公开(公告)号：US08883632B2

公开(公告)日：2014-11-11

申请号：US13737875

申请日：2013-01-09

Applicant: ULVAC, Inc.

Inventor： Youhei Endo ,  Shuji Kodaira ,  Yuta Sakamoto ,  Junichi Hamaguchi ,  Yohei Uchida ,  Yasushi Higuchi ,  Shinya Nakamura ,  Kazuyoshi Hashimoto ,  Yoshihiro Ikeda ,  Hiroaki Iwasawa

IPC: H01L21/768

CPC classification number: H01L21/76882 ,  H01L21/76883

Abstract: A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process α between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process α, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10−4 [Pa·s].

Abstract translation: 一种器件的制造方法，包括：第一工序，其中在基板上形成阻挡膜，所述基板的一个表面上设有凹部以覆盖所述凹部的内壁面; 形成导电膜以覆盖阻挡膜的第二工序; 以及其中导电膜通过回流方法熔化的第三工艺，其中该方法包括第二工艺和第三工艺之间的工艺α，其中具有阻挡膜的衬底和其上的导电膜依次层压在其上 在压力A下暴露于气氛一段时间B，并且其中在过程α中，进行控制，使得压力A和时间段B的乘积不大于6×10-4 [Pa· s]。