公开(公告)号：US07812893B2

公开(公告)日：2010-10-12

申请号：US11719028

申请日：2005-09-20

申请人： Toshifumi Yagi ,  Toshihide Tsubata ,  Tsuyoshi Tokuda ,  Kenji Enda ,  Yoshinori Shimada ,  Shinya Maruoka

发明人： Toshifumi Yagi ,  Toshihide Tsubata ,  Tsuyoshi Tokuda ,  Kenji Enda ,  Yoshinori Shimada ,  Shinya Maruoka

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/1337

CPC分类号： G02F1/133707 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286

摘要： An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.

摘要翻译： 有源矩阵基板抑制了生产成本的降低和生产步骤的增加，并且同时允许充分确保存储容量和提高像素的开口率。 有源矩阵基板是有源矩阵基板，并且包括设置在扫描信号线与基板上的数据信号线交叉的薄膜晶体管，薄膜晶体管包括连接到扫描信号线的栅电极，源极 连接到数据信号线的电极和连接到漏极引出布线的漏电极; 连接到漏极引出布线的存储电容器上电极和像素电极; 以及通过绝缘膜与所述保持电容器上部电极重叠的保持电容配线，其中所述保持电容配线具有通过所述绝缘膜与所述漏极引出配线重叠的延伸部。

公开(公告)号：US20090073335A1

公开(公告)日：2009-03-19

申请号：US11719028

申请日：2005-09-20

申请人： Toshifumi Yagi ,  Toshihide Tsubata ,  Tsuyoshi Tokuda ,  Kenji Enda ,  Yoshinori Shimada ,  Shinya Maruoka

发明人： Toshifumi Yagi ,  Toshihide Tsubata ,  Tsuyoshi Tokuda ,  Kenji Enda ,  Yoshinori Shimada ,  Shinya Maruoka

IPC分类号： G02F1/136 ,  H01L29/04

CPC分类号： G02F1/133707 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286

摘要： An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.

摘要翻译： 有源矩阵基板抑制了生产成本的降低和生产步骤的增加，并且同时允许充分确保存储容量和提高像素的开口率。 有源矩阵基板是有源矩阵基板，并且包括设置在扫描信号线与基板上的数据信号线交叉的薄膜晶体管，薄膜晶体管包括连接到扫描信号线的栅电极，源极 连接到数据信号线的电极和连接到漏极引出布线的漏电极; 连接到漏极引出布线的存储电容器上电极和像素电极; 以及通过绝缘膜与所述保持电容器上部电极重叠的保持电容配线，其中所述保持电容配线具有通过所述绝缘膜与所述漏极引出配线重叠的延伸部。

公开(公告)号：US07768584B2

公开(公告)日：2010-08-03

申请号：US12382799

申请日：2009-03-24

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

公开(公告)号：US07714948B2

公开(公告)日：2010-05-11

申请号：US11792563

申请日：2005-12-14

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。

公开(公告)号：US20080002076A1

公开(公告)日：2008-01-03

申请号：US11792563

申请日：2005-12-14

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343 ,  H01L21/84

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。

公开(公告)号：US20090225247A1

公开(公告)日：2009-09-10

申请号：US12382799

申请日：2009-03-24

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。

公开(公告)号：US08089571B2

公开(公告)日：2012-01-03

申请号：US12458215

申请日：2009-07-02

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate (12) includes a substrate, a TFT (24) formed on the substrate, a storage capacitor element (20) formed on the substrate, an interlayer insulating film covering the storage capacitor element (20), and a pixel electrode (21) formed on the interlayer insulating film. The storage capacitor element (20) includes a storage capacitor line (27), an insulating film formed on the storage capacitor line (27), and two or more storage capacitor electrodes (25a, 25b, 25c) opposed to the storage capacitor line (27) with the insulating film interposed therebetween. The two or more storage capacitor electrodes (25a, 25b, 25c) are electrically connected via associated contact holes (26a, 26b, 26c) formed in the interlayer insulating film to the pixel electrode (21) and electrically continuous with a drain electrode of the TFT (24).

