公开(公告)号：US20160315090A1

公开(公告)日：2016-10-27

申请号：US15200816

申请日：2016-07-01

Applicant: U.S. Army Research Laboratory

Inventor： GLEN R. Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

IPC: H01L27/115 ,  G11C23/00 ,  G11C11/22

CPC classification number: H01L27/11507 ,  G11C11/22 ,  G11C11/221 ,  G11C11/2273 ,  G11C11/50 ,  G11C23/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

Abstract translation: 一种制造包括基底的存储器件的方法; 包括铁电层和至少两个导电层的电容器，所述铁电层位于所述至少两个导电层之间; 所述至少两个导电层中的每一个可操作地连接到电流源; 在第一端附接到基座并在第二端处可移动的悬臂，铁电电容器被安装到悬臂上，使得悬臂的第二端在施加电流到铁电层时移动预定的位移，这引起了 铁电层，从而引起悬臂的位移，其与接触件可操作地相关联，使得当悬臂的预定位移时，触头能够进行电连接。 连接的存在或不存在形成存储器单元的两个状态。