公开(公告)号：US20010009800A1

公开(公告)日：2001-07-26

申请号：US09725410

申请日：2000-11-29

Applicant: U.S. PHILIPS CORPORATION

Inventor： Erwin A. Hijzen ,  Cornelis E. Timmering ,  John R. Cutter

IPC: H01L021/3205 ,  H01L021/4763

CPC classification number: H01L29/66848 ,  H01L29/66348 ,  H01L29/66666

Abstract: In the manufacture of a trench-gate semiconductor device, for example a MOSFET or an IGBT, a starting semiconductor body (10) has two top layers (13, 15) provided for forming the source and body regions. Gate material (11null) is provided in a trench (20) with a trench etchant mask (51, FIG. 2) still present so that the gate material (11null) forms a protruding step (30) from the adjacent surface (10a) of the semiconductor body, and a side wall spacer (32) is then formed in the step (30) to replace the mask (51). The source region (13) is formed self-aligned with the protruding trench-gate structure with a lateral extent determined by the spacer (32, FIG. 5), and the gate (11) is then provided with an insulating overlayer (18, FIG. 6). Forming the sidewall spacer (32) when the protruding trench-gate structure has a well-defined edge provided by the gate material (11null) allows better definition of the source region (13) compared with a prior-art process in which the gate insulating overlayer is provided in the trench before causing the trench-gate structure to have the protruding step for the sidewall spacer.

Abstract translation: 在制造沟槽栅极半导体器件例如MOSFET或IGBT时，起始半导体本体（10）具有两个用于形成源极和体区的顶层（13,15）。 栅极材料（11'）设置在沟槽（20）中，其沟槽蚀刻剂掩模（图2中的51）仍然存在，使得栅极材料（11'）从邻近的表面（10a）形成突出的台阶（30） ），并且在步骤（30）中形成侧壁间隔物（32）以更换掩模（51）。 源极区域（13）与突出的沟槽栅极结构自对准形成，具有由间隔物（图5中的32）确定的横向范围，并且栅极（11）然后设置有绝缘覆盖层（18， 图6）。 当突出的沟槽栅极结构具有由栅极材料（11'）提供的良好限定的边缘时，形成侧壁间隔物（32）允许源区域（13）的更好的定义与现有技术的工艺相比，其中栅极 在使沟槽栅结构具有侧壁间隔物的突出步骤之前，在沟槽中设置绝缘覆层。