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公开(公告)号：US20170207060A1
公开(公告)日：2017-07-20
申请号：US15001249
申请日：2016-01-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kuan-Chun Lin , Chih-Chieh Chou , Shih-Cheng Chen , Chung-Chih Hung , Yung-Teng Tsai , Chi-Hung Chan
CPC classification number: H01L22/34 , H01J37/244 , H01J2237/24495 , H01J2237/2817 , H01L22/12 , H01L22/14 , H01L22/30
Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.
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公开(公告)号：US09711326B1
公开(公告)日：2017-07-18
申请号：US15001249
申请日：2016-01-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kuan-Chun Lin , Chih-Chieh Chou , Shih-Cheng Chen , Chung-Chih Hung , Yung-Teng Tsai , Chi-Hung Chan
CPC classification number: H01L22/34 , H01J37/244 , H01J2237/24495 , H01J2237/2817 , H01L22/12 , H01L22/14 , H01L22/30
Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.
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