公开(公告)号：US09659733B2

公开(公告)日：2017-05-23

申请号：US14740359

申请日：2015-06-16

Applicant: Tsinghua University

Inventor： Huaqiang Wu ,  Shuoguo Yuan ,  Han Li ,  He Qian

IPC: C23C16/30 ,  H01J1/304 ,  H01J9/02 ,  C23C16/448 ,  C23C16/455

CPC classification number: H01J1/304 ,  C23C16/305 ,  C23C16/4488 ,  C23C16/45523 ,  H01J9/025 ,  H01J2201/30449

Abstract: Method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO3 powder to generate a gaseous MoOx; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoS2 film obtained is good.