公开(公告)号：US08216763B2

公开(公告)日：2012-07-10

申请号：US12092701

申请日：2006-10-10

Applicant: Kazufumi Sato ,  Yasushi Fujii ,  Hisanobu Harada ,  Koji Yonemura ,  Isamu Takagi ,  Daisuke Kawana ,  Tomotaka Yamada ,  Toshikazu Takayama

Inventor： Kazufumi Sato ,  Yasushi Fujii ,  Hisanobu Harada ,  Koji Yonemura ,  Isamu Takagi ,  Daisuke Kawana ,  Tomotaka Yamada ,  Toshikazu Takayama

IPC: G03F7/004 ,  G03F7/30

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0757

Abstract: A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.

Abstract translation: 具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。 抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有特定的锍化合物代替含氮化合物作为猝灭剂。

公开(公告)号：US07666569B2

公开(公告)日：2010-02-23

申请号：US10540056

申请日：2003-12-18

Applicant: Kazufumi Sato ,  Mitsuo Hagihara ,  Daisuke Kawana

Inventor： Kazufumi Sato ,  Mitsuo Hagihara ,  Daisuke Kawana

IPC: G03F7/004

CPC classification number: G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

Abstract: A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.

Abstract translation: 一种正型抗蚀剂组合物，其包含在酸的作用下碱溶解度增加的酸解离溶解抑制基团和在曝光时产生酸的酸产生剂组分（B）的树脂组分（A），其中树脂组分（A）是共聚物 包含衍生自羟基苯乙烯的第一结构单元（a1）和衍生自含有醇羟基的（甲基）丙烯酸酯的第二结构单元（a2），其中10摩尔％以上且25摩尔％以下的组合 结构单元（a1）中的羟基和结构单元（a2）中的醇羟基的总数被酸解离溶解抑制基团保护，并且在用酸解离溶解抑制之前保护共聚物的重均分子量 组别为2,000以上至8,500以下。

公开(公告)号：US20090311625A1

公开(公告)日：2009-12-17

申请号：US12461807

申请日：2009-08-25

Applicant: Akiyoshi Yamazaki ,  Naoto Motoike ,  Daisuke Kawana ,  Kazufumi Sato

Inventor： Akiyoshi Yamazaki ,  Naoto Motoike ,  Daisuke Kawana ,  Kazufumi Sato

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/091

Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.

Abstract translation: 用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。 该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度 化合物在抗反射膜中。

公开(公告)号：US06890697B2

公开(公告)日：2005-05-10

申请号：US10059373

申请日：2002-01-31

Applicant: Katsumi Oomori ,  Hiroto Yukawa ,  Ryusuke Uchida ,  Kazufumi Sato

Inventor： Katsumi Oomori ,  Hiroto Yukawa ,  Ryusuke Uchida ,  Kazufumi Sato

IPC: C08F212/14 ,  C08K5/42 ,  C08L25/18 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C1/73 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract translation: 公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。 光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟代烷基磺酸根离子作为阴离子的鎓盐，例如双（4-叔丁基苯基）碘鎓 九氟丁烷磺酸盐。

公开(公告)号：US06638684B2

公开(公告)日：2003-10-28

申请号：US09799549

申请日：2001-03-07

Applicant: Waki Okubo ,  Kazufumi Sato ,  Kazuyuki Nitta ,  Toshiyuki Ogata

Inventor： Waki Okubo ,  Kazufumi Sato ,  Kazuyuki Nitta ,  Toshiyuki Ogata

IPC: G03F7039

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111

Abstract: A photosensitive laminate includes a substrate and a resist layer 500 to 5800 angstroms thick formed on the substrate. A composition for the resist layer includes (A) a compound which generates an acid upon irradiation with radioactive ray, (B) an alkali-soluble novolak resin, and (C) a compound having at least one acid-decomposable dissolution-inhibiting group, and the dissolution-inhibiting group is decomposable by action of an acid generated from the ingredient (A) to yield an organic carboxylic acid. This photosensitive laminate is sequentially subjected to selective exposure to KrF excimer laser light or to light having a short wavelength equal to or less than that of F2 laser, post-exposure baking, and developing with an alkali to yield a resist pattern.

Abstract translation: 感光层压板包括基材和形成在基材上的500至5800埃的抗蚀剂层。 抗蚀层的组合物包括（A）在放射线照射时产生酸的化合物，（B）碱溶性酚醛清漆树脂，（C）具有至少一个可酸分解溶解抑制基团的化合物， 并且溶解抑制基团可以通过由成分（A）产生的酸的作用而分解，得到有机羧酸。 依次对该感光性层叠体进行KrF准分子激光的选择性曝光或者等于或小于F2激光的短波长，曝光后烘烤和用碱显影以产生抗蚀剂图案的光。

公开(公告)号：US06444394B1

公开(公告)日：2002-09-03

申请号：US09521205

申请日：2000-03-08

Applicant: Kazufumi Sato ,  Satoshi Maemori ,  Taku Nakao ,  Kazuyuki Nitta

Inventor： Kazufumi Sato ,  Satoshi Maemori ,  Taku Nakao ,  Kazuyuki Nitta

IPC: G03F7039

CPC classification number: G03F7/0392 ,  Y10S430/106

Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which a combination of a first resin of which from 30 to 60% the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin a weight proportion of 1.9 to 9:1.

