-
公开(公告)号:US20100252909A1
公开(公告)日:2010-10-07
申请号:US12754913
申请日:2010-04-06
申请人: Toshiro Nakanishi , Jeonghee Han , Soodoo Chae
发明人: Toshiro Nakanishi , Jeonghee Han , Soodoo Chae
IPC分类号: H01L27/06 , H01L29/92 , H01L29/8605
CPC分类号: H01L27/1021 , G11C13/0004 , G11C2213/71 , H01L27/101
摘要: An integrated circuit memory device may include a semiconductor substrate and a plurality of word-line layers wherein adjacent word-line layers are separated by respective word-line insulating layers. A plurality of active pillars may extend from a surface of the semiconductor substrate through the plurality of word-line layers and insulating layers. Dielectric information storage layers may be provided between the active pillars and the respective word-line layers. Related methods of operation and fabrication are also discussed.
摘要翻译: 集成电路存储器件可以包括半导体衬底和多个字线层,其中相邻的字线层由相应的字线绝缘层分开。 多个活性柱可以从半导体衬底的表面延伸穿过多个字线层和绝缘层。 电介质信息存储层可以设置在活动柱和相应的字线层之间。 还讨论了相关的操作和制造方法。