Three-Dimensional Memory Devices
    1.
    发明申请
    Three-Dimensional Memory Devices 审中-公开
    三维存储器件

    公开(公告)号:US20100252909A1

    公开(公告)日:2010-10-07

    申请号:US12754913

    申请日:2010-04-06

    摘要: An integrated circuit memory device may include a semiconductor substrate and a plurality of word-line layers wherein adjacent word-line layers are separated by respective word-line insulating layers. A plurality of active pillars may extend from a surface of the semiconductor substrate through the plurality of word-line layers and insulating layers. Dielectric information storage layers may be provided between the active pillars and the respective word-line layers. Related methods of operation and fabrication are also discussed.

    摘要翻译: 集成电路存储器件可以包括半导体衬底和多个字线层,其中相邻的字线层由相应的字线绝缘层分开。 多个活性柱可以从半导体衬底的表面延伸穿过多个字线层和绝缘层。 电介质信息存储层可以设置在活动柱和相应的字线层之间。 还讨论了相关的操作和制造方法。