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公开(公告)号：US09385306B2
公开(公告)日：2016-07-05
申请号：US14645711
申请日：2015-03-12
Applicant: U.S. Army Research Laboratory
Inventor： Glen R Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
CPC classification number: H01L27/11507 , G11C11/22 , G11C11/221 , G11C11/2273 , G11C11/50 , G11C23/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.
Abstract translation: 一种存储器件，包括一个基座; 包括铁电层和至少两个导电层的电容器，所述铁电层位于所述至少两个导电层之间; 所述至少两个导电层中的每一个可操作地连接到电流源; 在第一端附接到基座并在第二端处可移动的悬臂，铁电电容器被安装到悬臂上，使得悬臂的第二端在施加电流到铁电层时移动预定的位移，这引起了 铁电层，从而引起悬臂的位移，其与接触件可操作地相关联，使得当悬臂的预定位移时，触头能够进行电连接。 连接的存在或不存在形成存储器单元的两个状态。
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公开(公告)号：US20160025666A1
公开(公告)日：2016-01-28
申请号：US14337671
申请日：2014-07-22
Inventor： Simon J. Ghionea , David M. Hull , Gabriel L. Smith , Jeffrey S. Pulskamp , Sarah S. Bedair
IPC: G01N27/26
Abstract: According to embodiments, an electric field sensor having a sensor electrode is constructed of an electrically conductive material and having one or more outwardly protruding pillars. A screen electrode overlies the sensor electrode and has one or more openings which register with the one or more pillars on the sensor electrode. At least one piezoelectric actuator is connected to the screen electrode so that, when excited by a voltage signal, the piezoelectric actuator modulates the screen electrode toward and away from the sensor electrode at the frequency of the periodic voltage signal. An output circuit configured to detect a voltage, a current output, or both, between the sensor electrode and the screen electrode which is proportional in magnitude to the strength of the electric field.
Abstract translation: 根据实施例，具有传感器电极的电场传感器由导电材料构成并具有一个或多个向外突出的支柱。 屏幕电极覆盖在传感器电极上并且具有与传感器电极上的一个或多个柱对准的一个或多个开口。 至少一个压电致动器连接到屏幕电极，使得当由电压信号激发时，压电致动器以周期性电压信号的频率将屏幕电极调节到传感器电极和远离传感器电极。 输出电路，被配置为检测传感器电极和屏幕电极之间的电压，电流输出或两者，其大小与电场的强度成正比。
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公开(公告)号：US20160315090A1
公开(公告)日：2016-10-27
申请号：US15200816
申请日：2016-07-01
Applicant: U.S. Army Research Laboratory
Inventor： GLEN R. Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
IPC: H01L27/115 , G11C23/00 , G11C11/22
CPC classification number: H01L27/11507 , G11C11/22 , G11C11/221 , G11C11/2273 , G11C11/50 , G11C23/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.
Abstract translation: 一种制造包括基底的存储器件的方法; 包括铁电层和至少两个导电层的电容器，所述铁电层位于所述至少两个导电层之间; 所述至少两个导电层中的每一个可操作地连接到电流源; 在第一端附接到基座并在第二端处可移动的悬臂，铁电电容器被安装到悬臂上，使得悬臂的第二端在施加电流到铁电层时移动预定的位移，这引起了 铁电层，从而引起悬臂的位移，其与接触件可操作地相关联，使得当悬臂的预定位移时，触头能够进行电连接。 连接的存在或不存在形成存储器单元的两个状态。
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公开(公告)号：US10043565B2
公开(公告)日：2018-08-07
申请号：US15131881
申请日：2016-04-18
Inventor： Glen Richard Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.
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Patent Agency Ranking
公开(公告)号：US20150263268A1
公开(公告)日：2015-09-17
申请号：US14645711
申请日：2015-03-12
Applicant: U.S. Army Research Laboratory
Inventor： Glen R Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
CPC classification number: H01L27/11507 , G11C11/22 , G11C11/221 , G11C11/2273 , G11C11/50 , G11C23/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.
