公开(公告)号：US07014704B2

公开(公告)日：2006-03-21

申请号：US10455609

申请日：2003-06-06

申请人： Toshiaki Ono ,  Tadami Tanaka ,  Shigeru Umeno ,  Eiichi Asayama ,  Hideshi Nishikawa

发明人： Toshiaki Ono ,  Tadami Tanaka ,  Shigeru Umeno ,  Eiichi Asayama ,  Hideshi Nishikawa

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/206

摘要： A method for growing a silicon single crystal used for semiconductor integrated circuit devices, wherein the single crystal is grown by the CZ method at a nitrogen concentration of 1×1013 atoms/cm3–1×1015 atoms/cm3 with a cooling rate of not less than 2.5° C./min at a crystal temperature of 1150° C.–1000° C., in which case, the pulling rate is adjusted such that the outside diameter of a circular region including oxidation-induced stacking faults generated at the center of a wafer which is subjected to the oxidation heat treatment at high temperature is not more than ⅗ of the wafer diameter, wherein the wafer is prepared by slicing the grown single crystal. In the growth method, the concentration of oxygen in the silicon single crystal is preferably not more than 9×1017 atoms/cm3 (ASTM '79). With this method, the silicon single crystal, in which the generation of Grown-in defects can be effectively suppressed, can be produced in a simple process without any increase in the production cost. Moreover, a specification of the oxygen concentration and the application of the outward diffusion treatment are capable of producing a wafer, which is optimally used for monitoring particles.

摘要翻译： 一种生长用于半导体集成电路器件的硅单晶的方法，其中通过CZ法以1×10 3原子/ cm 3的氮浓度生长单晶。 -1×10 15原子/ cm 3，冷却速率不低于2.5℃/分钟，晶体温度为1150℃-1000℃， 在这种情况下，调整拉伸速度，使得在高温下进行氧化热处理的晶片的中心处产生的氧化诱发堆垛层错的圆形区域的外径不大于 晶片直径，其中通过对生长的单晶进行切片来制备晶片。 在生长方法中，硅单晶中氧的浓度优选不超过9×10 17原子/ cm 3（ASTM '79）。 利用这种方法，可以在简单的工艺中生产出能够有效抑制生成缺陷的硅单晶，而不会增加生产成本。 此外，氧浓度的规格和向外扩散处理的应用能够生产最佳地用于监测颗粒的晶片。

公开(公告)号：US06835245B2

公开(公告)日：2004-12-28

申请号：US09883922

申请日：2001-06-20

申请人： Toshiaki Ono ,  Tadami Tanaka ,  Eiichi Asayama ,  Hideshi Nishikawa ,  Masataka Horai

发明人： Toshiaki Ono ,  Tadami Tanaka ,  Eiichi Asayama ,  Hideshi Nishikawa ,  Masataka Horai

IPC分类号： C30B3302

CPC分类号： C30B29/06 ,  C30B15/206

摘要： Epitaxial wafers showing marked IG effects can be manufactured from silicon single crystals doped or not doped with nitrogen without requiring any additional heat treatment process step while reducing the density of epitaxial layer defects. According to the first manufacturing method, an epitaxial layer is allowed to grow on the surface of a wafer sliced from a single crystal produced by employing a cooling rate of not less than 7.3° C./min in the temperature range of 1200-1050° C. in the step of pulling up thereof. According to the second manufacturing method, an epitaxial layer is allowed to grow on the surface of a silicon wafer sliced from a silicon single crystal doped with 1×1012 atoms/cm3 to 1×1014 atoms/cm3 as produced by employing a cooling rate of not less than 2.7° C./min in the temperature range of 1150-1020° C. and then a cooling rate of not more than 1.2° C./min in the temperature range of 1000-850° C. in the step of pulling up thereof.

摘要翻译： 显示出显着的IG效应的外延晶片可以由掺杂或不掺杂氮的单晶硅制造，而不需要任何额外的热处理工艺步骤，同时降低外延层缺陷的密度。 根据第一种制造方法，允许外延层在从在1200-1050°的温度范围内采用不低于7.3℃/分钟的冷却速率制备的单晶切片的晶片的表面上生长 C.在拉起它的步骤。 根据第二制造方法，允许外延层在从掺杂有1×10 12原子/ cm 3至1×10 14原子/ cm 3的硅单晶切片的硅晶片的表面上生长， 通过在1150-1020℃的温度范围内使用不低于2.7℃/分钟的冷却速率，然后在1000℃的温度范围内的冷却速度不超过1.2℃/ 850℃。