Abstract translation: 公开了一种新颖的化学放大正性光致抗蚀剂组合物，其能够赋予具有优异性能的图案化抗蚀剂层，例如图案化抗蚀剂层的光敏性，图案分辨率，耐热性和横截面轮廓。 该组合物的特征在于使用含羟基的树脂成分作为成膜树脂成分，其中第一树脂的30-60％的羟基被酸解离的溶解性降低基团取代 其中5〜20％的羟基被第一树脂中相同种类的酸解离基取代的第二树脂的重量比为1.9-9:1。

公开(公告)号：US06225476B1

公开(公告)日：2001-05-01

申请号：US09542952

申请日：2000-04-04

Applicant: Hideo Hada ,  Kazufumi Sato ,  Hiroshi Komano

Inventor： Hideo Hada ,  Kazufumi Sato ,  Hiroshi Komano

IPC: C07D30733

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

Abstract: Provided by the invention is a chemical-amplification positive-working photoresist composition used in the fine photolithographic patterning in the manufacturing process of semiconductor devices, which is suitable for the patterning light exposure with ArF excimer laser beams of very short wavelength by virtue of absence of aromatic structure in the ingredients of the composition. The composition comprises, as the film-forming resinous ingredient, an acrylic resin having unique monomeric units represented by the general formula &Brketopenst;CH2—CR1(—CO—O—CR2R3R4)&Brketclosest;, in which R1 is a hydrogen atom or a methyl group, R2 and R3 are each, independently from the other, an alkyl group having 1 to 4 carbon atoms and R4 is an alkoxycarbonyl group or a group derived from a molecule of a lactone compound or ketone compound by removing a hydrogen atom bonded to the carbon atom.

Abstract translation: 本发明提供的是在半导体器件的制造过程中用于精细光刻图案化的化学放大正性光致抗蚀剂组合物，其适用于通过不存在非常短的波长的ArF准分子激光束来图案化曝光 芳香结构在组成成分中。 该组合物包含作为成膜树脂成分的丙烯酸树脂，其具有由通式为R 1为氢原子或甲基的单体单元表示的独特单体单元，R 2和R 3各自独立地为具有 通过除去与碳原子键合的氢原子，R4是烷氧基羰基或衍生自内酯化合物或酮化合物的分子的基团。

公开(公告)号：US5736296A

公开(公告)日：1998-04-07

申请号：US625931

申请日：1996-04-01

Applicant: Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

Inventor： Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC: G03F7/004 ,  G03F7/039

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/106

Abstract: Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms; and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.

Abstract translation: 公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。 该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B） 酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代 式（I）：其中R 1表示氢原子或甲基，R 2表示甲基或乙基，R 3表示碳原子数1〜4的低级烷基。 和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。 该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于 底物。 该组合物可用于在制造超LSI时形成精细图案。

公开(公告)号：US5483132A

公开(公告)日：1996-01-09

申请号：US133638

申请日：1993-10-07

Applicant: Koji Arata ,  Kazufumi Sato ,  Yuji Maeda

Inventor： Koji Arata ,  Kazufumi Sato ,  Yuji Maeda

IPC: H01Q1/22 ,  H01Q1/10 ,  H02P1/22

CPC classification number: H01Q1/103 ,  Y10S388/912

Abstract: A control device for an electrically driven telescopic antenna including: a counting signal extracting circuit which detects the altered waveform of an rectified current generated during the forward or reverse rotation of a DC motor so as to extract counting signals; a command device which sends a control stop command to a motor drive control circuit when the counted value of the extracted counting signals reaches a certain preset value; a motor current monitoring circuit which monitors the current flow to the motor and outputs information on the completion of the antenna element extension/retraction action when the motor current value exceeds a prescribed value; and a correction device which corrects the counted value based upon the information outputted by the motor current monitoring circuit. The control device can include a large-capacitance capacitor for absorbing power supply fluctuations. In addition, a CPU that includes a control stop command device and counted-value correcting device can be controlled by an oscillation circuit which starts functioning when extension/retraction command signals are issued and stops such an operation when the rotational operation of the motor is completed.

Abstract translation: 一种用于电动伸缩天线的控制装置，包括：计数信号提取电路，其检测在直流电动机正向或反向旋转期间产生的整流电流的改变的波形，以便提取计数信号; 当提取的计数信号的计数值达到一定的预设值时，向马达驱动控制电路发送控制停止命令的指令装置; 电动机电流监视电路，当电动机电流值超过规定值时，监视当前流向电动机的电流并输出关于天线元件延伸/收回动作完成的信息; 以及校正装置，其基于由电动机电流监视电路输出的信息来校正计数值。 控制装置可以包括用于吸收电源波动的大容量电容器。 此外，包括控制停止指令装置和计数值校正装置的CPU可以通过在发出延长/缩回命令信号时开始运行的振荡电路来控制，并且当电动机的旋转操作完成时停止这种操作 。

公开(公告)号：US20080227027A1

公开(公告)日：2008-09-18

申请号：US12081463

申请日：2008-04-16

Applicant: Akiyoshi Yamazaki ,  Naoto Motoike ,  Daisuke Kawana ,  Kazufumi Sato

Inventor： Akiyoshi Yamazaki ,  Naoto Motoike ,  Daisuke Kawana ,  Kazufumi Sato

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/091

Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.

Abstract translation: 用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。 该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度 化合物在抗反射膜中。