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    Copper nanowire production for interconnect applications
    3.
    发明授权
    Copper nanowire production for interconnect applications 有权
    铜纳米线生产用于互连应用

    公开(公告)号：US08834597B1

    公开(公告)日：2014-09-16

    申请号：US13485721

    申请日：2012-05-31

    Applicant: Jin-Woo Han ,  Meyya Meyyappan

    Inventor： Jin-Woo Han ,  Meyya Meyyappan

    IPC: C22B15/00 ,  B82Y10/00 ,  H01J1/00 ,  H01J1/304

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/3043 ,  H01J2201/30449

    Abstract: A method of fabricating metallic Cu nanowires with lengths up to about 25 μm and diameters in a range 20-100 nm, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 μm), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nm. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

    Abstract translation: 如果需要，制造长度大约25μm，直径在20-100nm范围内的金属Cu纳米线的方法或更高。 垂直取向或侧向取向的氧化铜结构（CuO和/或Cu2O）在Cu衬底上生长。 氧化铜结构以99％以上的H或H 2还原，在该还原过程中，长度减小（不大于约25μm），衬底上存活的纳米结构的密度降低，并且存活的纳米结构的直径 约20-100nm的范围。 所得的纳米线基本上是纯Cu，并且可以横向（用于局部或全局互连）或者可以垂直取向（对于标准垂直互连）。

    Electron emission device comprising carbon nanotubes yarn and method for generating emission current
    4.
    发明授权
    Electron emission device comprising carbon nanotubes yarn and method for generating emission current 有权
    包含碳纳米管纱线的电子发射装置和产生发射电流的方法

    公开(公告)号：US07638933B2

    公开(公告)日：2009-12-29

    申请号：US11478406

    申请日：2006-06-28

    Applicant: Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

    Inventor： Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

    IPC: H01J13/08 ,  H01J19/06 ,  H01J19/30 ,  H01K1/04

    CPC classification number: H01J1/14 ,  H01J1/15 ,  H01J1/20 ,  H01J1/304 ,  H01J2201/19 ,  H01J2201/196 ,  H01J2201/30449 ,  H01J2201/30469 ,  H01J2201/30496

    Abstract: An exemplary electron emission device includes an electron emitter, an anode opposite to and spaced apart from the electron emitter, a first power supply circuit, and a second power supply circuit. The first power supply circuit is configured for electrically connecting the electron emitter and the anode with a power supply to generate an electric field between the electron emitter and the anode. The second power supply circuit is configured for electrically connecting the electron emitter with a power supply to supply a heating current for heating the electron emitter whereby electrons emit therefrom. Methods for generating an emission current with a relatively higher stability also are provided.

    Abstract translation: 示例性的电子发射装置包括电子发射极，与电子发射极相对且间隔开的阳极，第一电源电路和第二电源电路。 第一电源电路被配置为用电源电连接电子发射器和阳极，以在电子发射器和阳极之间产生电场。 第二电源电路被配置为将电子发射器与电源电连接以提供用于加热电子发射器的加热电流，从而电子从其发射。 还提供了用于产生具有相对较高稳定性的发射电流的方法。

    Nitrogen-mediated manufacturing method of transition metal-carbon nanotube hybrid materials
    8.
    发明申请
    Nitrogen-mediated manufacturing method of transition metal-carbon nanotube hybrid materials 有权
    过渡金属 - 碳纳米管混合材料的氮介导制造方法

    公开(公告)号：US20080102015A1

    公开(公告)日：2008-05-01

    申请号：US11878155

    申请日：2007-07-20

    Applicant: Jeung-Ku Kang ,  Seong-Ho Yang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Se-Yun Kim ,  Jung-Woo Lee ,  Weon-Ho Shin ,  Jun-Hyeon Bae

    Inventor： Jeung-Ku Kang ,  Seong-Ho Yang ,  Hyun-Seok Kim ,  Kyu-Sung Han ,  Se-Yun Kim ,  Jung-Woo Lee ,  Weon-Ho Shin ,  Jun-Hyeon Bae

    IPC: C01B21/00

    CPC classification number: B82Y40/00 ,  B01J21/185 ,  B01J23/75 ,  B01J23/755 ,  B01J37/0203 ,  B01J37/16 ,  B82Y30/00 ,  C01B3/0021 ,  C01B32/162 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30449 ,  H01J2201/30469 ,  Y02E60/325

    Abstract: The present invention relates to a method for manufacturing a transition metal-carbon nanotube hybrid material using nitrogen as a medium. The present invention is characterized in that nitrogen-added carbon nanotube is grown in the presence of metal catalyst particles by reacting an hydrocarbon gas with a nitrogen gas by a chemical vapor deposition (CVD) and a transition metal-carbon nanotube hybrid material where a transition metal is uniformly attached to the entire carbon nanotube structure in which nitrogen with a great chemical reactivity is added as heterogeneous elements is chemically manufactured. Therefore, the present invention does not use an acid treatment required to attach transition-metal atoms to the carbon-nanotube, a surface treating process using a surfactant and the like and an inhibitor for preventing the coagulation of the transition metal so that a simplification of the process is obtained and the method is an environment-friendly method. The transition metal-carbon nanotube hybrid material manufactured by the above can be applied variously as a hydrogen storage material, a catalyst material, an electric field emission device and an electrode material.

    Abstract translation: 本发明涉及使用氮作为介质制造过渡金属 - 碳纳米管混合材料的方法。 本发明的特征在于，通过化学气相沉积（CVD）和过渡金属 - 碳纳米管混合材料使碳氢化合物气体与氮气反应，在金属催化剂颗粒的存在下生长氮添加碳纳米管，其中过渡 金属均匀地附着在整个碳纳米管结构上，其中加入具有大的化学反应性的氮作为异质元素是化学制造的。 因此，本发明不使用将过渡金属原子附着在碳纳米管上所需的酸处理，使用表面活性剂等的表面处理方法和防止过渡金属凝结的抑制剂， 获得该过程，并且该方法是环境友好的方法。 由上述制造的过渡金属 - 碳纳米管混合材料可以用作储氢材料，催化剂材料，电场发射装置和电极材料。

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