公开(公告)号：US09337092B2

公开(公告)日：2016-05-10

申请号：US14347779

申请日：2012-09-20

Applicant: ULVAC, INC.

Inventor： Junichi Hamaguchi ,  Shuji Kodaira ,  Yuta Sakamoto ,  Akifumi Sano ,  Koukichi Kamada ,  Yoshiyuki Kadokura ,  Joji Hiroishi ,  Yukinobu Numata ,  Koji Suzuki

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  C23C14/02 ,  C23C14/04 ,  C23C14/16 ,  C23C14/14 ,  C23C14/34

CPC classification number: H01L21/76882 ,  C23C14/024 ,  C23C14/046 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  H01L21/2855 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract translation: 半导体器件的制造方法包括：在基体中形成槽部的槽部形成工序，形成至少覆盖槽部的内壁面的阻挡层的沐浴层形成工序，种子层形成工序 形成覆盖阻挡层的种子层，以及使用回流法使种子层熔融的晶种层熔融法。 种子层由Cu制成。

公开(公告)号：US20150221552A1

公开(公告)日：2015-08-06

申请号：US14347779

申请日：2012-09-20

Applicant: ULVAC, Inc.

Inventor： Junichi Hamaguchi ,  Shuji Kodaira ,  Yuta Sakamoto ,  Akifumi Sano ,  Koukichi Kamada ,  Yoshiyuki Kadokura ,  Joji Hiroishi ,  Yukinobu Numata ,  Koji Suzuki

IPC: H01L21/768 ,  C23C14/34 ,  C23C14/14 ,  H01L23/532 ,  C23C14/04

CPC classification number: H01L21/76882 ,  C23C14/024 ,  C23C14/046 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  H01L21/2855 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract translation: 半导体器件的制造方法包括：在基体中形成槽部的槽部形成工序，形成至少覆盖槽部的内壁面的阻挡层的沐浴层形成工序，种子层形成工序 形成覆盖阻挡层的种子层，以及使用回流法使种子层熔融的种子层熔融法。 种子层由Cu制成。