公开(公告)号：US20020084465A1

公开(公告)日：2002-07-04

申请号：US10055371

申请日：2002-01-23

Applicant: U.S. PHILIPS CORPORATION

Inventor： Peter W. Green ,  Martin J. Powell

IPC: H01L021/00

CPC classification number: H01L29/458 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765

Abstract: A method of forming a thin film transistor comprises providing first electrode layers (42) over a transparent substrate (40), the first electrode layers comprising a lower transparent layer (42a), and an upper opaque layer (42b). The first electrode layers are patterned to define a first electrode pattern in which an edge region of the transparent layer (42a) extends beyond an edge region of the opaque layer (42b). A transistor body region comprising a semiconductor layer (16) defining the channel area of the transistor and a gate insulator layer (18) is provided over the first electrode pattern (42). A transparent second electrode layer (46) is also provided. A negative resist (70) is exposed through the substrate (40), with regions of the negative resist layer (70) shadowed by the opaque layer (42b) of the first electrode pattern (42) remaining unexposed. These regions and the underlying second electrode layer (46) are removed to define a second electrode pattern which is substantially aligned with the opaque layer (42b) of the first electrode pattern (42). The method can be used for top or bottom gate TFTs and provides a self aligned gate structure with overlap between the source/drain and the gate, so that no additional processing of the semiconductor body is required.

Abstract translation: 形成薄膜晶体管的方法包括在透明衬底（40）上提供第一电极层（42），第一电极层包括下透明层（42a）和上不透明层（42b）。 图案化第一电极层以限定其中透明层（42a）的边缘区域延伸超过不透明层（42b）的边缘区域的第一电极图案。 包括限定晶体管的沟道区域的半导体层（16）和栅极绝缘体层（18）的晶体管体区域设置在第一电极图案（42）上。 还提供透明的第二电极层（46）。 负抗蚀剂（70）通过衬底（40）暴露，阴性抗蚀剂层（70）的区域被第一电极图案（42）的不透明层（42b）遮蔽，保持未曝光。 去除这些区域和下面的第二电极层（46）以限定与第一电极图案（42）的不透明层（42b）基本对齐的第二电极图案。 该方法可用于顶栅或底栅TFT，并提供在源极/漏极和栅极之间具有重叠的自对准栅极结构，使得不需要对半导体主体的附加处理。