公开(公告)号：US20110175150A1

公开(公告)日：2011-07-21

申请号：US13052216

申请日：2011-03-21

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

摘要翻译： 本发明使用包括多个像素的图像拾取装置，所述多个像素分别包括用于将入射光转换成信号电荷的光电转换单元，用于放大由光电转换单元产生的信号电荷的放大单元和用于传送信号的转移单元 由光电转换单元向放大单元充电，其中光电转换单元由第一导电型第一半导体区和第二导电型第二半导体区和第二导电型第三半导体区形成 形成在第一像素的光电转换单元与与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上，第一导电型第四半导体区域的杂质浓度高于 第一半导体区域形成在光电转换单元之间 光电转换单元和第三半导体层之间包括第三半导体区域和形成在比第四半导体区域更深的位置并且具有高于第一半导体区域的杂质浓度的第一导电型第五半导体区域 地区。

公开(公告)号：US07227208B2

公开(公告)日：2007-06-05

申请号：US11190964

申请日：2005-07-28

申请人： Masanori Ogura ,  Fumihiro Inui ,  Toru Koizumi ,  Seiichiro Sakai

发明人： Masanori Ogura ,  Fumihiro Inui ,  Toru Koizumi ,  Seiichiro Sakai

IPC分类号： H01L27/146 ,  H01L31/14

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035236

摘要： The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.

摘要翻译： 本发明是为了抑制光电二极管的漏电流和漏电流的不均匀性。 在具有比形成在p型半导体中形成的n型半导体区域的光电二极管和相邻元件之间形成的元件隔离绝缘膜中的浓度高的沟道停止区域的光电转换装置中， 形成在元件隔离绝缘膜下面的布线层和形成在元件隔离绝缘膜上的部分中的布线层，与光电二极管相邻的元件隔离绝缘膜上的布线层在有效区域和电位中被统一， 并且在穿过元件隔离绝缘膜的与布线层相对的区域的至少一部分中提供了比沟道停止区域中更高浓度的p型暗电流减小区域。

公开(公告)号：US20120280295A1

公开(公告)日：2012-11-08

申请号：US13478871

申请日：2012-05-23

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

摘要翻译： 图像拾取装置包括各自包括光电转换单元和转印单元的像素。 光电转换单元包括第一导电型第一半导体区和第二导电型第二半导体区。 第二导电型第三半导体区域形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上。 在光电转换单元和第三半导体区域之间形成具有高于第一半导体区域的杂质浓度的杂质浓度的第一导电型第四半导体区域。 具有比第一半导体区域高的杂质浓度的第一导电型第五半导体区域配置在光电转换单元和第三半导体区域之间，并且布置在比第四半导体区域更深的位置。

公开(公告)号：US20060027843A1

公开(公告)日：2006-02-09

申请号：US11190964

申请日：2005-07-28

申请人： Masanori Ogura ,  Fumihiro Inui ,  Toru Koizumi ,  Seiichiro Sakai

发明人： Masanori Ogura ,  Fumihiro Inui ,  Toru Koizumi ,  Seiichiro Sakai

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035236

摘要： The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.

摘要翻译： 本发明是为了抑制光电二极管的漏电流和漏电流的不均匀性。 在具有比形成在p型半导体中形成的n型半导体区域的光电二极管和相邻元件之间形成的元件隔离绝缘膜中的浓度高的沟道停止区域的光电转换装置中， 形成在元件隔离绝缘膜下面的布线层和形成在元件隔离绝缘膜上的部分中的布线层，与光电二极管相邻的元件隔离绝缘膜上的布线层在有效区域和电位中被统一， 并且在穿过元件隔离绝缘膜的与布线层相对的区域的至少一部分中提供了比沟道停止区域中更高浓度的p型暗电流减小区域。

公开(公告)号：US07943975B2

公开(公告)日：2011-05-17

申请号：US12555854

申请日：2009-09-09

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

摘要翻译： 固态成像装置包括多个像素，每个像素包括光电转换单元，放大晶体管和复位晶体管。 光电转换单元布置在半导体衬底上的第一导电类型的阱中。 放大晶体管或复位晶体管的源极或漏极区域布置在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间。 在第一像素中，在源极或漏极区域与光电转换单元之间布置有比第一导电类型的阱高的杂质浓度的第一半导体区域，并且布置第一导电类型的第二半导体区域 在第一个半导体区域。

