灵敏度变化的光电转换装置。