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公开(公告)号：US20150311375A1
公开(公告)日：2015-10-29
申请号：US14285964
申请日：2014-05-23
IPC分类号： H01L31/107 , H01L31/18 , H01L31/0352 , H01L31/0296 , H01L31/0224 , H01L31/0336 , H01L31/0304
CPC分类号： H01L31/1075 , H01L31/022408 , H01L31/0296 , H01L31/03044 , H01L31/03046 , H01L31/0336 , H01L31/03529 , H01L31/18 , Y02E10/544 , Y02P70/521
摘要： A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.
摘要翻译： 一种制造方法和一种包括基底的光电探测器; p型或n型层; 每个具有偏振的第一和第二区域，其间的第一界面，所述第一和第二偏振的幅度和方向使得相对于投射到生长方向上的第一偏振的标量投影的生长方向上的第二偏振的标量投影 足以创建第一接口电荷; 以及适于在其上形成具有第三偏振的第一极化的第二极化的第二界面和第三区之间的第二界面的第三区域，所述第三极化在生长方向上具有标量投影，相对于标量 将第二偏振投影到生长方向上足以产生第二界面电荷; 所述第一和第二界面电荷为限定预定波长范围的载流子产生静电势垒。
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公开(公告)号：US09893227B2
公开(公告)日：2018-02-13
申请号：US15181074
申请日：2016-06-13
IPC分类号： H01L31/107 , H01L31/028 , H01L31/0304 , H01L31/0336
CPC分类号： H01L31/1075 , H01L31/03044 , H01L31/03046 , H01L31/0336 , Y02E10/544
摘要： A photodiode for detecting photons comprising a substrate; first semiconducting region suitable for forming a contact thereon; a first contact; a second semiconducting region comprising an absorption region for the photons and being formed of a semiconductor having one or more of a high surface recombination velocity or a high interface recombination velocity; a second contact operatively associated with the second region; the first semiconducting region and the second semiconducting region forming a first interface; the second semiconducting region being configured such that reverse biasing the photodiode between the first and second contacts results in the absorption region having a portion depleted of electrical carriers and an undepleted portion at the reverse bias point of operation; the undepleted portion being smaller than the absorption depth for photons; whereby the depletion results in the creation of an electric field and photogenerated carriers are collected by drift; and a method of making.
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3.发明申请VARIABLE RANGE PHOTODETECTOR WITH ENHANCED HIGH PHOTON ENERGY RESPONSE AND METHOD THEREOF 审中-公开具有增强的高光子能量响应的可变范围光电转换器及其方法公开(公告)号：US20160300973A1
公开(公告)日：2016-10-13
申请号：US15180397
申请日：2016-06-13
IPC分类号： H01L31/107 , H01L31/0304 , H01L31/0296 , H01L31/0352 , H01L31/0336 , H01L31/18
CPC分类号： H01L31/1075 , H01L31/0296 , H01L31/03044 , H01L31/0336 , H01L31/035272 , H01L31/03529 , H01L31/18
摘要： A photodiode comprising a substrate; first semiconducting region; first contact; second region comprising an absorption region for the photons having a predetermined energy range; the second region being formed of a semiconductor having a high surface or interface recombination velocity; a third semiconducting region transparent at the predetermined photon energy range suitable for making an operative connection to a second contact; the second and third regions forming a second interface; the first and second regions forming a first interface; the second region being configured such that biasing the photodiode results in depletion of the second region from the first interface to the second interface or at least one of the absorption depth and the sum of the absorption depth and diffusion length from the second interface; the depletion resulting in the creation of an electric field whereby photogenerated carriers are collected by drift and a method of making the foregoing.
摘要翻译： 包括基板的光电二极管; 第一半导体区; 第一次接触 第二区域包括具有预定能量范围的光子的吸收区域; 所述第二区域由具有高表面或界面复合速度的半导体形成; 在预定的光子能量范围内透明的第三半导体区域，其适于进行与第二接触件的操作连接; 所述第二和第三区域形成第二界面; 所述第一和第二区域形成第一界面; 所述第二区域被配置为使得偏置所述光电二极管导致所述第二区域从所述第一界面到所述第二界面的耗尽或所述吸收深度和所述第二界面的吸收深度和扩散长度的总和中的至少一个; 导致产生电场的耗尽，由此通过漂移收集光生载流子，以及制造上述方法。
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公开(公告)号：US20160284919A1
公开(公告)日：2016-09-29
申请号：US15181074
申请日：2016-06-13
IPC分类号： H01L31/107 , H01L31/0304 , H01L31/0336 , H01L31/028
CPC分类号： H01L31/1075 , H01L31/03044 , H01L31/03046 , H01L31/0336 , Y02E10/544
摘要： A photodiode for detecting photons comprising a substrate; first semiconducting region suitable for forming a contact thereon; a first contact; a second semiconducting region comprising an absorption region for the photons and being formed of a semiconductor having one or more of a high surface recombination velocity or a high interface recombination velocity; a second contact operatively associated with the second region; the first semiconducting region and the second semiconducting region forming a first interface; the second semiconducting region being configured such that reverse biasing the photodiode between the first and second contacts results in the absorption region having a portion depleted of electrical carriers and an undepleted portion at the reverse bias point of operation; the undepleted portion being smaller than the absorption depth for photons; whereby the depletion results in the creation of an electric field and photogenerated carriers are collected by drift; and a method of making.
摘要翻译： 一种用于检测包括基板的光子的光电二极管; 适于在其上形成接触的第一半导电区域; 第一次接触 第二半导电区域，包括用于光子的吸收区域，并且由具有高表面复合速度或高界面复合速度的一个或多个的半导体形成; 与所述第二区域可操作地相关联的第二接触件; 所述第一半导体区域和所述第二半导体区域形成第一界面; 所述第二半导体区域被配置为使得在所述第一和第二接触之间反向偏置所述光电二极管导致所述吸收区域具有在所述反向偏置操作点处的电载体和未剥离部分的部分; 未剥离部分小于光子的吸收深度; 由此耗尽导致电场的产生，并且通过漂移收集光生载流子; 和制作方法。
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