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1.发明授权Phase-shift mask, manufacturing method thereof and manufacturing method of semiconductor element 失效相移掩模，其制造方法和半导体元件的制造方法公开(公告)号：US07754397B2
公开(公告)日：2010-07-13
申请号：US11812062
申请日：2007-06-14
申请人： Toshio Konishi , Yosuke Kojima , Satoru Nemoto , Jun Sasaki , Keishi Tanaka
发明人： Toshio Konishi , Yosuke Kojima , Satoru Nemoto , Jun Sasaki , Keishi Tanaka
IPC分类号： G03F1/00
摘要： A phase-shift mask including a transparent substrate, and a light-shielding film formed on the transparent substrate and provided with first apertures and second apertures which are alternately arranged. The transparent substrate is partially removed through the second apertures to form a recessed portion having a predetermined depth. Light transmitted through the first apertures and light transmitted through the second apertures are enabled to alternately invert in phase thereof. This phase-shift mask is characterized in that a phase shift of transmitted light is set in conformity with a pitch between an edge of the first aperture and an edge of the second aperture of the light-shielding film.
摘要翻译： 包括透明基板的相移掩模和形成在透明基板上并设置有交替布置的第一孔和第二孔的遮光膜。 通过第二孔部分地去除透明基板，以形成具有预定深度的凹部。 透过第一孔的光使透过第二孔的光能够相位交替反转。 该相移掩模的特征在于，透射光的相移被设定为与第一孔的边缘和遮光膜的第二孔的边缘之间的间距一致。
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2.发明申请Phase-shift mask, manufacturing method thereof and manufacturing method of semiconductor element 失效相移掩模，其制造方法和半导体元件的制造方法公开(公告)号：US20070269726A1
公开(公告)日：2007-11-22
申请号：US11812062
申请日：2007-06-14
申请人： Toshio Konishi , Yosuke Kojima , Satoru Nemoto , Jun Sasaki , Keishi Tanaka
发明人： Toshio Konishi , Yosuke Kojima , Satoru Nemoto , Jun Sasaki , Keishi Tanaka
摘要： A phase-shift mask including a transparent substrate, and a light-shielding film formed on the transparent substrate and provided with first apertures and second apertures which are alternately arranged. The transparent substrate is partially removed through the second apertures to form a recessed portion having a predetermined depth. Light transmitted through the first apertures and light transmitted through the second apertures are enabled to alternately invert in phase thereof. This phase-shift mask is characterized in that a phase shift of transmitted light is set in conformity with a pitch between an edge of the first aperture and an edge of the second aperture of the light-shielding film.
摘要翻译： 包括透明基板的相移掩模和形成在透明基板上并设置有交替布置的第一孔和第二孔的遮光膜。 通过第二孔部分地去除透明基板，以形成具有预定深度的凹部。 透过第一孔的光使透过第二孔的光能够相位交替反转。 该相移掩模的特征在于，透射光的相移被设定为与第一孔的边缘和遮光膜的第二孔的边缘之间的间距一致。
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公开(公告)号：US07632613B2
公开(公告)日：2009-12-15
申请号：US11583797
申请日：2006-10-20
申请人： Yosuke Kojima , Toshio Konishi , Keishi Tanaka , Masao Otaki , Jun Sasaki
发明人： Yosuke Kojima , Toshio Konishi , Keishi Tanaka , Masao Otaki , Jun Sasaki
IPC分类号： G03F1/00
摘要： A Levenson type phase shift mask has a light shielding portion and openings formed on a transparent substrate. The transparent substrate at the openings is partially dug in or a transparent film is partially disposed on the transparent substrate at the openings to form shifter openings and non-shifter openings. The shifter openings and the non-shifter openings repetitively exist in the mask. The shifter openings invert a phase of transmitted light. The Levenson type phase shift mask has a light shielding portions pattern interposed from both sides between the adjacent openings of the same kind. The light shielding portions pattern is subjected to bias correction which expands the light shielding portions pattern to both sides thereof in a predetermined amount with respect to a predetermined design line width set by a design of the mask.
