公开(公告)号：US20220416074A1

公开(公告)日：2022-12-29

申请号：US17675628

申请日：2022-02-18

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Min Woo Ryu ,  E San Jang ,  Ramesh Patel ,  Sang Hyo Ahn

IPC: H01L29/78 ,  H01Q1/22 ,  H01Q7/00 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66

Abstract: A field-effect transistor for terahertz wave detection using a gate as an antenna includes a silicon substrate including a source and a drain formed outside a channel region surrounding the source, and a gate formed to be spaced apart from the silicon substrate and correspond to the channel region, on a dielectric layer formed on a surface of the silicon substrate, in which the drain has a width determined based on a first performance parameter associated with a terahertz wave reception rate of the field-effect transistor and the channel region has a width determined based on a second performance parameter associated with detection of a terahertz wave to be received by the field-effect transistor.