公开(公告)号：US10804465B2

公开(公告)日：2020-10-13

申请号：US16123234

申请日：2018-09-06

Applicant: Tsinghua University

Inventor： Huaqiang Wu ,  Wei Wu ,  Bin Gao ,  He Qian

IPC: H01L45/00

Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.

公开(公告)号：US11355704B2

公开(公告)日：2022-06-07

申请号：US17037039

申请日：2020-09-29

Applicant: Tsinghua University

Inventor： Huaqiang Wu ,  Wei Wu ,  Bin Gao ,  He Qian

IPC: H01L45/00

Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.

公开(公告)号：US20210028358A1

公开(公告)日：2021-01-28

申请号：US17037039

申请日：2020-09-29

Applicant: Tsinghua University

Inventor： Huaqiang Wu ,  Wei Wu ,  Bin Gao ,  He Qian

IPC: H01L45/00

Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.

公开(公告)号：US09200306B2

公开(公告)日：2015-12-01

申请号：US13836817

申请日：2013-03-15

Applicant: TSINGHUA UNIVERSITY

Inventor： Zhanglin Lin ,  Wanghui Xu ,  Lei Xing ,  Lingli Zeng ,  Bihong Zhou ,  Qing Zhao ,  Wei Wu

IPC: C12P21/06 ,  C12N1/00 ,  C07K14/00 ,  C07K14/575 ,  C07K14/605

CPC classification number: C12P21/06 ,  C07K14/00 ,  C07K14/57581 ,  C07K14/605 ,  C07K2319/01 ,  C07K2319/50 ,  C07K2319/70 ,  C12N1/00

Abstract: The present invention relates to a method for production and purification of polypeptides. In particular, the present invention relates to a fusion protein comprising a solubility-enhancing peptide tag moiety, a self-aggregating peptide moiety and a moiety of target peptide and to a method for production and purification of target peptides through expressing said fusion protein.

Abstract translation: 本发明涉及多肽的制备和纯化方法。 特别地，本发明涉及包含溶解度增强肽标签部分，自聚集肽部分和靶肽部分的融合蛋白，以及通过表达所述融合蛋白产生和纯化靶肽的方法。

公开(公告)号：US20190074435A1

公开(公告)日：2019-03-07

申请号：US16123234

申请日：2018-09-06

Applicant: Tsinghua University

Inventor： Huaqiang Wu ,  Wei Wu ,  Bin Gao ,  He Qian

IPC: H01L45/00

CPC classification number: H01L45/128 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1675

Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.