公开(公告)号：US06171749B2

公开(公告)日：2001-01-09

申请号：US09239798

申请日：1999-01-29

申请人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/038 ,  Y10S430/106

摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising, as the essential ingredients, (A) an alkali-soluble resin, (B) a radiation-sensitive acid-generating agent and (C) a cross-linking agent. Characteristically, the component (B) is a combination of a halogenoacid-generating compound and a bis(alkylsulfonyl) diazomethane compound in a specified proportion. By virtue of this unique formulation of the composition, the photoresist composition can give a patterned resist layer having excellently orthogonal cross sectional profile in a high photosensitivity.

摘要翻译： 公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）辐射敏感性产酸剂和（C）交联剂作为必要成分。 特征地，组分（B）是指定比例的产生卤代酸的化合物和双（烷基磺酰基）重氮甲烷化合物的组合。 由于该组合物的这种独特配方，光致抗蚀剂组合物可以在高感光度下得到具有优异正交横截面轮廓的图案化抗蚀剂层。

公开(公告)号：US5976760A

公开(公告)日：1999-11-02

申请号：US898105

申请日：1997-07-22

申请人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

发明人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  G03C1/492

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formulaR.sup.1 --C(CN).dbd.N--O--SO.sub.2 --R.sup.2,in which R.sup.1 is an inert organic group and R.sup.2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.

摘要翻译： 提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。 特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂， 通式为R1-C（CN）= NO-SO2-R2，其中R1为惰性有机基团，R2为未取代或取代的多环一价烃基，选自多环芳烃基如萘基和多环 非芳族烃基如萜烯或樟脑残基。

公开(公告)号：US5925495A

公开(公告)日：1999-07-20

申请号：US924260

申请日：1997-09-05

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03C1/492

CPC分类号： G03F7/091 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photoresist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition comprising an oxime sulfonate acid generating agent. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.

摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基底的光致抗蚀剂层压件上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 以及（c）由抗反酸涂层形成的抗氧化剂层，其特征在于包含肟磺酸生成剂的特定负性化学增感光致抗蚀剂组合物。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

公开(公告)号：US6083665A

公开(公告)日：2000-07-04

申请号：US273262

申请日：1999-03-22

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.

摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

公开(公告)号：US06245930B1

公开(公告)日：2001-06-12

申请号：US09317208

申请日：1999-05-24

申请人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

发明人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC分类号： C07C25500

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formula R1—C(CN)═N—O—SO2—R2, in which R1 is an inert organic group and R2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.

摘要翻译： 提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。 特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂， R 1为惰性有机基团，R2为未取代或取代的选自多环芳烃基如萘基和多环非芳族烃基如萜烯或樟脑残基的多环一价烃基。

公开(公告)号：US06268108B1

公开(公告)日：2001-07-31

申请号：US09116460

申请日：1998-07-16

申请人： Etsuko Iguchi ,  Masakazu Kobayashi ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Etsuko Iguchi ,  Masakazu Kobayashi ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： G03F7004

CPC分类号： G03F7/091

摘要： The present invention provides a composition for forming an antireflective coating film which is not liable to intermixing between the resist composition layer and the antireflective coating layer and a method for forming a resist pattern having an excellent dimensional accuracy and section shape. The composition consists of (A) a compound which produces an acid upon irradiation with actinic rays, (B) a compound which undergoes crosslinking reaction in the presence of an acid, (C) a dye and (D) an organic solvent. The method for forming a resist pattern comprises applying the composition for forming an antireflective coating film to a semiconductor substrate, drying the composition coated, irradiating the entire surface of the coated material with actinic rays so that it undergoes crosslinking reaction to form an antireflective coating film thereon, applying a resist composition to the antireflective coating film, drying the coated material, and then subjecting the coated material to lithographic processing to form a resist pattern thereon.

摘要翻译： 本发明提供了一种用于形成不易于在抗蚀剂组合物层和抗反射涂层之间混合的抗反射涂膜的组合物和形成具有优异的尺寸精度和截面形状的抗蚀剂图案的方法。 组合物由（A）在光化射线照射时产生酸的化合物，（B）在酸存在下进行交联反应的化合物，（C）染料和（D）有机溶剂。 形成抗蚀剂图案的方法包括将用于形成抗反射涂膜的组合物施加到半导体衬底上，干燥涂覆的组合物，用光化射线照射涂覆材料的整个表面，使其经历交联反应以形成抗反射涂膜 在其上涂布抗蚀剂组合物到抗反射涂膜上，干燥涂覆的材料，然后对涂覆材料进行光刻处理以在其上形成抗蚀剂图案。

公开(公告)号：US5929271A

公开(公告)日：1999-07-27

申请号：US912123

申请日：1997-08-15

申请人： Hideo Hada ,  Kazufumi Sato ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Hideo Hada ,  Kazufumi Sato ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： C07C69/013 ,  G03F7/004 ,  G03F7/039 ,  C07C69/74

CPC分类号： C07C69/013 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/115 ,  Y10S430/122

摘要： Proposed is novel compounds for use in a chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which causes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo�3.1.1!heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.