Abstract translation: 一种存储器件，包括一个基座; 包括铁电层和至少两个导电层的电容器，所述铁电层位于所述至少两个导电层之间; 所述至少两个导电层中的每一个可操作地连接到电流源; 在第一端附接到基座并在第二端处可移动的悬臂，铁电电容器被安装到悬臂上，使得悬臂的第二端在施加电流到铁电层时移动预定的位移，这引起了 铁电层，从而引起悬臂的位移，其与接触件可操作地相关联，使得当悬臂的预定位移时，触头能够进行电连接。 连接的存在或不存在形成存储器单元的两个状态。
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公开(公告)号：US09887205B2
公开(公告)日：2018-02-06
申请号：US15200816
申请日：2016-07-01
Applicant: U.S. Army Research Laboratory
Inventor： Glen R Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
IPC: H01L21/00 , H01L27/11507 , H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12 , G11C11/22 , G11C11/50 , G11C23/00
CPC classification number: H01L27/11507 , G11C11/22 , G11C11/221 , G11C11/2273 , G11C11/50 , G11C23/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.
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公开(公告)号：US09880120B2
公开(公告)日：2018-01-30
申请号：US14337671
申请日：2014-07-22
Inventor： Simon J. Ghionea , David M. Hull , Gabriel L. Smith , Jeffrey S. Pulskamp , Sarah S. Bedair
Abstract: According to embodiments, an electric field sensor having a sensor electrode is constructed of an electrically conductive material and having one or more outwardly protruding pillars. A screen electrode overlies the sensor electrode and has one or more openings which register with the one or more pillars on the sensor electrode. At least one piezoelectric actuator is connected to the screen electrode so that, when excited by a voltage signal, the piezoelectric actuator modulates the screen electrode toward and away from the sensor electrode at the frequency of the periodic voltage signal. An output circuit configured to detect a voltage, a current output, or both, between the sensor electrode and the screen electrode which is proportional in magnitude to the strength of the electric field.
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8.发明申请公开(公告)号：US20160276014A1
公开(公告)日：2016-09-22
申请号：US15131881
申请日：2016-04-18
Inventor： Glen Richard Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
CPC classification number: G11C11/221 , G11C11/22 , G11C11/50 , G11C23/00 , H01H2057/006 , H01L41/094
Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.
Abstract translation: 一种铁电机械存储器结构，包括衬底，可在第一位置和至少一个第二位置之间移动的MEMS开关元件，所述MEMS开关元件包括第一和第二电极，位于第一和第二电极之间的铁电材料层， 在第一和第二电极之间施加电压，MEMS开关元件在第一位置和第二位置之间移动，以及仅当MEMS开关元件处于第一位置时与第一电极接触的开关触点，其中选择铁电材料 使得铁电材料层内的剩余应变由第一和第二电极施加到铁电材料的电压电势的历史来控制，其中剩余应变足以将MEMS开关元件保持在第一或第二电极 去除电压时的位置。
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公开(公告)号：US08966993B2
公开(公告)日：2015-03-03
申请号：US13719588
申请日：2012-12-19
Applicant: U.S. Army Research Laboratory
Inventor： Jeffrey S. Pulskamp , Ronald G. Polcawich
Abstract: Method and apparatus for a piezoelectric apparatus are provided. In some embodiments, a method for fabricating a piezoelectric device may include etching a series of vertical trenches in a top substrate portion, depositing a first continuous conductive layer over the trenches and substrate, depositing a continuous piezoelectric layer over the first continuous conductive layer such that the piezoelectric material has trenches and sidewalls, depositing a second continuous conductive layer over the continuous piezoelectric layer, etching through the vertical trenches of the first continuous conductive layer, continuous piezoelectric layer, second continuous conductive layer, and top substrate portion into a bottom substrate portion, etching a series of horizontal trenches in the bottom substrate portion such that the horizontal trenches and vertical trenches occupy a continuous free space and allow movement of a piezoelectric MEMS device created by the above method in three dimensions.
Abstract translation: 提供了压电装置的方法和装置。 在一些实施例中，用于制造压电器件的方法可以包括蚀刻顶部衬底部分中的一系列垂直沟槽，在沟槽和衬底上沉积第一连续导电层，在第一连续导电层上沉积连续的压电层，使得 压电材料具有沟槽和侧壁，在连续压电层上沉积第二连续导电层，通过第一连续导电层，连续压电层，第二连续导电层和顶部衬底部分的垂直沟槽蚀刻成底部衬底部分 蚀刻底部衬底部分中的一系列水平沟槽，使得水平沟槽和垂直沟槽占据连续的自由空间，并允许通过上述方法在三维中产生的压电MEMS器件的移动。
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