公开(公告)号：US20210230741A1

公开(公告)日：2021-07-29

申请号：US16966661

申请日：2019-12-11

Applicant: ULVAC, INC.

Inventor： Shuji Kodaira ,  Teppei Takahashi ,  Takahiro Tobiishi ,  Norifumi Yamamura ,  Hiroaki Katagiri ,  Junya Kubo ,  Masaaki Suzuki

IPC: C23C14/54 ,  H01L21/66 ,  C23C14/34

Abstract: A method of forming a film of this invention includes: rotating, inside a vacuum chamber, a to-be-processed substrate with a center of the to-be-processed substrate, while revolving the to-be-processed substrate on the same plane about a revolution shaft; and feeding a film-forming material from a film-forming source to form a predetermined thin film on a surface of the to-be-processed substrate. Provided that a goal film thickness of the thin film to be formed be defined as T, and that a film thickness of the thin film to be formed on the to-be-processed substrate in one revolution period be defined as D, the method further includes a setting process for setting a ratio α of rotation angular velocity Ωrot to a revolution angular velocity Ωrev of the to-be-processed substrate to a value satisfying the following formula (1) α≥6/log10(T/D)  (1)

公开(公告)号：US09337092B2

公开(公告)日：2016-05-10

申请号：US14347779

申请日：2012-09-20

Applicant: ULVAC, INC.

Inventor： Junichi Hamaguchi ,  Shuji Kodaira ,  Yuta Sakamoto ,  Akifumi Sano ,  Koukichi Kamada ,  Yoshiyuki Kadokura ,  Joji Hiroishi ,  Yukinobu Numata ,  Koji Suzuki

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  C23C14/02 ,  C23C14/04 ,  C23C14/16 ,  C23C14/14 ,  C23C14/34

CPC classification number: H01L21/76882 ,  C23C14/024 ,  C23C14/046 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  H01L21/2855 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract translation: 半导体器件的制造方法包括：在基体中形成槽部的槽部形成工序，形成至少覆盖槽部的内壁面的阻挡层的沐浴层形成工序，种子层形成工序 形成覆盖阻挡层的种子层，以及使用回流法使种子层熔融的晶种层熔融法。 种子层由Cu制成。

公开(公告)号：US08883632B2

公开(公告)日：2014-11-11

申请号：US13737875

申请日：2013-01-09

Applicant: ULVAC, Inc.

Inventor： Youhei Endo ,  Shuji Kodaira ,  Yuta Sakamoto ,  Junichi Hamaguchi ,  Yohei Uchida ,  Yasushi Higuchi ,  Shinya Nakamura ,  Kazuyoshi Hashimoto ,  Yoshihiro Ikeda ,  Hiroaki Iwasawa

IPC: H01L21/768

CPC classification number: H01L21/76882 ,  H01L21/76883

Abstract: A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process α between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process α, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10−4 [Pa·s].

Abstract translation: 一种器件的制造方法，包括：第一工序，其中在基板上形成阻挡膜，所述基板的一个表面上设有凹部以覆盖所述凹部的内壁面; 形成导电膜以覆盖阻挡膜的第二工序; 以及其中导电膜通过回流方法熔化的第三工艺，其中该方法包括第二工艺和第三工艺之间的工艺α，其中具有阻挡膜的衬底和其上的导电膜依次层压在其上 在压力A下暴露于气氛一段时间B，并且其中在过程α中，进行控制，使得压力A和时间段B的乘积不大于6×10-4 [Pa· s]。

公开(公告)号：US20150221552A1

公开(公告)日：2015-08-06

申请号：US14347779

申请日：2012-09-20

Applicant: ULVAC, Inc.

Inventor： Junichi Hamaguchi ,  Shuji Kodaira ,  Yuta Sakamoto ,  Akifumi Sano ,  Koukichi Kamada ,  Yoshiyuki Kadokura ,  Joji Hiroishi ,  Yukinobu Numata ,  Koji Suzuki

IPC: H01L21/768 ,  C23C14/34 ,  C23C14/14 ,  H01L23/532 ,  C23C14/04

CPC classification number: H01L21/76882 ,  C23C14/024 ,  C23C14/046 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  H01L21/2855 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract translation: 半导体器件的制造方法包括：在基体中形成槽部的槽部形成工序，形成至少覆盖槽部的内壁面的阻挡层的沐浴层形成工序，种子层形成工序 形成覆盖阻挡层的种子层，以及使用回流法使种子层熔融的种子层熔融法。 种子层由Cu制成。