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公开(公告)号：US20120167625A1
公开(公告)日：2012-07-05
申请号：US13337888
申请日：2011-12-27
申请人： Toshiaki SUDO , Eriko SUZUKI
发明人： Toshiaki SUDO , Eriko SUZUKI
CPC分类号： C03B19/095 , G01J5/0003 , G01J5/0044 , G01J5/047
摘要： The present invention provides a method of manufacturing a vitreous silica crucible including: a silica powder supplying process of supplying a material silica powder into a mold for molding a vitreous silica crucible, to form a silica powder layer, and an arc fusing process of arc fusing the silica powder layer by arc discharge generated by carbon electrodes, wherein the arc fusing process includes processes of measuring temperatures at measuring points provided on different heights of an inner surface of the silica powder layer while rotating the mold, and controlling the arc discharge to enable detection, at each measuring point, of a local maximum point which appears first in the arc fusing process.
摘要翻译： 本发明提供一种石英玻璃坩埚的制造方法，其特征在于，包括：二氧化硅粉末供给工序，其将二氧化硅粉末供给到用于成型二氧化硅玻璃坩埚的模具中，形成二氧化硅粉末层，以及电弧熔合电弧熔合工艺 所述二氧化硅粉末层由碳电极产生的电弧放电，其中所述电弧定影处理包括在旋转所述模具的同时测量在所述二氧化硅粉末层的内表面的不同高度上设置的测量点处的温度，并且控制所述电弧放电以使得能够 在每个测量点检测首先出现在电弧定影过程中的局部最大点。
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公开(公告)号：US20120132133A1
公开(公告)日：2012-05-31
申请号：US13307253
申请日：2011-11-30
申请人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
发明人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C03B19/095 , Y10T117/1032
摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm−1 and 606 cm−1, respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.
摘要翻译： 本发明提供了一种可以抑制坩埚的翘曲和侧壁降低的氧化硅玻璃坩埚，而不用担心杂质混入硅熔体中。 根据本发明，提供一种用于拉制硅单晶的玻璃状石英坩埚，其中I2 / I1比为0.67-1.17，其中I1和I2是在492cm-1和606cm-1处的峰的面积强度 分别具有从坩埚的壁的外表面到内表面的厚度为2mm的区域的玻璃态二氧化硅的拉曼光谱。
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公开(公告)号：US20120167627A1
公开(公告)日：2012-07-05
申请号：US13337918
申请日：2011-12-27
申请人： Toshiaki SUDO , Eriko SUZUKI
发明人： Toshiaki SUDO , Eriko SUZUKI
IPC分类号： C03B20/00
CPC分类号： C03B19/095
摘要： There is provided a method of manufacturing a vitreous silica crucible having a suitably controlled inner surface property. The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes including: a preparation process for determining optimal fusing temperatures during heating and fusing the silica powder layer at plural points of different heights of the silica powder layer; a temperature measuring process for measuring actual temperatures during heating and fusing the silica powder layer at the plural points; a temperature controlling process for controlling the actual temperatures at the plural points so that the actual temperatures matches the optimal fusing temperatures at the respective points.
摘要翻译： 提供了一种具有适当控制的内表面性能的石英玻璃坩埚的制造方法。 本发明提供一种通过碳化硅电极产生的电弧放电加热熔融旋转模具中的二氧化硅粉末层而制造石英玻璃坩埚的方法，包括：在加热和熔融二氧化硅粉末层期间确定最佳定影温度的制备方法 二氧化硅粉末层的不同高度的多个点; 用于在多个点加热和熔融二氧化硅粉末层期间测量实际温度的温度测量过程; 用于控制多个点处的实际温度的温度控制过程，使得实际温度与各个点处的最佳定影温度相匹配。
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公开(公告)号：US20120167623A1
公开(公告)日：2012-07-05
申请号：US13335892
申请日：2011-12-22
申请人： Toshiaki SUDO , Eriko SUZUKI
发明人： Toshiaki SUDO , Eriko SUZUKI
CPC分类号： C03B19/095 , C03B2201/02 , G01J5/0022 , G01J5/0037 , G01J5/0862 , Y02P40/57
摘要： Accurate temperature measurement during manufacturing a vitreous silica crucible is enabled. The present invention provides an apparatus for manufacturing a vitreous silica crucible including: a mold for forming a silica powder layer by supplying silica powder therein; an arc discharge unit having carbon electrodes and a power supply unit and for heating and fusing the silica powder layer by arc discharge; and a temperature measurement unit for measuring temperature of a fused portion in the mold, wherein the temperature measurement unit is an radiation thermometer for measuring temperature by detecting radiation energy of a wavelength of 4.8 to 5.2 μm.
