摘要:
Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要:
Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要:
Proposed is an aqueous developer solution for an alkali-developable photoresist composition which contains, besides a water-soluble organic basic compound such as tetramethyl ammonium hydroxide and an anionic or non-ionic surface active agent as conventional ingredients in the prior art developwer solutions, an inorganic ammonium salt such as ammonium sulfate, ammonium phosphates and ammonium borates in a limited amount. By virtue of this unique additive, the developer solution is advantageous in respect of the absence of any scums on the patterned resist layer obtained by the development treatment therewith as well as quite good orthogonality in the cross sectional profile of line-patterned resist layer in addition to the greatly improved latitude in the light exposure dose and range of focusing depth in the light-exposure process of the resist layer with ultraviolet light.
摘要:
Disclosed is a novel and improved photoresist composition which comprises: (A) a film-forming resinous compound which is, in the presence of an acid, subject to a change in the solubility in an alkaline solution; and (B) an acid-generating agent capable of releasing an acid by the exposure to actinic rays which is an oxime sulfonate compound represented by the general formula NC--CR.sup.1 .dbd.N--O--SO.sub.2 --R.sup.2, in which R.sup.1 and R.sup.2 are, each independently from the other, an unsubstituted or halogen-substituted monovalent aliphatic hydrocarbon group, e.g., alkyl, cycloalkyl, alkenyl and cycloalkenyl groups. By virtue of the non-aromatic nature of the component (B) as well as good solubility thereof in organic solvents and high acid strength of the acid released therefrom, the composition is highly transparent to deep ultraviolet light even when the content of the component (B) is relatively large and the photosensitivity of the composition is very high so that the photoresist composition is capable of giving a patterned resist layer having excellent characteristics.
摘要:
The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.
摘要:
The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.
摘要:
Proposed is a novel method for the formation of a protective coating film having a pencil hardness of up to 9 H on the surface of various substrates or, in particular, electronic parts such as color filters and liquid crystal display panels. The method comprises: coating the surface with a liquid coating composition of which the principal ingredient is a partial cohydrolysis-condensation product of a tetraalkoxy silane, e.g., tetraethoxy silane, and a functional alkoxy silane, e.g., 3-methacryloxypropyl trimethoxy silane, and drying and heating the coating layer to effect complete curing. The hardness of the cured protective film can be increased by admixing the liquid coating composition with a finely divided inorganic filler such as a colloidal silica. It is optional that the functional alkoxy silane is subjected to the cohydrolysis reaction after it is polymerized alone or after it is copolymerized with a polyfunctional acrylic monomer.
摘要:
The developer solution of the invention is suitable for use to develop a positive-working resist composition comprising an alkali-soluble novolac resin and a naphthoquinone diazide compound and capable of giving a patterned image of the resist layer with a high contrast and increasing the effective depth of focus. The characteristic ingredient in the inventive developer solution is an alkali-soluble organic cyclic nitrogen compound such as N-hydroxyethyl piperazine, N-methyl-4-piperidone, 1,3-dimethyl-2-imidazolidinone and the like added in a specified concentration to a conventional developer solution containing tetramethyl ammonium hydroxide or choline as the water-soluble alkaline compound.
摘要:
Although the positive-working photoresist composition comprises a phenolic novolac resin as the film-forming component and a known photosensitizing compound as in conventional compositions, the novolac resin is prepared from a specific mixture of two classes of phenolic compounds including, one, phenol, cresols and/or resorcinol and, the other, one or more of the phenolic compounds having a nucleus-substituting group selected from allyloxy, allyloxymethyl, allyl dimethyl silyl, 2-(allyl dimethyl silyl) ethoxy, cinnamoyl, acryloyl and methacryloyl groups. By virtue of this unique combination to give the phenolic moiety in the novolac resin, the photoresist composition has markedly improved heat resistance as well as stability against plasma in dry etching so that the composition can give a patterned photoresist layer with extreme fineness having high fidelity to the mask pattern.
摘要:
A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.