公开(公告)号：US08089798B2

公开(公告)日：2012-01-03

申请号：US12627244

申请日：2009-11-30

申请人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

发明人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

IPC分类号： G11C17/00

CPC分类号： H01L27/112 ,  G11C17/16 ,  G11C17/18 ,  H01L27/11206

摘要： A method for operating a one-time programmable read-only memory (OTP-ROM) is provided. The OTP-ROM comprises a first gate and a second gate respectively disposed on a gate dielectric layer between a first doped region and a second doped region on a substrate, wherein the first gate is adjacent to the first doped region and coupled to the first doped region, the second gate is adjacent to the second doped region, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. The method comprises a step of programming the OTP-ROM under the conditions that a voltage of the second doped region is higher than a voltage of the first doped region, the voltage of the second gate is higher than a threshold voltage to pass the voltage of the second doped region, and the first doped region and the substrate are at a reference voltage.

摘要翻译： 提供了一种用于操作一次性可编程只读存储器（OTP-ROM）的方法。 OTP-ROM包括分别设置在衬底上的第一掺杂区域和第二掺杂区域之间的栅极电介质层上的第一栅极和第二栅极，其中第一栅极与第一掺杂区域相邻并耦合到第一掺杂区域 所述第二栅极与所述第二掺杂区相邻，所述第一栅极电耦合接地，并且通过击穿效应对所述OTP-ROM进行编程。 该方法包括在第二掺杂区域的电压高于第一掺杂区域的电压的条件下对OTP-ROM进行编程的步骤，第二栅极的电压高于阈值电压以通过 第二掺杂区域和第一掺杂区域和衬底处于参考电压。

公开(公告)号：US20100073985A1

公开(公告)日：2010-03-25

申请号：US12627244

申请日：2009-11-30

申请人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

发明人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

IPC分类号： G11C17/08

CPC分类号： H01L27/112 ,  G11C17/16 ,  G11C17/18 ,  H01L27/11206

摘要： A method for operating a one-time programmable read-only memory (OTP-ROM) is provided. The OTP-ROM comprises a first gate and a second gate respectively disposed on a gate dielectric layer between a first doped region and a second doped region on a substrate, wherein the first gate is adjacent to the first doped region and coupled to the first doped region, the second gate is adjacent to the second doped region, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. The method comprises a step of programming the OTP-ROM under the conditions that a voltage of the second doped region is higher than a voltage of the first doped region, the voltage of the second gate is higher than a threshold voltage to pass the voltage of the second doped region, and the first doped region and the substrate are at a reference voltage.

摘要翻译： 提供了一种用于操作一次性可编程只读存储器（OTP-ROM）的方法。 OTP-ROM包括分别设置在衬底上的第一掺杂区域和第二掺杂区域之间的栅极电介质层上的第一栅极和第二栅极，其中第一栅极与第一掺杂区域相邻并耦合到第一掺杂区域 所述第二栅极与所述第二掺杂区相邻，所述第一栅极电耦合接地，并且通过击穿效应对所述OTP-ROM进行编程。 该方法包括在第二掺杂区域的电压高于第一掺杂区域的电压的条件下对OTP-ROM进行编程的步骤，第二栅极的电压高于阈值电压以通过 第二掺杂区域和第一掺杂区域和衬底处于参考电压。

公开(公告)号：US20080296701A1

公开(公告)日：2008-12-04

申请号：US11956633

申请日：2007-12-14

申请人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

发明人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

IPC分类号： H01L27/112

CPC分类号： H01L27/112 ,  G11C17/16 ,  G11C17/18 ,  H01L27/11206

摘要： A one-time programmable read-only memory (OTP-ROM) including a substrate, a first doped region, a second doped region, a gate dielectric layer, a first gate and a second gate. The substrate is of a first conductive type. The first doped region and the second doped region are of a second conductive type and are separately disposed in the substrate. The gate dielectric layer is disposed on the substrate between the first doped region and the second doped region. The first gate and the second gate are disposed on the gate dielectric layer, respectively. The first gate is adjacent to the first doped region, while the second gate is adjacent to the second doped region. Here, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect.

摘要翻译： 一种包括衬底，第一掺杂区域，第二掺杂区域，栅极电介质层，第一栅极和第二栅极的可编程只读存储器（OTP-ROM）。 衬底是第一导电类型。 第一掺杂区域和第二掺杂区域是第二导电类型，并且分别设置在衬底中。 栅电介质层设置在第一掺杂区和第二掺杂区之间的衬底上。 第一栅极和第二栅极分别设置在栅极介电层上。 第一栅极与第一掺杂区相邻，而第二栅极与第二掺杂区相邻。 这里，第一个栅极电耦合接地，OTP-ROM通过击穿效应进行编程。