公开(公告)号：US20080308417A1

公开(公告)日：2008-12-18

申请号：US11886436

申请日：2005-03-14

申请人： Toyoaki Hirata ,  Masami Nakasone

发明人： Toyoaki Hirata ,  Masami Nakasone

IPC分类号： C23C14/00

CPC分类号： C23C14/352 ,  H01J37/3405 ,  H01J37/3438 ,  H01J2237/0206

摘要： A sputtering apparatus includes target holders 4a and 4b for mounting targets thereon to constitute a cathode, a substrate holder 30 for holding a substrate 8, and magnets 51a and 51b for generating magnetic fields around the surface of the targets. A voltage is applied to backing plates 42 of the target holders 4a and 4b using a direct-current power supply 6 to generate plasma. An anode is made of an electrically-conductive material that is not molten by the retained, heated plasma with a high density. The anode 9 is connected to the ground electrical potential. At least a portion of the anode 9 is placed in or near the region where plasma is retained. During sputtering, electrons discharged from the target flow to the ground potential through the heated portion of the anode 9 being heated by the plasma, thereby keeping the direct-current power supply circuit closed. This can prevent electric-discharge abnormalities within the chamber with a simple configuration, without using an expensive pulsed power supply or a shielding plate.

摘要翻译： 溅射装置包括用于在其上安装靶以构成阴极的靶保持器4a和4b，用于保持基板8的基板保持件30，以及用于在目标表面周围产生磁场的磁体51a和51b。 使用直流电源6向目标保持器4a和4b的背板42施加电压以产生等离子体。 阳极由导电材料制成，其不被保留的加热的等离子体以高密度熔化。 阳极9连接到接地电位。 阳极9的至少一部分放置在等离子体被保持的区域中或附近。 在溅射期间，通过由等离子体加热阳极9的被加热部分的从靶流出的电子流到接地电位，从而保持直流电源电路闭合。 这可以以简单的配置来防止室内的放电异常，而不使用昂贵的脉冲电源或屏蔽板。