公开(公告)号：US06755945B2

公开(公告)日：2004-06-29

申请号：US10138049

申请日：2002-05-03

申请人： Tugrul Yasar ,  Glyn Reynolds ,  Frank Cerio ,  Bruce Gittleman ,  Michael Grapperhaus ,  Rodney Robison

发明人： Tugrul Yasar ,  Glyn Reynolds ,  Frank Cerio ,  Bruce Gittleman ,  Michael Grapperhaus ,  Rodney Robison

IPC分类号： C23C1434

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An iPVD apparatus (20) is programmed to deposit material (10) into high aspect ratio submicron features (11) on semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms (15) of the features, and resputters the removed deposited material onto sidewalls (16) of the features. The substrate (21) is cooled during deposition and etching, and particularly during etching to substantially below 0° C. RF energy is coupled into the chamber (30) to form a high density plasma, with substantially higher RF power coupled during deposition than during etching. The substrate (21) is moved closer to the plasma source during etching than during deposition.

摘要翻译： iPVD装置（20）被编程为通过在真空室（30）内的沉积和蚀刻模式之间循环来将材料（10）沉积到半导体衬底（21）上的高纵横比亚微米特征（11）中。 这些模式在不同的功率和压力参数下工作。 例如，使用超过50mTorr的压力用于从目标溅射材料，例如使用小于几mTorr的压力来蚀刻。 衬底上的偏置功率对于蚀刻而言高出一个数量级，产生几百伏的蚀刻偏压，但只有几十伏的电压用于沉积。 交替的蚀刻模式去除沉积在衬底上的特征边缘的沉积材料，从特征的底部（15）去除一些沉积的材料，并将去除的沉积材料重新计算到特征的侧壁（16）上。 衬底（21）在沉积和蚀刻期间被冷却，特别是在蚀刻期间基本上低于0℃.RF能耦合到腔室（30）中以形成高密度等离子体，在沉积期间具有比在 蚀刻。 在蚀刻期间，衬底（21）比沉积期间更靠近等离子体源。

公开(公告)号：US06652711B2

公开(公告)日：2003-11-25

申请号：US09875339

申请日：2001-06-06

申请人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

发明人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

IPC分类号： C23F100

CPC分类号： H01J37/3244 ,  H01J37/321

摘要： A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

公开(公告)号：US06417626B1

公开(公告)日：2002-07-09

申请号：US09796971

申请日：2001-03-01

申请人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

发明人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

IPC分类号： H01J724

CPC分类号： H01J37/321

摘要： A plasma processing system having a plasma source that efficiently couple radiofrequency energy to a plasma within a vacuum processing space of a vacuum chamber. The plasma source comprises a dielectric trough, an inductive element, and a pair of slotted deposition shields. A chamber wall of the vacuum chamber includes an annular opening that receives the dielectric trough. The trough projects into the vacuum processing space to immerse the inductive element within the plasma. The spatial distribution of the RF energy inductively coupled from the inductive element to the plasma may be tailored by altering the slots in the slotted deposition shields, the configuration of the inductive element, and the thickness or geometry of the trough. The efficient inductive coupling of radiofrequency energy is particularly effective for creating a spatially-uniform large-area plasma for the processing of large-area substrates.

摘要翻译： 一种等离子体处理系统，其具有在真空室的真空处理空间内有效地将射频能量耦合到等离子体的等离子体源。 等离子体源包括电介质槽，电感元件和一对开槽沉积屏蔽。 真空室的室壁包括接收电介质槽的环形开口。 槽进入真空处理空间以将电感元件浸入等离子体内。 从电感元件感应耦合到等离子体的RF能量的空间分布可以通过改变开槽的沉积屏蔽中的槽，电感元件的构造以及槽的厚度或几何形状来调整。 射频能量的高效感应耦合对于产生空间均匀的大面积等离子体来处理大面积衬底特别有效。

公开(公告)号：US20070242372A1

公开(公告)日：2007-10-18

申请号：US11379028

申请日：2006-04-17

申请人： Raymond Schaefer ,  Michael Grapperhaus ,  John Gallagher

发明人： Raymond Schaefer ,  Michael Grapperhaus ,  John Gallagher

IPC分类号： G02B5/08

CPC分类号： G02B5/10 ,  B44D3/166

摘要： A reflector employs materials and design features that can transfer both light and sound emission simultaneously, from sources to planes or volumes, in an efficient and controlled manner. Compound orthogonal parabolic reflectors employ an extension onto conventional orthogonal parabolic reflectors to efficiently deliver light and/or sound to a focal volume or surface. The extension shapes the output, and can provide inflow and outflow to the focal region, along with a brush. Pulsed sources may be employed, which may emit light, sound or both light and sound, may erode and may be wire initiated with the wire replaced after each pulse by a wire feed.