公开(公告)号：US06709957B2

公开(公告)日：2004-03-23

申请号：US10173099

申请日：2002-06-18

申请人： Eiichi Asayama ,  Yasuo Koike ,  Tadami Tanaka ,  Toshiaki Ono ,  Masataka Horai ,  Hideshi Nishikawa

发明人： Eiichi Asayama ,  Yasuo Koike ,  Tadami Tanaka ,  Toshiaki Ono ,  Masataka Horai ,  Hideshi Nishikawa

IPC分类号： H01L2136

CPC分类号： C30B29/06 ,  C30B15/206 ,  C30B33/00

摘要： The invention relates to a method of producing epitaxial wafers for the manufacture of high integration density devices capable of showing stable gettering effect. Specifically, it provides (1) a method of producing epitaxial wafers which comprises subjecting a silicon wafer sliced from a single crystal ingot grown by doping with not less than 1×1013 atoms/cm3 of nitrogen to 15 minutes to 4 hours of heat treatment at a temperature not lower than 700° C. but lower than 900° C. and then to epitaxial growth treatment. It is desirable that the above single crystal ingot have an oxygen concentration of not less than 11×1017 atoms/cm3. Further, (2) the above heat treatment is desirably carried out prior to the step of mirror polishing of silicon wafers. Furthermore, (3) it is desirable that the pulling rate be not increased in starting tail formation as compared with the pulling rate of the body in growing the above single crystal ingot. By taking these means, it is possible to produce epitaxial wafers having an almost constant, high level of gettering effect irrespective of the site of wafer slicing from the single crystal ingot and, furthermore, suppress the occurrence of defects within the epitaxial layer.

摘要翻译： 本发明涉及一种生产用于制造能够显示出稳定的吸气效果的高集成度密度器件的外延晶片的方法。 具体地说，提供（1）一种外延晶片的制造方法，其特征在于，将从不少于1×10 13原子/ cm 3的氮掺杂生长的单晶锭切片的硅晶片经受15分钟〜4小时 在不低于700℃但低于900℃的温度下进行热处理，然后进行外延生长处理。 上述单晶锭的氧浓度最好不小于11×10 17原子/ cm 3。 此外，（2）上述热处理期望在硅晶片的镜面抛光步骤之前进行。 此外，（3）与在上述单晶锭生长中的本体的拉拔速度相比，起始尾部形成时的牵引速度最好不增加。 通过采用这些方法，可以制造具有几乎恒定的高水平的吸杂效应的外延晶片，而不管来自单晶锭的晶片切片的位置如何，并且还抑制外延层内的缺陷的发生。

公开(公告)号：US06569237B2

公开(公告)日：2003-05-27

申请号：US09884994

申请日：2001-06-21

申请人： Tadami Tanaka ,  Toshiaki Ono ,  Eiichi Asayama

发明人： Tadami Tanaka ,  Toshiaki Ono ,  Eiichi Asayama

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/206

摘要： A method of producing high-quality epitaxial wafers with scarce occurrence of epitaxial layer defects by allowing an epitaxial layer on wafers sliced from a nitrogen-doped silicon single crystal as well as a method of pulling up a silicon single crystal to serve as the raw material therefore is provided. More particularly, a method of pulling up a single crystal from a nitrogen-doped silicon material melt while allowing the single crystal to grow is provided which comprises employing a passing or residence time in the temperature range of 1150-1050° C. of not less than 50 minutes and/or a passing or residence time in the temperature range of 1050-950° C. of not more than 40 minutes in the step of pulling up of the single crystal. Further, a method of manufacturing epitaxial wafers is provided which comprises allowing an epitaxial layer on the surface of silicon wafers sliced from the single crystal pulled up by the method mentioned above.

公开(公告)号：US06641888B2

公开(公告)日：2003-11-04

申请号：US10055340

申请日：2002-01-25

申请人： Eiichi Asayama ,  Masataka Horai ,  Shigeru Umeno ,  Shinsuke Sadamitsu ,  Yasuo Koike ,  Kouji Sueoka ,  Hisashi Katahama

发明人： Eiichi Asayama ,  Masataka Horai ,  Shigeru Umeno ,  Shinsuke Sadamitsu ,  Yasuo Koike ,  Kouji Sueoka ,  Hisashi Katahama

IPC分类号： C30B2906

CPC分类号： C30B15/00 ,  C30B29/06 ,  Y10T428/21

摘要： There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.

