LAYOUT CONFIGURATION FOR MEMORY CELL ARRAY
    1.
    发明申请
    LAYOUT CONFIGURATION FOR MEMORY CELL ARRAY 有权
    存储单元阵列布局配置

    公开(公告)号:US20140035111A1

    公开(公告)日:2014-02-06

    申请号:US14062914

    申请日:2013-10-25

    CPC classification number: H01L29/0692 H01L27/0207 H01L27/1104 H01L29/0684

    Abstract: A layout configuration for a memory cell array includes at least a comb-like doped region having a first conductivity type and a fishbone-shaped doped region having a second conductivity type. The second conductivity type and the first conductivity type are complementary. Furthermore, the comb-like doped region and the fishbone-shaped doped region are interdigitated.

    Abstract translation: 存储单元阵列的布局配置至少包括具有第一导电类型的梳状掺杂区域和具有第二导电类型的鱼骨形掺杂区域。 第二导电类型和第一导电类型是互补的。 此外,梳状掺杂区域和鱼骨形掺杂区域是交错的。

    Layout configuration for memory cell array
    2.
    发明授权
    Layout configuration for memory cell array 有权
    存储单元阵列的布局配置

    公开(公告)号:US09166003B2

    公开(公告)日:2015-10-20

    申请号:US14062914

    申请日:2013-10-25

    CPC classification number: H01L29/0692 H01L27/0207 H01L27/1104 H01L29/0684

    Abstract: A layout configuration for a memory cell array includes at least a comb-like doped region having a first conductivity type and a fishbone-shaped doped region having a second conductivity type. The second conductivity type and the first conductivity type are complementary. Furthermore, the comb-like doped region and the fishbone-shaped doped region are interdigitated.

    Abstract translation: 存储单元阵列的布局配置至少包括具有第一导电类型的梳状掺杂区域和具有第二导电类型的鱼骨形掺杂区域。 第二导电类型和第一导电类型是互补的。 此外,梳状掺杂区域和鱼骨形掺杂区域是交错的。

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