摘要翻译： 反射器采用材料和设计特征，可以以有效和可控的方式同时从光源到平面或体积传输光和声发射。 复合正交抛物面反射器使用常规正交抛物面反射器上的延伸，以有效地将光和/或声音传递到焦点体积或表面。 延伸部形成输出，并且可以与刷子一起向聚焦区域提供流入和流出。 可以使用可以发光，声音或光和声两者的脉冲源，其可能被侵蚀，并且可以在每个脉冲之后用导线进行替换的线引导。

公开(公告)号：US20130033968A1

公开(公告)日：2013-02-07

申请号：US13515453

申请日：2010-12-15

申请人： Raymond B. Schaefer ,  Michael Grapperhaus ,  John Gallagher ,  Robin O. Cleveland

发明人： Raymond B. Schaefer ,  Michael Grapperhaus ,  John Gallagher ,  Robin O. Cleveland

IPC分类号： A61B18/26 ,  A61N5/00

CPC分类号： A61B17/225 ,  A61B2018/1807 ,  A61N2005/0642 ,  A61N2005/0654 ,  A61N2005/0665 ,  A61N2007/0069 ,  A61N2007/0078

摘要： A sparker array includes a plurality of sparker sources of sound and light emissions, the plurality of sparker sources arranged in a geometric pattern with respect to a region, the array configured to deliver a maximal acoustic output to the region. Sparker sources may include reflectors. A single electrical source to drive a sparker array may be employed. A sparker system may include two or more sparker arrays. A time delay may be employed to trigger electrical circuits of the sparker arrays. Sparker arrays may be used to deliver shock waves with increased operational life, consistency and efficacy for specific applications.

摘要翻译： 火花塞阵列包括多个发光源的声光发射，所述多个火花源相对于一个区域以几何图形排列，所述阵列被配置为将最大的声输出传送到该区域。 火花源可能包括反射镜。 可以采用驱动火花塞阵列的单个电源。 火花塞系统可以包括两个或更多个火花塞阵列。 可以采用时间延迟来触发火花塞阵列的电路。 Sparker阵列可用于为特定应用提供具有更高使用寿命，一致性和功效的冲击波。

公开(公告)号：US20060259198A1

公开(公告)日：2006-11-16

申请号：US11441050

申请日：2006-05-26

申请人： Jozef Brcka ,  Deana Delp ,  Michael Grapperhaus ,  Paul Moroz

发明人： Jozef Brcka ,  Deana Delp ,  Michael Grapperhaus ,  Paul Moroz

IPC分类号： G05B19/04

CPC分类号： G05B23/0254 ,  G05B19/4184 ,  G05B2219/24019 ,  G05B2219/31357 ,  G05B2219/32234 ,  G05B2219/33296 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  Y02P90/26 ,  Y02P90/86

摘要： Embodiments of an intelligent modeling method and system monitor and perform analysis of semiconductor processing equipment as well as predict future states of that equipment based on the analysis, predict failures of the semiconductor processing equipment and/or determine equipment maintenance schedules.

摘要翻译： 智能建模方法和系统的实施例基于分析，预测半导体处理设备的故障和/或确定设备维护计划来监测和执行半导体处理设备的分析以及预测该设备的未来状态。

公开(公告)号：US07593289B2

公开(公告)日：2009-09-22

申请号：US11379028

申请日：2006-04-17

申请人： Raymond B. Schaefer ,  Michael Grapperhaus ,  John Gallagher

发明人： Raymond B. Schaefer ,  Michael Grapperhaus ,  John Gallagher

IPC分类号： G02B5/08

CPC分类号： G02B5/10 ,  B44D3/166

摘要： A reflector employs materials and design features that can transfer both light and sound emission simultaneously, from sources to planes or volumes, in an efficient and controlled manner. Compound orthogonal parabolic reflectors employ an extension onto conventional orthogonal parabolic reflectors to efficiently deliver light and/or sound to a focal volume or surface. The extension shapes the output, and can provide inflow and outflow to the focal region, along with a brush. Pulsed sources may be employed, which may emit light, sound or both light and sound, may erode and may be wire initiated with the wire replaced after each pulse by a wire feed.

