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公开(公告)号：US10510677B2
公开(公告)日：2019-12-17
申请号：US16108071
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/00 , H01L23/544
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US10082471B2
公开(公告)日：2018-09-25
申请号：US15396805
申请日：2017-01-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: B81B3/00 , G01N21/93 , H01L21/66 , H01L23/544 , G01N21/95
CPC classification number: H01L23/544 , H01L22/12 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20180356347A1
公开(公告)日：2018-12-13
申请号：US16108054
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/93 , H01L23/544 , H01L21/66 , G01N21/95
CPC classification number: G01N21/93 , G01N21/9501 , H01L22/32 , H01L23/544 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20180188185A1
公开(公告)日：2018-07-05
申请号：US15396805
申请日：2017-01-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/93 , H01L21/66 , H01L23/544 , G01N21/95
CPC classification number: G01N21/93 , G01N21/9501 , H01L22/32 , H01L23/544 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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Patent Agency Ranking
公开(公告)号：US10156526B1
公开(公告)日：2018-12-18
申请号：US16108054
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/00 , G01N21/93 , G01N21/95 , H01L23/544 , H01L21/66
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20180356348A1
公开(公告)日：2018-12-13
申请号：US16108071
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/93 , H01L23/544 , H01L21/66 , G01N21/95
CPC classification number: H01L23/544 , H01L22/12 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20170207060A1
公开(公告)日：2017-07-20
申请号：US15001249
申请日：2016-01-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kuan-Chun Lin , Chih-Chieh Chou , Shih-Cheng Chen , Chung-Chih Hung , Yung-Teng Tsai , Chi-Hung Chan
CPC classification number: H01L22/34 , H01J37/244 , H01J2237/24495 , H01J2237/2817 , H01L22/12 , H01L22/14 , H01L22/30
Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.
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公开(公告)号：US20240176335A1
公开(公告)日：2024-05-30
申请号：US18433511
申请日：2024-02-06
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Yu Yang , Kang-Ping Li , Chih-Kuan Chang , Chung-Chih Hung , Chen-Hui Huang , Nai-Ying Lo , Shih-Wei Huang
IPC: G05B19/418 , G05B23/02
CPC classification number: G05B19/41865 , G05B23/0281 , G05B2219/45031
Abstract: A fault detection method, includes the following steps. A target sequence is received, the target sequence includes several data. A first moving average operation is performed on the target sequence to establish a first moving average sequence. A second moving average operation is performed on the target sequence to establish a second moving average sequence. A difference operation between the first moving average sequence and the second moving average sequence is performed to obtain a difference sequence, the difference sequence includes several difference values. An upper limit value is set. When one of the difference values is greater than the upper limit value, the target sequence is determines as abnormal.
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公开(公告)号：US09711326B1
公开(公告)日：2017-07-18
申请号：US15001249
申请日：2016-01-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kuan-Chun Lin , Chih-Chieh Chou , Shih-Cheng Chen , Chung-Chih Hung , Yung-Teng Tsai , Chi-Hung Chan
CPC classification number: H01L22/34 , H01J37/244 , H01J2237/24495 , H01J2237/2817 , H01L22/12 , H01L22/14 , H01L22/30
Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.
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