摘要翻译： 在制造玻璃状石英坩埚期间能够进行精确的温度测量。 本发明提供一种二氧化硅玻璃坩埚的制造装置，其特征在于，包括：通过在其中供给二氧化硅粉末而形成二氧化硅粉末层的模具; 具有碳电极和电源单元的电弧放电单元，用于通过电弧放电加热和熔融二氧化硅粉末层; 以及用于测量模具中的熔融部分的温度的温度测量单元，其中温度测量单元是通过检测4.8至5.2μm的波长的辐射能量来测量温度的辐射温度计。
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5.发明申请VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON INGOT 有权耐热二氧化硅溶液及其制造方法以及制造硅胶的方法公开(公告)号：US20110315072A1
公开(公告)日：2011-12-29
申请号：US13166189
申请日：2011-06-22
申请人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
发明人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
CPC分类号： C30B15/10 , C03B19/095 , C30B29/06 , C30B35/002 , Y10T117/1032
摘要： Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm.
摘要翻译： 本发明提供一种玻璃状石英坩埚，即使在硅锭的拉伸时间极长的情况下也能够有效地抑制侧壁的向下的下垂和翘曲。 根据本发明，提供了一种用于拉制硅单晶的石英玻璃坩埚，其中坩埚具有从坩埚的内表面朝向外表面的包含具有气泡含量率的透明玻璃状二氧化硅层的壁 小于0.5％的气泡含量为1％以上且小于50％的含气泡的玻璃状二氧化硅层，气泡含量率为0.5％以上且小于1.0％的半透明玻璃状石英层， OH基浓度为35ppm以上且小于300ppm。
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公开(公告)号：US20120167628A1
公开(公告)日：2012-07-05
申请号：US13337948
申请日：2011-12-27
申请人： Toshiaki SUDO , Eriko SUZUKI
发明人： Toshiaki SUDO , Eriko SUZUKI
CPC分类号： C03B19/095 , G01J5/0022 , Y02P40/57
摘要： The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes comprising: a preparation process for determining optimal temperatures during heating and fusing the silica powder layer for one or more selected from the group consisting of the silica powder layer, fume generated during arc fusing, and arc flame generated in the arc discharge; a temperature measuring process for measuring actual temperatures during heating and fusing for one or more selected from the group where the optimal temperatures are determined; and a temperature controlling process for controlling the actual temperatures for one or more selected from the group where the actual temperatures are measured so that the actual temperatures match the optimal temperatures.
摘要翻译： 本发明提供一种通过由碳电极产生的电弧放电加热和熔融旋转模具中的二氧化硅粉末层而制造石英玻璃坩埚的方法，包括：用于确定加热期间的最佳温度并将二氧化硅粉末层熔合在一起的制备方法 或更多选自二氧化硅粉末层，电弧熔合时产生的烟雾和在电弧放电中产生的电弧火焰; 用于测量加热和熔化中的实际温度的温度测量过程，所述温度是从确定最佳温度的组中选出的一种或多种; 以及用于控制从实际温度被测量的组中选出的一个或多个实际温度的温度控制过程，使得实际温度与最佳温度相匹配。
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公开(公告)号：US20120167624A1
公开(公告)日：2012-07-05
申请号：US13337845
申请日：2011-12-27
申请人： Toshiaki SUDO , Eriko SUZUKI
发明人： Toshiaki SUDO , Eriko SUZUKI
CPC分类号： C03B19/095 , Y02P40/57
摘要： The present invention provides a method of manufacturing a vitreous silica crucible including: a silica powder supplying process of supplying a material silica powder into a mold for molding a crucible, to form a silica powder layer, and an arc fusing process of arc fusing the silica powder layer by arc discharge generated by carbon electrodes, wherein the arc fusing process includes processes of measuring a temperature of the silica powder layer, and controlling a vitreous silica fused state based on a reference temperature which is a temperature at a local maximum point which appears first in the arc fusing process.