摘要翻译： 有源矩阵基板（12）包括基板，形成在基板上的TFT（24），形成在基板上的辅助电容元件（20），覆盖该保持电容元件（20）的层间绝缘膜，以及像素电极 （21）形成在层间绝缘膜上。 存储电容器元件（20）包括辅助电容线（27），形成在辅助电容线（27）上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极（25a，25b，25c） 27），其间插入绝缘膜。 两个以上的保持电容电极（25a，25b，25c）通过形成在层间绝缘膜中的相关接触孔（26a，26b，26c）与像素电极（21）电连接，并与 TFT（24）。

公开(公告)号：US20090268116A1

公开(公告)日：2009-10-29

申请号：US12458215

申请日：2009-07-02

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate (12) includes a substrate, a TFT (24) formed on the substrate, a storage capacitor element (20) formed on the substrate, an interlayer insulating film covering the storage capacitor element (20), and a pixel electrode (21) formed on the interlayer insulating film. The storage capacitor element (20) includes a storage capacitor line (27), an insulating film formed on the storage capacitor line (27), and two or more storage capacitor electrodes (25a, 25b, 25c) opposed to the storage capacitor line (27) with the insulating film interposed therebetween. The two or more storage capacitor electrodes (25a, 25b, 25c) are electrically connected via associated contact holes (26a, 26b, 26c) formed in the interlayer insulating film to the pixel electrode (21) and electrically continuous with a drain electrode of the TFT (24).

摘要翻译： 有源矩阵基板（12）包括基板，形成在基板上的TFT（24），形成在基板上的辅助电容元件（20），覆盖该保持电容元件（20）的层间绝缘膜，以及像素电极 （21）形成在层间绝缘膜上。 存储电容器元件（20）包括辅助电容线（27），形成在辅助电容线（27）上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极（25a，25b，25c） 27），其间插入绝缘膜。 两个以上的保持电容电极（25a，25b，25c）通过形成在层间绝缘膜中的相关接触孔（26a，26b，26c）与像素电极（21）电连接，并与 TFT（24）。

公开(公告)号：US20090257008A1

公开(公告)日：2009-10-15

申请号：US12491015

申请日：2009-06-24

申请人： Toshifumi Yagi ,  Toshihide Tsubata ,  Tsuyoshi Tokuda

发明人： Toshifumi Yagi ,  Toshihide Tsubata ,  Tsuyoshi Tokuda

IPC分类号： G02F1/1335

CPC分类号： G02F1/133514 ,  G02F1/133512 ,  G02F1/13394

摘要： A color filter substrate and a liquid crystal display apparatus include, on a substrate: a colorized layer including color layers; a stacked layer protruding in comparison with the colorized layer; an opposing electrode covering the colorized layer and the stacked layer; an alignment layer formed at least on a part of the opposing electrode covering the colorized layer; and an insulating layer stacked on an entire surface of another part of the opposing electrode covering the stacked layer. With this, the short circuit between the opposing electrode and a pixel electrode is prevented, so that a color filter substrate, a liquid crystal display apparatus including the color filter substrate, and a method of manufacturing the color substrate, those being able to improve the yield of the liquid crystal display apparatus, are provided.

摘要翻译： 滤色器基板和液晶显示装置在基板上包括：着色层，包括彩色层; 与着色层相比突出的层叠层; 覆盖着色层和堆叠层的相对电极; 至少形成在覆盖着色层的相对电极的一部分上的取向层; 以及层叠在覆盖层叠层的对置电极的另一部分的整个表面上的绝缘层。 由此，防止了对置电极与像素电极之间的短路，使得滤色器基板，包括滤色器基板的液晶显示装置和彩色基板的制造方法能够改善 提供液晶显示装置的产量。

公开(公告)号：US20060017872A1

公开(公告)日：2006-01-26

申请号：US11183734

申请日：2005-07-19

申请人： Tsuyoshi Tokuda ,  Toshifumi Yagi ,  Toshihide Tsubata ,  Yoshinori Kinai ,  Ryuji Kurihara

发明人： Tsuyoshi Tokuda ,  Toshifumi Yagi ,  Toshihide Tsubata ,  Yoshinori Kinai ,  Ryuji Kurihara

IPC分类号： G02F1/1333

CPC分类号： G02F1/133514 ,  G02F1/133516 ,  G02F1/13394

摘要： The present invention is a color filter substrate comprising: a non-laminated part in which a colored layer and/or a transparent layer are arranged in a plane; and a laminated part in which parts of the colored layer and/or the transparent layer are laminated as two or more layers on a substrate, (1) a film thickness of a layer constituting the laminated part is not less than 90% and not more than 110% to a film thickness of a corresponding layer of the non-laminated part and/or (2) the colored layer and/or the transparent layer are formed using a dry film having a solid-phase resist layer having penetration amount in a penetration hardness test at 120° C. of not more than 0.5 μm.