摘要翻译： 莱文森型相移掩模具有形成在透明基板上的遮光部分和开口。 开口处的透明基板被部分地挖出，或者在开口处部分地设置在透明基板上的透明膜，以形成移位开口和非移位开口。 移位器开口和非移位开口在掩模中重复存在。 移位器开口反转透射光的相位。 莱文森型相移掩模具有从相同类型的相邻开口之间的两侧插入的遮光部图案。 对遮光部图案进行偏置校正，使得遮光部图案的两侧相对于由掩模的设计设定的规定的设计线宽度以规定量进行扩展。
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公开(公告)号：US20070037072A1
公开(公告)日：2007-02-15
申请号：US11583797
申请日：2006-10-20
申请人： Yosuke Kojima , Toshio Konishi , Keishi Tanaka , Masao Otaki , Jun Sasaki
发明人： Yosuke Kojima , Toshio Konishi , Keishi Tanaka , Masao Otaki , Jun Sasaki
摘要： A Levenson type phase shift mask has a light shielding portion and openings formed on a transparent substrate. The transparent substrate at the openings is partially dug in or a transparent film is partially disposed on the transparent substrate at the openings to form shifter openings and non-shifter openings. The shifter openings and the non-shifter openings repetitively exist in the mask. The shifter openings invert a phase of transmitted light. The Levenson type phase shift mask has a light shielding portions pattern interposed from both sides between the adjacent openings of the same kind. The light shielding portions pattern is subjected to bias correction which expands the light shielding portions pattern to both sides thereof in a predetermined amount with respect to a predetermined design line width set by a design of the mask.
摘要翻译： 莱文森型相移掩模具有形成在透明基板上的遮光部分和开口。 开口处的透明基板被部分地挖出，或者透明膜部分地设置在开口处的透明基板上，以形成移位开口和非移位开口。 移位器开口和非移位开口在掩模中重复存在。 移位器开口反转透射光的相位。 莱文森型相移掩模具有从相同类型的相邻开口之间的两侧插入的遮光部图案。 对遮光部图形进行偏光校正，使得遮光部图案的两侧相对于由掩模的设计设定的规定的设计线宽度以规定量进行扩展。
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公开(公告)号：US20070212618A1
公开(公告)日：2007-09-13
申请号：US11715346
申请日：2007-03-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由 过渡金属/硅材料和设置在遮光膜上的抗反射膜。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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公开(公告)号：US07989124B2
公开(公告)日：2011-08-02
申请号：US12820908
申请日：2010-06-22
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 光掩模坯料包括透明基板，沉积在基板上并包含易受氟干蚀刻影响的金属或金属化合物的遮光膜，以及沉积在遮光膜上并包含另一金属或金属化合物的蚀刻掩模膜 到氟干蚀刻。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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公开(公告)号：US08913079B2
公开(公告)日：2014-12-16
申请号：US13274948
申请日：2011-10-17
申请人： Yosuke Kojima
发明人： Yosuke Kojima
CPC分类号： G06F3/048 , G09G5/14 , G09G2340/0464
摘要： Apparatus and method capable of extracting a part where information highly necessary for a user is displayed without using information registered in advance. The method includes detecting an operation part in a screen, comparing a first screen and a second screen, determining a priority order of objects in the first and second screens based on a result of the comparing and displaying at least one of the objects in the first and second screens on a display device based on the priority order. The screen is changed to the first screen by first operation of the operation part and the screen is changed to the second screen by a second operation of the operation part.
摘要翻译： 能够提取不需要预先登记的信息的情况下，显示用户所需的信息的部分被显示的装置和方法。 该方法包括检测屏幕中的操作部分，比较第一屏幕和第二屏幕，基于比较和显示第一屏幕和第二屏幕中的至少一个对象的结果，确定第一和第二屏幕中的对象的优先级顺序 和基于优先级顺序的显示设备上的第二屏幕。 通过操作部的第一操作将屏幕改变为第一屏幕，并且通过操作部分的第二操作将屏幕改变为第二屏幕。
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公开(公告)号：US08003284B2
公开(公告)日：2011-08-23
申请号：US12820918
申请日：2010-06-22
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
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公开(公告)号：US20100261100A1
公开(公告)日：2010-10-14
申请号：US12820918
申请日：2010-06-22
申请人： Hiroki YOSHIKAWA , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki YOSHIKAWA , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由 过渡金属/硅材料和设置在遮光膜上的抗反射膜。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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公开(公告)号：US07767367B2
公开(公告)日：2010-08-03
申请号：US11715368
申请日：2007-03-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 光掩模坯料包括透明基板，沉积在基板上并包含易受氟干蚀刻影响的金属或金属化合物的遮光膜，以及沉积在遮光膜上并包含另一金属或金属化合物的蚀刻掩模膜 到氟干蚀刻。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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