Target Assembly
    1.
    发明申请
    Target Assembly 审中-公开

    公开(公告)号:US20170268097A1

    公开(公告)日:2017-09-21

    申请号:US15527754

    申请日:2015-06-16

    Applicant: ULVAC, INC.

    CPC classification number: C23C14/3407 C23C14/081 H01J37/3491

    Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.

    Manufacturing method and manufacturing apparatus of device
    2.
    发明授权
    Manufacturing method and manufacturing apparatus of device 有权
    装置的制造方法和制造装置

    公开(公告)号:US08883632B2

    公开(公告)日:2014-11-11

    申请号:US13737875

    申请日:2013-01-09

    Applicant: ULVAC, Inc.

    CPC classification number: H01L21/76882 H01L21/76883

    Abstract: A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process α between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process α, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10−4 [Pa·s].

    Abstract translation: 一种器件的制造方法,包括:第一工序,其中在基板上形成阻挡膜,所述基板的一个表面上设有凹部以覆盖所述凹部的内壁面; 形成导电膜以覆盖阻挡膜的第二工序; 以及其中导电膜通过回流方法熔化的第三工艺,其中该方法包括第二工艺和第三工艺之间的工艺α,其中具有阻挡膜的衬底和其上的导电膜依次层压在其上 在压力A下暴露于气氛一段时间B,并且其中在过程α中,进行控制,使得压力A和时间段B的乘积不大于6×10-4 [Pa· s]。

    Deposition method and deposition apparatus

    公开(公告)号:US11972932B2

    公开(公告)日:2024-04-30

    申请号:US18546697

    申请日:2021-11-09

    Applicant: ULVAC, INC.

    CPC classification number: H01J37/32577 C23C14/3492 H01J37/32183

    Abstract: [Object] To improve step coverage of a coating film
    [Solving Means] A deposition apparatus that includes a first electrode, a second electrode, a first power supply source, a second power supply source, and a phase adjuster is used. The first power supply source includes a first high-frequency power source and a first matching circuit, the first high-frequency power source outputting first high-frequency power, the first matching circuit being connected between the first high-frequency power source and the first electrode. The second power supply source includes a second matching circuit that outputs second high-frequency power, the second high-frequency power having the same period as the first high-frequency power and being lower than the first high-frequency power. A second high-frequency power source is caused to output the second high-frequency power and the phase adjuster is caused to operate to provide a phase difference θ between a phase of the first high-frequency power and a phase of the second high-frequency power. A voltage value Vpp of the second high-frequency power and a capacitance value C1 of a first variable capacitor that correspond to the phase difference θ in a state where output impedance of the second high-frequency power source and load-side impedance connected to the second high-frequency power source match are detected. The voltage value Vpp and the capacitance value C1 are selected in combination in a predetermined range of the phase difference θ.

    Sputtering Method and Sputtering Apparatus

    公开(公告)号:US20210079514A1

    公开(公告)日:2021-03-18

    申请号:US16954441

    申请日:2018-12-04

    Applicant: ULVAC, INC.

    Abstract: [SUMMARY] A sputtering method includes disposing a carbon target (Tg) and a film-forming object (Wf) inside a vacuum chamber (1); evacuating the vacuum chamber to a predetermined pressure by a vacuum pump (Vp); subsequently introducing a sputtering gas into the vacuum chamber; charging the target with electric power to form a plasma atmosphere such that the target gets sputtered by the ions of the sputtering gas in the plasma, whereby carbon particles splashed from the target are caused to be adhered to, and deposited on, a surface of the film-forming object, thereby forming a carbon film. The target is cooled by heat exchanging with a first refrigerant at least during the time when the target receives radiant heat from the plasma; wherein the temperature of the first refrigerant is controlled to keep the temperature of the first refrigerant below 263K.

    Target assembly
    5.
    发明授权

    公开(公告)号:US10435783B2

    公开(公告)日:2019-10-08

    申请号:US15527754

    申请日:2015-06-16

    Applicant: ULVAC, INC.

    Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.

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