公开(公告)号：US20200066749A1

公开(公告)日：2020-02-27

申请号：US16284395

申请日：2019-02-25

Applicant: Toshiba Memory Corporation

Inventor： Hiroyuki YAMASAKI ,  Hideaki HARAKAWA

IPC: H01L27/11582 ,  H01L27/1157 ,  G11C16/04

Abstract: According to one embodiment, a semiconductor memory device includes first conductive films, a second conductive film, a first pillar including a first semiconductor film and a first insulator, a second semiconductor film, and a second pillar including a second insulator and a third conductive film. The first conductive films are stacked with respective insulator layers interposed therebetween. The second conductive film is provided above the first conductive films with an insulator layer interposed therebetween. The first semiconductor film penetrate the first conductive films in a stacking direction of the first conductive films. The first insulator is provided on a side surface of the first semiconductor film.

公开(公告)号：US20200273876A1

公开(公告)日：2020-08-27

申请号：US16530741

申请日：2019-08-02

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takayuki KASHIMA ,  Kohei NYUI ,  Kotaro FUJII ,  Hiroyuki YAMASAKI

IPC: H01L27/11582 ,  G11C5/06 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: According to one embodiment, a semiconductor storage device includes a stacked body, a first semiconductor layer extending in the stacked body, a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer, a second conductor layer disposed above the stacked body, a second semiconductor layer extending through the second conductor layer, a third conductor layer disposed between the second semiconductor layer and the second conductor layer, a first insulator layer disposed above the third conductor layer, and a second insulator layer including a first portion disposed between the second semiconductor layer and the third conductor layer and a second portion disposed between the second semiconductor layer and the first insulator layer. A diameter of the second insulator layer is larger in the second portion than in the first portion.