公开(公告)号：US20180175057A1

公开(公告)日：2018-06-21

申请号：US15897623

申请日：2018-02-15

Applicant: Toshiba Memory Corporation

Inventor： Masaaki HIGUCHI ,  Masaru KITO ,  Masao SHINGU

IPC: H01L27/11582 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L29/66833 ,  H01L29/7926

Abstract: According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.