摘要翻译： 提出了用于制造精细电子器件的光刻图案化方法中使用的化学增感正性光致抗蚀剂组合物中的新化合物，其能够赋予ArF准分子激光束具有高光敏性的图案化抗蚀剂层，其具有 具有优异的正交横截面轮廓和高耐干腐蚀性，并且对基材表面表现出良好的粘合性。 虽然组合物包含（A）通过与酸相互作用引起碱溶解度增加的成膜树脂成分和（B）辐射敏感的酸产生剂，但是本发明的最特征在于使用 作为组分（A）的特定丙烯酸树脂，其包含未被取代或被烷基如羟基酮（甲基）丙烯酸酯取代的羟基双环[3.1.1]庚酮的（甲基）丙烯酸酯的单体单元， 与来自（甲基）丙烯酸和/或（甲基）丙烯酸叔丁酯的单体单元组合，摩尔分数为3:7至7:3。

公开(公告)号：US5800964A

公开(公告)日：1998-09-01

申请号：US717779

申请日：1996-09-24

申请人： Mitsuru Sato ,  Kazuyuki Nitta ,  Hideo Hada ,  Tatsuya Hashiguchi ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Kazuyuki Nitta ,  Hideo Hada ,  Tatsuya Hashiguchi ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Disclosed is a novel and improved photoresist composition which comprises: (A) a film-forming resinous compound which is, in the presence of an acid, subject to a change in the solubility in an alkaline solution; and (B) an acid-generating agent capable of releasing an acid by the exposure to actinic rays which is an oxime sulfonate compound represented by the general formula NC--CR.sup.1 .dbd.N--O--SO.sub.2 --R.sup.2, in which R.sup.1 and R.sup.2 are, each independently from the other, an unsubstituted or halogen-substituted monovalent aliphatic hydrocarbon group, e.g., alkyl, cycloalkyl, alkenyl and cycloalkenyl groups. By virtue of the non-aromatic nature of the component (B) as well as good solubility thereof in organic solvents and high acid strength of the acid released therefrom, the composition is highly transparent to deep ultraviolet light even when the content of the component (B) is relatively large and the photosensitivity of the composition is very high so that the photoresist composition is capable of giving a patterned resist layer having excellent characteristics.

摘要翻译： 公开了一种新颖且改进的光致抗蚀剂组合物，其包含：（A）在酸存在下，在碱溶液中溶解度变化的成膜树脂化合物; 和（B）能够通过暴露于由通式NC-CR1 = NO-SO2-R2表示的肟磺酸盐化合物的光化射线释放酸的酸产生剂，其中R 1和R 2各自独立地为 另一个，未取代或卤素取代的一价脂族烃基，例如烷基，环烷基，烯基和环烯基。 由于组分（B）的非芳香性质以及其在有机溶剂中的良好溶解性和从其释放的酸的高酸强度，组合物对于深紫外光是高度透明的，即使组分（ B）相对较大并且组合物的光敏性非常高，使得光致抗蚀剂组合物能够提供具有优异特性的图案化抗蚀剂层。

公开(公告)号：US06136505A

公开(公告)日：2000-10-24

申请号：US330001

申请日：1999-06-11

申请人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/091

摘要： Disclosed herein is a liquid coating composition for use in forming an antireflective film comprising a mixture of a cyclic perfluoroalkyl polyether and a chain perfluoroalkyl polyether in a ratio of from 3:10 to 10:1 by weight, and a fluorocarbon organic solvent. Disclosed also herein is a photoresist material consisting of a photoresist layer and said antireflective film formed thereon using said liquid coating composition. The antireflective film remarkably reduces the standing-wave effect especially in the case where the photoresist layer of chemically amplified type is used. The antireflective film also has good film quality and film removability.

摘要翻译： 本文公开了一种用于形成抗反射膜的液体涂料组合物，其包含按重量比计为3:10至10:1的环状全氟烷基聚醚和链全氟烷基聚醚的混合物，以及氟碳有机溶剂。 此处还公开了由光致抗蚀剂层和在其上使用所述液体涂料组合物形成的所述抗反射膜组成的光致抗蚀剂材料。 抗反射膜特别是在使用化学放大型光致抗蚀剂层的情况下，显着地降低了驻波效应。 抗反射膜也具有良好的膜质量和膜去除性。

公开(公告)号：US06329126B1

公开(公告)日：2001-12-11

申请号：US08339340

申请日：1994-11-14

申请人： Hatsuyuki Tanaka ,  Mitsuru Sato ,  Toshimasa Nakayama ,  Hiroshi Komano

发明人： Hatsuyuki Tanaka ,  Mitsuru Sato ,  Toshimasa Nakayama ,  Hiroshi Komano

IPC分类号： G03F732

CPC分类号： G03F7/322

摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.

摘要翻译： 公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层 任何最好的图案。 除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂， 例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。