摘要翻译： 提供了具有适合于大规模集成器件的足够的吸气效应的硅单晶，硅晶片和外延晶片。 适用于外延晶片的硅单晶以1×10 13原子/ cm 3或更高的浓度氮掺杂或以1×10 12原子/ cm 3的浓度氮掺杂生长 并且以0.1×10 16〜10×10 16原子/ cm 3的浓度进行碳掺杂和/或以1×10 17个/ cm 3以上的浓度掺杂的硼。 通过从硅单晶切片制造硅晶片，并且在硅晶片的表面上生长外延层以制造外延晶片。 本发明提供了一种用于大规模集成器件的外延晶片，其在器件活性区域中没有缺陷，并且具有优异的吸气效应，而没有外部或内在的吸气处理。

公开(公告)号：US06365461B1

公开(公告)日：2002-04-02

申请号：US09679888

申请日：2000-10-05

申请人： Eiichi Asayama ,  Shigeru Umeno ,  Masataka Hourai

发明人： Eiichi Asayama ,  Shigeru Umeno ,  Masataka Hourai

IPC分类号： H01L21336

CPC分类号： C30B29/06 ,  C30B15/00

摘要： Methods are designed to manufacture an epitaxial wafer wherein the formation of defects in an epitaxial layer is sufficiently suppressed even if the epitaxial wafer is prepared from a silicon single crystal which is grown while doped with nitrogen. Specifically, the methods are to grow an epitaxial layer on a wafer sliced from (1) a silicon single crystal wherein the oxygen concentration at an OSF ring region is 9×1017 atoms/cm3 or less, (2) a silicon single crystal wherein the inside diameter of an OSF ring region is located at a position which is 85% or more of the wafer diameter, and (3) a silicon single crystal doped with nitrogen at a concentration between 1×1012 atoms/cm3 or more and 1×1014 atoms/cm3 or less. Further, another method is to grow an epitaxial layer on (4) a wafer sliced from a silicon single crystal doped with nitrogen at a concentration between 1×1012 atoms/cm3 or more and less than 1×1014 atoms/cm3, the epitaxial layer being grown after the sliced wafer has been heat-treated at a temperature between 1200° C. and 1300° C. for 1 minute or more. According to the above methods, the density of defects in an epitaxial layer can be reduced to 0.1 piece/cm2 or less.

摘要翻译： 设计了制造外延晶片的方法，其中即使外延晶片由掺杂氮气的同时生长的硅单晶制备，外延层中的缺陷的形成被充分抑制。 具体地说，该方法是在从（1）硅单晶切片的晶片上生长外延层，其中OSF环区的氧浓度为9×10 17原子/ cm 3以下，（2）硅单晶，其中内径 的OSF环区域位于晶片直径的85％以上的位置，（3）以1×10 12原子/ cm 3以上且1×10 14原子/ cm 3以下的浓度掺杂氮的硅单晶。 此外，另一种方法是在（4）从掺杂有氮的单晶硅以1×10 12原子/ cm 3以上至小于1×10 14原子/ cm 3的浓度切割的晶片上生长外延层，外延层在 切片晶片在1200℃至1300℃的温度下进行1分钟以上的热处理。 根据上述方法，外延层中的缺陷密度可以降低到0.1个/ cm 2以下。

公开(公告)号：US06878451B2

公开(公告)日：2005-04-12

申请号：US10384534

申请日：2003-03-11

申请人： Eiichi Asayama ,  Masataka Horai ,  Hiroki Murakami ,  Takayuki Kubo

发明人： Eiichi Asayama ,  Masataka Horai ,  Hiroki Murakami ,  Takayuki Kubo

IPC分类号： C30B15/00 ,  B32B9/00 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T428/21

摘要： There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016-5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.

摘要翻译： 提供了具有适合于大规模集成器件的足够的吸气效应的硅单晶，硅晶片和外延晶片。 适用于外延晶片的硅单晶以1×10 13原子/ cm 3或更高的浓度氮掺杂或以1×10 12原子/ cm 3的浓度氮掺杂生长 并且以0.1×10 16〜10×10 16原子/ cm 3的浓度进行碳掺杂和/或以1×10 17个/ cm 3以上的浓度掺杂的硼。 通过从硅单晶切片制造硅晶片，并且在硅晶片的表面上生长外延层以制造外延晶片。 本发明提供了一种用于大规模集成器件的外延晶片，其在器件活性区域中没有缺陷，并且具有优异的吸气效应，而没有外部或固有吸气处理的性能，这是增加生产步骤数量的因素 和生产成本。