公开(公告)号：US20100020212A1

公开(公告)日：2010-01-28

申请号：US12555854

申请日：2009-09-09

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H04N5/335

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

摘要翻译： 固态成像装置包括多个像素，每个像素包括光电转换单元，放大晶体管和复位晶体管。 光电转换单元布置在半导体衬底上的第一导电类型的阱中。 放大晶体管或复位晶体管的源极或漏极区域布置在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间。 在第一像素中，在源极或漏极区域与光电转换单元之间布置有比第一导电类型的阱高的杂质浓度的第一半导体区域，并且布置第一导电类型的第二半导体区域 在第一个半导体区域。

公开(公告)号：US20050269604A1

公开(公告)日：2005-12-08

申请号：US11146131

申请日：2005-06-07

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

摘要翻译： 本发明使用包括多个像素的图像拾取装置，所述多个像素分别包括用于将入射光转换成信号电荷的光电转换单元，用于放大由光电转换单元产生的信号电荷的放大单元和用于传送信号的转移单元 由光电转换单元向放大单元充电，其中光电转换单元由第一导电型第一半导体区和第二导电型第二半导体区和第二导电型第三半导体区形成 形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上，第一导电型第四半导体区域的杂质浓度高于 第一半导体区域形成在光电转换单元之间 光电转换单元和第三半导体层之间包括第三半导体区域和形成在比第四半导体区域更深的位置并且具有高于第一半导体区域的杂质浓度的第一导电型第五半导体区域 地区。

公开(公告)号：US08624307B2

公开(公告)日：2014-01-07

申请号：US13478871

申请日：2012-05-23

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

摘要翻译： 图像拾取装置包括各自包括光电转换单元和转印单元的像素。 光电转换单元包括第一导电型第一半导体区和第二导电型第二半导体区。 第二导电型第三半导体区域形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上。 在光电转换单元和第三半导体区域之间形成具有高于第一半导体区域的杂质浓度的杂质浓度的第一导电型第四半导体区域。 具有比第一半导体区域高的杂质浓度的第一导电型第五半导体区域配置在光电转换单元和第三半导体区域之间，并且布置在比第四半导体区域更深的位置。

公开(公告)号：US08207561B2

公开(公告)日：2012-06-26

申请号：US13052216

申请日：2011-03-21

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

摘要翻译： 本发明使用包括多个像素的图像拾取装置，所述多个像素分别包括用于将入射光转换成信号电荷的光电转换单元，用于放大由光电转换单元产生的信号电荷的放大单元和用于传送信号的转移单元 由光电转换单元向放大单元充电，其中光电转换单元由第一导电型第一半导体区和第二导电型第二半导体区和第二导电型第三半导体区形成 形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上，第一导电型第四半导体区域的杂质浓度高于 第一半导体区域形成在光电转换单元之间 光电转换单元和第三半导体层之间包括第三半导体区域和形成在比第四半导体区域更深的位置并且具有高于第一半导体区域的杂质浓度的第一导电型第五半导体区域 地区。

公开(公告)号：US07605415B2

公开(公告)日：2009-10-20

申请号：US11146131

申请日：2005-06-07

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

摘要翻译： 本发明使用包括多个像素的图像拾取装置，所述多个像素分别包括用于将入射光转换成信号电荷的光电转换单元，用于放大由光电转换单元产生的信号电荷的放大单元和用于传送信号的转移单元 由光电转换单元向放大单元充电，其中光电转换单元由第一导电型第一半导体区和第二导电型第二半导体区和第二导电型第三半导体区形成 形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上，第一导电型第四半导体区域的杂质浓度高于 第一半导体区域形成在光电转换单元之间 光电转换单元和第三半导体层之间包括第三半导体区域和形成在比第四半导体区域更深的位置并且具有高于第一半导体区域的杂质浓度的第一导电型第五半导体区域 地区。