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公开(公告)号：US10082471B2
公开(公告)日：2018-09-25
申请号：US15396805
申请日：2017-01-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: B81B3/00 , G01N21/93 , H01L21/66 , H01L23/544 , G01N21/95
CPC classification number: H01L23/544 , H01L22/12 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20180356347A1
公开(公告)日：2018-12-13
申请号：US16108054
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/93 , H01L23/544 , H01L21/66 , G01N21/95
CPC classification number: G01N21/93 , G01N21/9501 , H01L22/32 , H01L23/544 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20180188185A1
公开(公告)日：2018-07-05
申请号：US15396805
申请日：2017-01-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/93 , H01L21/66 , H01L23/544 , G01N21/95
CPC classification number: G01N21/93 , G01N21/9501 , H01L22/32 , H01L23/544 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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Patent Agency Ranking
公开(公告)号：US10510677B2
公开(公告)日：2019-12-17
申请号：US16108071
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/00 , H01L23/544
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US10156526B1
公开(公告)日：2018-12-18
申请号：US16108054
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/00 , G01N21/93 , G01N21/95 , H01L23/544 , H01L21/66
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20180356348A1
公开(公告)日：2018-12-13
申请号：US16108071
申请日：2018-08-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yung-Teng Tsai , Hung-Chin Lin , Chia-Chen Sun , Chih-Yu Wu , Jun-Ming Chen , Chung-Chih Hung , Sheng-Chieh Chen
IPC: G01N21/93 , H01L23/544 , H01L21/66 , G01N21/95
CPC classification number: H01L23/544 , H01L22/12 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
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公开(公告)号：US20170207060A1
公开(公告)日：2017-07-20
申请号：US15001249
申请日：2016-01-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kuan-Chun Lin , Chih-Chieh Chou , Shih-Cheng Chen , Chung-Chih Hung , Yung-Teng Tsai , Chi-Hung Chan
CPC classification number: H01L22/34 , H01J37/244 , H01J2237/24495 , H01J2237/2817 , H01L22/12 , H01L22/14 , H01L22/30
Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.
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公开(公告)号：US09711326B1
公开(公告)日：2017-07-18
申请号：US15001249
申请日：2016-01-20
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kuan-Chun Lin , Chih-Chieh Chou , Shih-Cheng Chen , Chung-Chih Hung , Yung-Teng Tsai , Chi-Hung Chan
CPC classification number: H01L22/34 , H01J37/244 , H01J2237/24495 , H01J2237/2817 , H01L22/12 , H01L22/14 , H01L22/30
Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.
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