摘要翻译： 本发明提供一种石英玻璃坩埚的制造方法，其特征在于，包括：二氧化硅粉末供给工序，将二氧化硅粉末供给到用于成型坩埚的模具中，形成二氧化硅粉末层，以及电弧熔合二氧化硅 由碳电极产生的电弧放电的粉末层，其中电弧熔合工艺包括测量二氧化硅粉末层的温度和基于作为出现的局部最大点处的温度的参考温度来控制氧化硅熔融状态的过程 首先在电弧定影过程中。
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8.发明申请公开(公告)号：US20120285372A1
公开(公告)日：2012-11-15
申请号：US13106993
申请日：2011-05-13
申请人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
发明人： Toshiaki SUDO , Hiroshi KISHI , Eriko SUZUKI
CPC分类号： C03B19/095 , C30B11/002 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： Provided is a vitreous silica crucible for pulling a silicon single crystal, which stably suppresses surface vibration of a silicon melted solution filled therein and has a long life, and a method for manufacturing the same. The vitreous silica crucible for pulling a silicon single crystal includes a peripheral wall portion, a curved portion, and a bottom portion, wherein a plurality of minute concave portions are formed on a certain area of an inner surface of the peripheral wall portion, and a plurality of bubbles are formed on a lower position of the minute concave portions.
摘要翻译： 本发明提供一种用于拉伸硅单晶的玻璃状石英坩埚，其能够稳定地抑制填充在其中的硅熔融溶液的表面振动并且具有长寿命及其制造方法。 用于拉出硅单晶的玻璃状石英坩埚包括周壁部分，弯曲部分和底部部分，其中在周壁部分的内表面的特定区域上形成有多个微小凹部， 在微小凹部的下部位置形成有多个气泡。
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公开(公告)号：US20110079047A1
公开(公告)日：2011-04-07
申请号：US12893326
申请日：2010-09-29
申请人： Eriko SUZUKI , Hiroshi KISHI
发明人： Eriko SUZUKI , Hiroshi KISHI
CPC分类号： C03B19/095 , C30B15/10 , Y02P40/57
摘要： Provided are an apparatus and a method for manufacturing a vitreous silica crucible, which enable accurate measurement of a fume generation amount, prevention of deterioration of an inner surface property, and real-time control of a raw material melting state. Provided is an apparatus for manufacturing a vitreous silica crucible 50 by supplying silica powder into a mold 10 to form a silica powder layer 11, and heating and melting the silica powder layer 11 by arc discharge. The apparatus includes the mold 10 for defining an outer shape of a vitreous silica crucible, an arc discharge unit having a plurality of carbon electrodes 13 and a power-supply unit 40, and a fume-amount measurement unit 30 for detecting an amount of fumes 80 generated in the mold 10.
摘要翻译： 提供一种制造石英玻璃坩埚的装置和方法，其能够精确测量烟气产生量，防止内表面性质的劣化，以及原料熔化状态的实时控制。 提供一种通过将二氧化硅粉末供给到模具10中以形成二氧化硅粉末层11并通过电弧放电来加热和熔化二氧化硅粉末层11来制造石英玻璃坩埚50的装置。 该装置包括用于限定氧化硅玻璃坩埚的外形的模具10，具有多个碳电极13和电源单元40的电弧放电单元和用于检测烟雾量的烟雾量测量单元30 80在模具10中产生。
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