Method of manufacturing semiconductor device
    1.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08673739B2

    公开(公告)日:2014-03-18

    申请号:US13303519

    申请日:2011-11-23

    IPC分类号: H01L21/30

    摘要: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

    摘要翻译: 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法,该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜(其是如果在元件上直接形成保护膜时可能损坏元件的保护膜)预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离,并在其上形成的元件在基板上转印以密封元件。

    Method for manufacturing semiconductor device
    2.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07622361B2

    公开(公告)日:2009-11-24

    申请号:US11822609

    申请日:2007-07-09

    摘要: It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

    摘要翻译: 本发明的目的是提供一种不会损伤剥离层的剥离方法,并且不仅剥离具有小尺寸区域的剥离层,而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中,在粘贴固定基板之后,通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后,通过从去除部分剥离而以优选的收率进行剥离。 此外,通过用树脂覆盖端子电极(包括端子电极的周边区域)的连接部分以外的整个面来防止裂纹。

    Method for manufacturing semiconductor device
    4.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07883989B2

    公开(公告)日:2011-02-08

    申请号:US12578722

    申请日:2009-10-14

    摘要: It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

    摘要翻译: 本发明的目的是提供一种不会损伤剥离层的剥离方法,并且不仅剥离具有小尺寸区域的剥离层,而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中,在粘贴固定基板之后,通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后,通过从去除部分剥离而以优选的收率进行剥离。 此外,通过用树脂覆盖端子电极(包括端子电极的周边区域)的连接部分以外的整个面来防止裂纹。

    Semiconductor device, method of manufacturing thereof, and method of manufacturing base material
    5.
    发明授权
    Semiconductor device, method of manufacturing thereof, and method of manufacturing base material 有权
    半导体装置及其制造方法以及基材的制造方法

    公开(公告)号:US07595256B2

    公开(公告)日:2009-09-29

    申请号:US11798094

    申请日:2007-05-10

    IPC分类号: H01L21/30 H01L21/46

    摘要: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

    摘要翻译: 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法,该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜(其是如果在元件上直接形成保护膜时可能损坏元件的保护膜)预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离,并在其上形成的元件在基板上转印以密封元件。

    Method of manufacturing semiconductor device including protective film
    6.
    发明授权
    Method of manufacturing semiconductor device including protective film 有权
    制造包括保护膜的半导体器件的方法

    公开(公告)号:US08067294B2

    公开(公告)日:2011-11-29

    申请号:US12566040

    申请日:2009-09-24

    IPC分类号: H01L21/20

    摘要: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

    摘要翻译: 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法,该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜(其是如果在元件上直接形成保护膜时可能损坏元件的保护膜)预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离,并在其上形成的元件在基板上转印以密封元件。

    Method for manufacturing semiconductor device
    8.
    发明申请
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20080009106A1

    公开(公告)日:2008-01-10

    申请号:US11822609

    申请日:2007-07-09

    IPC分类号: H01L21/46 H01L21/84

    摘要: It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

    摘要翻译: 本发明的目的是提供一种不会损伤剥离层的剥离方法,并且不仅剥离具有小尺寸区域的剥离层,而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中,在粘贴固定基板之后,通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后,通过从去除部分剥离而以优选的收率进行剥离。 此外,通过用树脂覆盖端子电极(包括端子电极的周边区域)的连接部分以外的整个面来防止裂纹。

    Method for manufacturing semiconductor device
    9.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07241666B2

    公开(公告)日:2007-07-10

    申请号:US10967279

    申请日:2004-10-19

    摘要: It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

    摘要翻译: 本发明的目的是提供一种不会损伤剥离层的剥离方法,并且不仅剥离具有小尺寸区域的剥离层,而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中,在粘贴固定基板之后,通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后,通过从去除部分剥离而以优选的收率进行剥离。 此外,通过用树脂覆盖端子电极(包括端子电极的周边区域)的连接部分以外的整个面来防止裂纹。

    Semiconductor device, method of manufacturing thereof, and method of manufacturing base material
    10.
    发明授权
    Semiconductor device, method of manufacturing thereof, and method of manufacturing base material 有权
    半导体装置及其制造方法以及基材的制造方法

    公开(公告)号:US07229900B2

    公开(公告)日:2007-06-12

    申请号:US10973426

    申请日:2004-10-27

    IPC分类号: H01L21/30 B44C1/165

    摘要: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

    摘要翻译: 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法,该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜(其是如果在元件上直接形成保护膜时可能损坏元件的保护膜)预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离,并在其上形成的元件在基板上转印以密封元件。