公开(公告)号：US20180143529A1

公开(公告)日：2018-05-24

申请号：US15361007

申请日：2016-11-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-I Wei ,  Chia-Wei Huang ,  Yung-Feng Cheng

IPC: G03F1/36 ,  G06F17/50

CPC classification number: G03F1/36 ,  G03F1/84 ,  G06F17/5081

Abstract: A method of forming a photomask is provided. A first layout pattern is first provided to a computer system and followed by generating an assist feature pattern by the computer system based on the first layout pattern and adding the assist feature pattern into the first layout pattern to form a second layout pattern. Thereafter, an optical proximity correction process is performed with reference to both the first layout pattern and the assist feature pattern to the second layout pattern without altering the assist feature pattern to form a third layout pattern by the computer system. Then, the third layout pattern is output to form a photomask.

公开(公告)号：US10139723B2

公开(公告)日：2018-11-27

申请号：US15361007

申请日：2016-11-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-I Wei ,  Chia-Wei Huang ,  Yung-Feng Cheng

IPC: G06F17/50 ,  G03F1/36 ,  G03F1/84

Abstract: A method of forming a photomask is provided. A first layout pattern is first provided to a computer system and followed by generating an assist feature pattern by the computer system based on the first layout pattern and adding the assist feature pattern into the first layout pattern to form a second layout pattern. Thereafter, an optical proximity correction process is performed with reference to both the first layout pattern and the assist feature pattern to the second layout pattern without altering the assist feature pattern to form a third layout pattern by the computer system. Then, the third layout pattern is output to form a photomask.