摘要翻译： 反射器采用材料和设计特征，可以以有效和可控的方式同时从光源到平面或体积传输光和声发射。 复合正交抛物面反射器使用常规正交抛物面反射器上的延伸，以有效地将光和/或声音传递到焦点体积或表面。 延伸部形成输出，并且可以与刷子一起向聚焦区域提供流入和流出。 可以使用可以发光，声音或光和声两者的脉冲源，其可能被侵蚀，并且可以在每个脉冲之后用导线进行替换的线引导。

公开(公告)号：US20070205724A1

公开(公告)日：2007-09-06

申请号：US11367770

申请日：2006-03-03

申请人： Raymond Schaefer ,  John Gallagher ,  Michael Grapperhaus

发明人： Raymond Schaefer ,  John Gallagher ,  Michael Grapperhaus

IPC分类号： H01J17/04

CPC分类号： H01J61/80 ,  H01J61/52

摘要： A high intensity surface discharge pulsed light source system includes a dielectric substrate, a first electrode near the dielectric substrate, a second electrode spaced from the first electrode and near the dielectric substrate, with containment for a discharge gas. The system is electrically powered and cooled from a single end. The discharge volume is sealed from the environment for long operational life, and the surface material chosen to allow for high intensity operation. Reflective coatings are employed to increase the light available for practical use. A pulsed electric discharge circuit provides practical operation for long and safe operation.

摘要翻译： 高强度表面放电脉冲光源系统包括电介质基板，介质基板附近的第一电极，与第一电极间隔开并且靠近电介质基板的第二电极，具有用于放电气体的容纳物。 该系统从一端电力供电并冷却。 排放体积与环境密封，使用寿命长，所选择的表面材料允许高强度操作。 采用反射涂层来增加可用于实际应用的光。 脉冲放电电路为实现长时间安全的操作提供实际操作。

公开(公告)号：US20050089077A1

公开(公告)日：2005-04-28

申请号：US10994312

申请日：2004-11-23

申请人： William Jones ,  Michael Grapperhaus ,  Andrej Mitrovic

发明人： William Jones ,  Michael Grapperhaus ,  Andrej Mitrovic

IPC分类号： G01K11/24 ,  G01K11/22

CPC分类号： G01K11/24

摘要： Ultrasonic transducers and tomographic techniques determine the temperature of a semiconductor substrate holder at all points on the substrate holder, thereby allowing comprehensive real-time control of the temperature of the substrate holder during a process, such as a semiconductor wafer etching process. An apparatus for measuring temperatures of respective portions of a substrate holder that supports a substrate (e.g., a semiconductor wafer) on which a process (e.g., an etching process) is carried out, and for controlling the temperatures of the respective portions in response to the measured temperatures, includes: an arrangement of at least one ultrasonic transducer arranged and configured to transmit ultrasonic energy through the substrate holder, and a data processor configured to calculate, during the process, the temperatures of the respective portions of the substrate holder based on respective propagation time delays of the ultrasonic energy through the respective portions.

摘要翻译： 超声波换能器和断层摄影技术确定了衬底保持器上所有点处的半导体衬底保持器的温度，从而允许在诸如半导体晶片蚀刻工艺的工艺期间对衬底保持器的温度进行全面的实时控制。 一种用于测量支撑在其上执行工艺（例如，蚀刻工艺）的衬底（例如，半导体晶片）的衬底保持器的各个部分的温度的装置，并且用于响应于 所测量的温度包括：至少一个超声波换能器的布置，布置和配置成通过衬底保持器传输超声波能量;以及数据处理器，被配置为在该过程期间基于衬底保持器的相应部分的温度，基于 相应部分的超声能量的相应传播时间延迟。